Results 151 to 160 of about 64,615 (313)

Polarization‐Enabled Piezoelectric Tellurium–Selenium (TexSe1–x) Thin Films for Memory Switching and Artificial Synaptic Functions

open access: yesAdvanced Science, EarlyView.
Here, we demonstrate and investigate polarization‐enabled electromechanical responses in cryogenic physical vapor deposition (cryogenic PVD)‐deposited TexSe1‐x thin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry.
Chia‐Chen Chung   +16 more
wiley   +1 more source

An Electrode Design Strategy to Minimize Ferroelectric Imprint Effect

open access: yesAdvanced Science
The phenomenon of ferroelectric imprint, characterized by an asymmetric polarization switching behavior, poses significant challenges in the reliability and performance of ultra‐low‐voltage ferroelectric devices, including MagnetoElectric Spin‐Orbit ...
Yu‐Wei Chen   +11 more
doaj   +1 more source

Magnetoelectric Nanoparticle‐Based Wireless Brain–Computer Interface: Underlying Physics and Projected Technology Pathway

open access: yesAdvanced Science, EarlyView.
Magnetoelectric nanoparticles (MENPs) enable fully wireless, minutely invasive neuromodulation, and potentially neural recording, by converting magnetic into electric and, conversely, electric into magnetic fields, respectively, at high spatiotemporal resolution.
Elric Zhang   +14 more
wiley   +1 more source

Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications

open access: yesAdvanced Science, EarlyView.
This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley   +1 more source

Effects of plasma gas interface processing on ferroelectric property of TiN/Hf0.5Zr0.5O2/TiN ferroelectric device

open access: yesHigh Temperature Materials and Processes
HZO ferroelectric capacitor device have sparked considerable interest among researchers due to their high-speed storage capability and low-power consumption characteristics.
Wang Zhenhua   +12 more
doaj   +1 more source

Engineering of Crystal and Domain Structures in Epitaxial Y:HfO2 Thin Films by YSZ Substrate Miscut

open access: yesAdvanced Science, EarlyView.
We investigate how YSZ substrate miscut influences crystal structure and domain formation in epitaxial Y‐doped HfO2 thin films. Using magnetron sputtering, high‐resolution X‐ray diffraction, atomic‐resolution scanning transmission electron microscopy, and first‐principles calculations, we systematically examine the characteristics of thickness‐ and ...
Jun Young Lee   +12 more
wiley   +1 more source

Interaction between quantum paraelectricity and ferroelasticity in SrTiO3

open access: yes
The dielectric susceptibility of SrTiO3 is measured as a function of temperature between room temperature and 32 K. These data show an anomaly at approximately 105 K, which is associated with the cubic-tetragonal ferroelastic phase transition.
Morrison, F. D.   +2 more
core   +1 more source

Diverse Landscape of Tunable Magnetic, Topological, and Ferroelectric States in 2D Ti3Se3Te2

open access: yesAdvanced Science, EarlyView.
Ti3Se3Te2 emerges as a multifunctional 2D van der Waals platform. The monolayer is a dynamically stable ferromagnetic quantum anomalous Hall insulator. In bilayers, two stacking configurations yield distinct phases: AA‐stacking hosts an altermagnetic quantum spin Hall insulator, while AA′‐stacking exhibits three‐state in‐plane ferroelectricity ...
Jiangtao Yu   +5 more
wiley   +1 more source

Preparação e propriedades de cristais e de cerâmicos e perovesquites ferroeléctricas com camadas de bismuto

open access: yes, 2005
Doutoramento em Ciência e Engenharia de MateriaisImpulsionado pelo interesse em conhecer as propriedades intrínsecas dos compostos SrBi2Ta2O9 (SBT) e SrBi2Nb2O9 (SBN) que se apresentam como os materiais mais promissores para substituir o titanato de ...
Amorín González, Harvey
core  

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