Results 181 to 190 of about 64,615 (313)

Local Polarization Unit Engineering Enables Ultrahigh Energy Density in NBT‐Based High‐Entropy Ceramic Capacitors

Advanced Science, EarlyView.
Herein, we demonstrate a breakthrough in dielectric energy storage by engineering local polarization units in high‐entropy multilayer ceramic capacitors (MLCCs). The optimized MLCCs achieve an ultrahigh recoverable energy density of 18.2 J cm−3 with 91% efficiency, coupled with exceptional thermal stability and fatigue resistance.
Shiyu Zhou, Yucheng Zhou, Linhai Li, A. Pelaiz‐Barranco, Xuefeng Chen, Genshui Wang, Yiwei Chen, Rongjiang Wang, Konstantin Nefedev, Tengfei Hu, Dawei Wang, Tongqing Yang   +11 more
wiley   +1 more source

Stress Engineering in the Optimization of Next-Generation Hafnium-Based Ferroelectric Memory. [PDF]

Nanomaterials (Basel)
Li Z, Yuan R, Guo X, Hu Y, Liu Y, Yu J, Xu K, Li Q, Wang T, Sun Q, Zhang DW, Chen L.   +11 more
europepmc   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Soft Ferroelectrics in One Dimension: Ferroelectric Columnar Liquid Crystals. [PDF]

Chempluschem
Park S, Cho BK.
europepmc   +1 more source

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

Advanced Science, EarlyView.
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave, Nicolas Bernier, Thomas Jalabert, Yoann Brûlé, Damien Térébénec, Pierre Meilleur, Hervé Roussel, Jean‐Baptiste Dory, Oussama J. Mouawad, Thibault Chommaux, Cristian Mocuta, Dominique Thiaudière, Laurent Vila, Françoise Hippert, Pierre Noé   +14 more
wiley   +1 more source

Impact of ferroelectric polarization dynamics on thermal reliability in Ferro-FinFETs. [PDF]

Discov Nano
Ma W, Peng Y, Wu Q, Zhang S, Sun L, Xiao W, Zhang C, Ma X, Hao Y.   +8 more
europepmc   +1 more source

Asymmetrically Fluorinated Phenyl 4‐biphenylcarboxylate Motifs as a Design Principle for Enantiotropic Ferroelectric Liquid Crystals

Advanced Science, EarlyView.
The effect of the structural arrangement of DIO and its analogs on ferroelectric phases is explored. Consequently, it is found that an asymmetrically fluorinated phenyl 4‐biphenylcaroboxylate skeleton is one of the favorable structural motifs for the emergence of enantiotropic ferroelectric liquid crystal phases.
Hiroyuki Matsukizono, Koichiro Hayashi, Keiko Kojima, Yasushi Okumura, Hirotsugu Kikuchi   +4 more
wiley   +1 more source

Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors. [PDF]

Small
Seok H, Kim G, Son S, Choi H, Kim T.
europepmc   +1 more source

Single‐Atom Intercalation‐Driven Topological Ferroelectric Metal for High‐Performance Hydrogen Evolution Reaction

Advanced Science, EarlyView.
Single‐atom Cu intercalation enables porous AB3 monolayers to integrate ferroelectricity, metallicity, topology, and hydrogen evolution catalysis in one platform. Switchable FE polarization modulates work function and hydrogen adsorption thermodynamics, providing an electrically controllable route to activate basal‐plane HER activity in topological ...
Rongxuan Lu, Jian Zhang, Jialin Gong, Wenxian Li, Gang Zhang   +4 more
wiley   +1 more source

Recent progress in single-phase molecular multiferroic materials with ferroelectricity and ferroelasticity. [PDF]

Chem Sci
Lun MM, Sun MM, Wang YQ, Gong GS, Wei MC, Su YL, Fu DW, Liu ZQ.   +7 more
europepmc   +1 more source