Results 141 to 150 of about 15,119 (267)

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Impact of ferroelectric polarization dynamics on thermal reliability in Ferro-FinFETs. [PDF]

Discov Nano
Ma W, Peng Y, Wu Q, Zhang S, Sun L, Xiao W, Zhang C, Ma X, Hao Y.   +8 more
europepmc   +1 more source

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source

Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors. [PDF]

Small
Seok H, Kim G, Son S, Choi H, Kim T.
europepmc   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Soft Ferroelectrics in One Dimension: Ferroelectric Columnar Liquid Crystals. [PDF]

Chempluschem
Park S, Cho BK.
europepmc   +1 more source

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

Advanced Science, EarlyView.
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave, Nicolas Bernier, Thomas Jalabert, Yoann Brûlé, Damien Térébénec, Pierre Meilleur, Hervé Roussel, Jean‐Baptiste Dory, Oussama J. Mouawad, Thibault Chommaux, Cristian Mocuta, Dominique Thiaudière, Laurent Vila, Françoise Hippert, Pierre Noé   +14 more
wiley   +1 more source

Printable Bifocal Microlenses from Ferroelectric Nematic Liquid Crystal Droplets. [PDF]

ACS Appl Mater Interfaces
Talwar M, Siddiquee Z, Jákli A.
europepmc   +1 more source

Asymmetrically Fluorinated Phenyl 4‐biphenylcarboxylate Motifs as a Design Principle for Enantiotropic Ferroelectric Liquid Crystals

Advanced Science, EarlyView.
The effect of the structural arrangement of DIO and its analogs on ferroelectric phases is explored. Consequently, it is found that an asymmetrically fluorinated phenyl 4‐biphenylcaroboxylate skeleton is one of the favorable structural motifs for the emergence of enantiotropic ferroelectric liquid crystal phases.
Hiroyuki Matsukizono, Koichiro Hayashi, Keiko Kojima, Yasushi Okumura, Hirotsugu Kikuchi   +4 more
wiley   +1 more source

Low-field strain-driven phase diagram of (Bi_1/2Na_1/2)TiO₃-SrTiO₃-LiNbO₃ lead-free relaxor ceramics for actuator applications. [PDF]

RSC Adv
Thien Khoi NH, Thang NH.
europepmc   +1 more source