Results 201 to 210 of about 117,863 (296)

A Supramolecular Ferroelectric With Two Sublattices and Polarization Dependent Conductivity. [PDF]

Adv Sci (Weinh)
Mager H, Litterst M, Klubertz S, Haridas SV, Shyshov O, von Delius M, Kemerink M.   +6 more
europepmc   +1 more source

Ferroelectrics

Journal of the Mineralogical Society of Japan, 1980
openaire   +2 more sources

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Recent progress in HfO₂-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]

Nanoscale Adv
Kang HY, Shin YH, Kim DE, Kwon DW, Jeong JK.   +4 more
europepmc   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Resolving the On-Off Ratio Discrepancy in Bilayer 3R-MoS₂ FeSFETs: Dual Mechanisms of Domain Wall Engineering. [PDF]

Nano Lett
Teh YH, Jeng HT.
europepmc   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Highly tunable band structure in ferroelectric R-stacked bilayer WSe₂. [PDF]

Nat Commun
Li Z, Thor P, Kourmoulakis G, Ivanova TV, Taniguchi T, Watanabe K, Yu H, Brotons-Gisbert M, Gerardot BD.   +8 more
europepmc   +1 more source

Smart Exploration of Perovskite Photovoltaics: From AI Driven Discovery to Autonomous Laboratories

Advanced Energy Materials, EarlyView.
In this review, we summarize the fundamentals of AI in automated materials science, and review AI applications in perovskite solar cells. Then, we sum up recent progress in AI‐guided manufacturing optimization, and highlight AI‐driven high‐throughput and autonomous laboratories.
Wenning Chen, Zheyu Zhang, Kelvian T. Mularso, Bonghyun Jo, Hyun Suk Jung   +4 more
wiley   +1 more source

Reversible polarization-enabled hydrogen evolution reaction on two-dimensional ferroelectric Cu _<i>n</i> (CrSe₂) _<i>n</i>+1 monolayers. [PDF]

Chem Sci
Zhang W, Wang J, Wang Q, Si Y, Yang G.
europepmc   +1 more source