Results 151 to 160 of about 117,863 (296)
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Ferroelectric nanodot reservoir for neuromorphic computing. [PDF]
Razumnaya A +5 more
europepmc +1 more source
Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo +12 more
wiley +1 more source
A unified symmetry framework for spin-ferroelectric coupling in altermagnetic multiferroics. [PDF]
Sun W, Wang W, Yang C, Huang S, Cheng Z.
europepmc +1 more source
The first TrFE‐free ferroelectric polymers exhibiting concurrently a morphotropic phase boundary and high Curie temperature are reported through a grafting strategy, which is completely different from previous methods to design MPB by composition and irradiation. This finding offers a cost‐effective solution to decode the long‐standing inverse relation
Zekai Fei +6 more
wiley +1 more source
A Perturbation Model of Gradient Energy Anisotropy for Phase-Field Simulation of Ferroelectrics. [PDF]
Shi X +7 more
europepmc +1 more source
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga +3 more
wiley +1 more source
Giant Switchable Remanent Polarization and Photocurrent in Ferroelectric Thin Film Photomemristor for In Situ Training. [PDF]
Zhao Z +21 more
europepmc +1 more source
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang +7 more
wiley +1 more source
Polarization-driven twisted states in ferroelectric nematic liquid crystals under confinement. [PDF]
Savchenko A +5 more
europepmc +1 more source

