Results 191 to 200 of about 117,863 (296)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Giant Tunneling Electroresistance and Anisotropic Photoresponse in Sliding Ferroelectric Homojunctions Based on Bilayer Janus MoSSe. [PDF]

Nanomaterials (Basel)
Yang H, Xu Y.
europepmc   +1 more source

MXenes: Bridging the Gap Between Advanced Materials and Sustainable Technologies in Energy and Environmental Applications

Advanced Electronic Materials, EarlyView.
MXenes, a family of two‐dimensional transition metal carbides and nitrides, exhibit exceptional physical and chemical properties tunable through surface functionalization. This review summarizes recent advances in MXene synthesis, property modulation, and composite fabrication.
Fatemeh Saeedi, Erfan Zare, Reza Ansari, Mojtaba Haghgoo, Saeid Sahmani   +4 more
wiley   +1 more source

Approaching theoretical polarization limit in HfZrO2/HfLaO2 multilayers. [PDF]

Nat Commun
Shi S, Xi H, Su H, Sawyerr F, Liu Z, Zhang Z, Huangfu G, Niu J, Sun Y, Yang P, Gong X, Chen W, Tsymbal EY, Yan X, Tian H, Cao T, Chen J.   +16 more
europepmc   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

Facet-modulated ferroelectric polymers. [PDF]

Nat Commun
Cai B, Hou ZL, Qi YY, Zhao PY, Peng HL, Zhang Y, Koo MC, Yue T, Hu P, Liu LM, Wang GS.   +10 more
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V. [PDF]

Sci Adv
Meng D, Ma X, Shen Z, Xu L, Peng LM, Qiu C.   +5 more
europepmc   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source