Results 241 to 250 of about 64,615 (313)

A unified symmetry framework for spin-ferroelectric coupling in altermagnetic multiferroics. [PDF]

Nat Commun
Sun W, Wang W, Yang C, Huang S, Cheng Z.
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Ultralow-Barrier Antiferroelectric-Ferroelectric Transition Enabled by Competing Polar Distortion in Two-Dimensional Ruddlesden-Popper Nitride Perovskites. [PDF]

Nano Lett
Lin S, Lei Q, Yin J.
europepmc   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Light-Induced Photomechanical Patterning of Ferroelectric Polarization. [PDF]

ACS Appl Mater Interfaces
Degezelle A, Strobelt J, Loebner S, Mebarki M, Fusil S, Garcia V, Bérini B, Polewczyk V, Dumont Y, Matzen S, Lecoeur P, Santer S, Maroutian T.   +12 more
europepmc   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Orientation-Confinement-Engineered Stabilization of Ferroelectricity in HfO₂ toward Maximum Polarization. [PDF]

Adv Sci (Weinh)
Sawyerr F, Sun Y, Zhang Z, Jia K, Lv S, Hu Q, Shi S, Huang Q, Zhang X, Fan X, Liu LM, Wen S, Wen Z, Cao T, Chen J.   +14 more
europepmc   +1 more source

Ferroelectrics

Journal of the Mineralogical Society of Japan, 1980
openaire   +2 more sources

Ferroelectric Behavior of Micro‐ to Submicron‐Scale HZO Capacitors: Impact of the Perimeter‐to‐Area Ratio

Advanced Electronic Materials, EarlyView.
Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina, Stefan Neatu, Lucian Pintilie, Lucia Nicoleta Leonat, Stavros Kitsios, Stefania Skorda, Alexandros El Sachat, Polychronis Tsipas, Alexander Flasby, Laura Bégon‐Lours, Athanasios Dimoulas   +10 more
wiley   +1 more source

A Perturbation Model of Gradient Energy Anisotropy for Phase-Field Simulation of Ferroelectrics. [PDF]

Materials (Basel)
Shi X, Liu J, Xu K, Wang H, Wang Z, Wang N, Huang H, Liu Z.   +7 more
europepmc   +1 more source