Results 161 to 170 of about 117,863 (296)

Zero Thermal Expansion and Local Structure in KxMnxFe2‐xMo3O12‐Based Materials

Advanced Science, EarlyView.
Local structure engineering via ion insertion drives local structural transformation from low‐symmetry P21/a to high‐symmetry R‐3c, enhancing structural flexibility and realizing a transition from positive thermal expansion to wide‐temperature‐range zero thermal expansion in KxMnxFe2‐xMo3O12‐based materials.
Gongsen He, Yongqiang Qiao, Shibo Zhao, Xin Chen, Xiangkai Hao, Kaiyue Zhao, Xinglai Yuan, Mengru Li, Wen Yin, Shintaro Kobayashi, Shogo Kawaguchi, Bingbing Fan, Rui Zhang, Qilong Gao   +13 more
wiley   +1 more source

Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]

ACS Nano
Das A, Senapati A, Kumar G, Lou ZF, Müller J, Maskeen JS, Chang YT, Tewari M, Agarwal A, Paul A, Raffel Y, Maikap S, Kao KH, Agarwal T, Lashkare S, Lu D, Larrieu G, Lee MH, De S.   +18 more
europepmc   +1 more source

Flexible Unusual Ternary‐Component Graded‐Modulus Dielectric Films with High‐Density Capacitive Energy Storage

Advanced Science, EarlyView.
Hierarchical PP–LSR107–BaTiO3 nanocomposite films are fabricated by one‐step extrusion and stretching for roll‐to‐roll manufacture, combining high energy storage and processing flexibility. LSR107 surrounds BaTiO3‐rich regions, locating amorphous PP, decreasing defects, and introducing deep traps that homogenize the electric field and suppress charge ...
Yi Gao, Xin‐Jie Wang, Lei Huang, Kun Xing, Baoquan Wan, Yan‐Hui Song, Jian‐Tao Wang, Li‐Juan Yin, Tong Liang, Yan Meng, Zunpeng Feng, Kai Huang, Ke Bi, Shao‐Long Zhong, Zhi‐Min Dang   +14 more
wiley   +1 more source

High-Performance Differential Imaging via Reconfigurable Black Phosphorus p-n Homojunction Optoelectronics. [PDF]

Nanomicro Lett
Hao R, Luo L, Yang L, Yang X, Gao F, Zhu M, Li Y, Feng Q, Zhang Z.   +8 more
europepmc   +1 more source

Memristive Physical Reservoir Computing

Advanced Science, EarlyView.
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao, Ziyuan Wang, Jingrui Wang, Li Zhang, Xianhua Wei, Lingxiang Hu, Zongxiao Li, Athanasios V. Vasilakos, Zhizhen Ye, Fei Zhuge   +9 more
wiley   +1 more source

Strongly coupled interface ferroelectricity and interface superconductivity in amorphous LaAlO₃/KTaO₃(111). [PDF]

Nat Commun
Dong MD, Cheng XB, Zhang M, Wu J.
europepmc   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, EarlyView.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

Triggered Ferroelectricity in HfO₂ From Hybrid Phonons and Higher-Order Dynamical Charges. [PDF]

Adv Mater
Jung S, Birol T.
europepmc   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

Advanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen, Yong‐Jyun Wang, Zi‐Qin Hong, Chien‐Hua Wang, Yi‐Ning Wang, Jia De Cheng, Chun‐Wei Huang, Ying‐Hao Chu, Wen‐Wei Wu   +8 more
wiley   +1 more source

Symmetry-Guided Functional Pathways of Intercalation-Free Rhombohedral (<i>R3</i>) Hafnia Derived from the Fluorite Phase for Low-Coercive Ferroelectric Memory. [PDF]

ACS Appl Mater Interfaces
Januar M, Liu CH, Aich A, Lee JY, Maikap S, Lee MH.   +5 more
europepmc   +1 more source