Results 121 to 130 of about 77,203 (284)

Wake-Up and Fatigue under Electrical Cycling in HfO₂-Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices. [PDF]

Adv Sci (Weinh)
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Kim H, Lee S, Choi H, Park M, Cho H, Park MH, Kim Y.   +6 more
europepmc   +2 more sources

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS₂ Memory Transistor. [PDF]

Adv Sci (Weinh)
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Jeong Y, Wang H, Tordi P, Hu YC, Tamayo A, Wu B, Ahn HS, Sofer Z, Jung JH, Bonini M, Samorì P.   +10 more
europepmc   +2 more sources

Ferroelectric domain structures of PbTiO3 thin films with imprinted ferroelectric hysteresis loops

Scientific Reports
Understanding and controlling the domain structures and their stability in ferroelectric thin films is crucial for advancing technologies such as energy storage, memory devices, and sensors.
Eunmi Lee, Ahmed I. Ali, A. B. El Basaty, Jong Yeog Son   +3 more
doaj   +1 more source

Chemical synthesis and epitaxial growth methods for the preparation of ferroelectric ceramics and thin films

, 2018
Ferroelectric materials have constantly attracted scientific interest because of their technological applications. The efficiency of ferroelectrics materials is related to the way they are processed because characteristics such as chemical purity, phase ...
Zanetti, Snia M. [UNESP], Maria A. Zaghete, Lustosa, Glauco M.M.M. [UNESP], Teixeira, Guilhermina F. [UNESP], Glauco M.M.M. Lustosa, Zaghete, Maria A. [UNESP], Guilhermina F. Teixeira, Sônia M. Zanetti   +7 more
core   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

Advanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh, Alif Syafiq Kamarol Zaman, Muzhen Xu, Yuki Usami, Saptarshi Das, Hirofumi Tanaka   +5 more
wiley   +1 more source

Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices

Nature Communications
The structure and dynamics of ferroelectric domain walls are essential for polarization switching in ferroelectrics, which remains relatively unexplored in two-dimensional ferroelectric α-In2Se3.
Yuyang Wu, Tianjiao Zhang, Deping Guo, Bicheng Li, Ke Pei, Wenbin You, Yiqian Du, Wanchen Xing, Yuxiang Lai, Wei Ji, Yuda Zhao, Renchao Che   +11 more
doaj   +1 more source

Controlled Growth of Boron Nitride in Various Phases

Advanced Materials Interfaces, EarlyView.
Phase‐selective boron nitride growth is presented as a unified materials‐design problem across hexagonal, rhombohedral, cubic, and amorphous phases. By linking synthesis routes to thermodynamic stability, kinetic accessibility, surface diffusion, interfacial templating, and energetic activation, this review clarifies how bonding and stacking are ...
Pan Wu, Kanghao Xie, Jiajie Qi, Xiaorui Zheng, Kaihui Liu, Xuedong Bai, Li Wang   +6 more
wiley   +1 more source

Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration

Nature Communications
Ferroelectric semiconductors have the advantages of switchable polarization ferroelectric field regulation and semiconductor transport characteristics, which are highly promising in ferroelectric transistors and nonvolatile memory.
Yu Liu, Shuzhang Yang, Lina Hua, Xiaomin Yang, Enlong Li, Jincheng Wen, Yanqiu Wu, Liping Zhu, Yingguo Yang, Yan Zhao, Zhenghua An, Junhao Chu, Wenwu Li   +12 more
doaj   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source