Results 221 to 230 of about 64,615 (313)

Grain Size-Dependent Defect and Domain Evolution in Lead Titanate-Based Relaxor Ferroelectrics. [PDF]

ACS Appl Mater Interfaces
Zhang H, Wang Y, Li Z, Oh S, Liu J, Yan H, Hao Y, Su L.   +7 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Emergence of unconventional ferroelectric phase in ultrathin Hf_0.5Zr_0.5O₂ films. [PDF]

Sci Adv
Lee S, Lee H, Lee HH, Lee HK, Kim JH, Park S, Lee HJ, Bae H, Jo S, Hasan M, Ha Y, Kuh BJ, Heo J, Choe DH, Lee E.   +14 more
europepmc   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

On the Interaction of the Photovoltaic Response With Ferroelectric and Magnetic Domains: Magnetoelectric Control of the Photovoltaic Response in BiFeO₃ Thin Films. [PDF]

Small Methods
Dias LC, Volnistem EA, Mazur M, Barbieri F, Endo KM, Ferreira AC, Diaz MNDS, Bonadio TGM, Miyahara RY, Tominaga TT, Dias GS, Cótica LF, Dos Santos IA, Eiras JA, Freitas VF.   +14 more
europepmc   +1 more source

Nonlinear Transverse Transport in a Ferromagnetic Polar Metal

Advanced Electronic Materials, EarlyView.
This work reports the observation of a nonlinear transverse response in ferromagnetic polar SrRuO3(111) thin films. The nonlinear signal exhibits a sharp enhancement across the magnetic phase transition. Through detailed scaling and theoretical analysis, the authors attribute this behavior to a sign reversal of the Berry curvature triple, establishing ...
Xuyang Sha, Xuejin Zhang, Hao Liu, Jin Cao, Ruohan Chen, Jinfeng Zhai, Dingfu Shao, Shiwei Wu, Zhen Wang, Cong Xiao, Shengyuan A. Yang, Pan He, Hangwen Guo, Jian Shen   +13 more
wiley   +1 more source

The Coupling of Ferroelectric Polarization and Oxygen Vacancy Migration Enables Electrically Controlled Thermal Memories. [PDF]

Adv Mater
Barneo D, Royo M, Ramos R, Carrete J, Romero-Bernad H, Jiménez R, Leborán V, Magén C, Varela-Domínguez N, Algueró M, Rurali R, Pardo JA, Rivadulla F, Langenberg E.   +13 more
europepmc   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Hybrid antiferroelectric-ferroelectric domain walls in noncollinear antipolar oxides. [PDF]

Nat Nanotechnol
Ushakov IN, Topstad M, Khalid MZ, Sharma N, Grams CP, Ludacka U, He J, Hunnestad KA, Sadeqi-Moqadam M, Glaum J, Selbach SM, Hemberger J, Becker P, Bohatý L, Kumar A, Íñiguez-González J, van Helvoort ATJ, Meier D.   +17 more
europepmc   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source