Advanced Electronic Materials, EarlyView.Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
Optical Switching of Robust Ferroelectric Polarization on Epitaxial Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Integrated with BaTiO<sub>3</sub>. [PDF]
Nanomicro LettDong W +8 more
europepmc +1 more source
Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics
Advanced Electronic Materials, EarlyView.Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley +1 more source
Enhanced Polarization in Ferroelectric Composites via DIW-Controlled Perovskite Nanosheet Orientation. [PDF]
Nanomaterials (Basel)Han Y, Zhu Z, Liu H.
europepmc +1 more source
Photoresponsive Rotaxanes Switch Lipid Bilayer Neuromorphic Behavior with Light
Advanced Electronic Materials, EarlyView.A rotaxane consisting of a macrocycle ring with two azobenzene units mechanically interlocked onto an amphiphilic axle was incorporated into droplet interface bilayers (DIBs). Photoswitching between the azobenzene configurations on the ring resulted in cycling between memristive and memcapacitive behaviors in lipid bilayers, enabling programmable ...
P.T. Podar +4 more
wiley +1 more source
Effect of Mn Addition on the Mechanical Properties and Ferroelectric Behavior of Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub> and 94(Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>)-6(BaTiO<sub>3</sub>) Ceramics. [PDF]
Materials (Basel)Gallegos-Melgar A +2 more
europepmc +1 more source
Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity
Advanced Electronic Materials, EarlyView.“Enhanced wafer‐scale device uniformity on 150 mm wafers is demonstrated using ferroelectric superlattice HfO2/ZrO2 (HZO) capacitors, as compared to conventional solid solution HZO capacitors. Superlattice HZO exhibits improved ferroelectric memory properties, including a broader polarization window, greater endurance, reduced leakage, and superior ...
Oscar Kaatranen +4 more
wiley +1 more source
Robust room-temperature ferroelectricity in the wide-bandgap semiconductor Ga<sub>2</sub>O<sub>3</sub>. [PDF]
Sci AdvShen J +14 more
europepmc +1 more source
Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration
Advanced Electronic Materials, EarlyView.Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song +10 more
wiley +1 more source
Tailoring high-field energy storage and dual-mode electrocaloric response in relaxor ferroelectric thin film. [PDF]
RSC AdvSingh C, Choudhary P, Asif M, Kumar A.
europepmc +1 more source