Results 161 to 170 of about 77,203 (284)

Van der Waals Heterostructures for Next-Generation Spintronics: Multiferroic-Mediated Magnetoelectric Properties. [PDF]

Adv Sci (Weinh)
Lee D, Yang J, Oh I, Lee S.
europepmc   +1 more source

Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets

Advanced Science, EarlyView.
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao, Fengxian Ma, Guoping Gao, Weizhen Meng, Ying Liu, Yandong Ma, Yalong Jiao   +6 more
wiley   +1 more source

Hydrogen Bond Driven Ferroelectricity in a Croconic Acid-Based Two-Component Organic Salt. [PDF]

Chem Asian J
Deka N, Indad MI, Zaręba JK, Boomishankar R.   +3 more
europepmc   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications. [PDF]

Small Methods
Zhang J, Dai Y, Zhou L, Lu Q, Dang K, Zhang Y, Zhang J, Hao Y.   +7 more
europepmc   +1 more source

Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration. [PDF]

Micromachines (Basel)
He C, Li W, Li J, Li Q, Xie Z, Du T.
europepmc   +1 more source

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source

Te/Fe₃GaTe₂ 1D-2D Ferroelectric Heterojunction Transistors Enabling Ultrafast Multi-State Switching for Workpiece Surface Defect Inspection. [PDF]

Nanomaterials (Basel)
Wang S, He Z, Wang T, Gao Z, Wang L, Zhang J, Jiang Y.   +6 more
europepmc   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Intrinsically Stretchable Piezoelectric Nanocomposites for Artificial Ultrasonic Sensory Synapse. [PDF]

Adv Mater
Do TD, Trung TQ, Bhuyan P, Nguyen MC, Nguyen QT, Jo N, Kim Y, Ha TDC, Kim MG, Park S, Yu WJ, Lee NE.   +11 more
europepmc   +1 more source