Results 21 to 30 of about 115,553 (174)

Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage

open access: yesInfoMat, 2022
Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory owing to its outstanding performance such as low power consumption, fast speed, and high endurance. However, the ferroelectricity of conventional ferroelectric materials
Yu‐Ting Huang   +6 more
doaj   +1 more source

Effect on Local Structure and Phase Transition of Perovskite-Type [N(CH3)4]2Zn1-x Cu x Br4 (x = 0, 0.5, 0.7, and 1) Crystals with the Various Doping of Cu2+ Ions

open access: yesScientific Reports, 2018
This study focused on how the local structures in pure [N(CH3)4]2ZnBr4 crystal are affected by the partial replacement of Zn2+ ions with Cu2+ ions. The structures and phase transition temperatures TC of perovskite-type [N(CH3)4]2Zn1-x Cu x Br4 (x = 0, 0 ...
Ae Ran Lim
doaj   +1 more source

Effect of magnetic field and temperature on the ferroelectric loop in MnWO4

open access: yes, 2008
The ferroelectric properties of MnWO4 single crystal have been investigated. Despite a relatively low remanent polarization, we show that the sample is ferroelectric.
B. Jaffe   +4 more
core   +3 more sources

Graphene field effect transistors with ferroelectric gating

open access: yes, 2010
Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective way to control ...
Ni, Guang-Xin   +5 more
core   +1 more source

Structural properties of two inequivalent Cs(1) and Cs(2) sites in perovskite tricaesium pentahalogencobaltate, Cs3CoX5 (X = Cl, Br)

open access: yesAIP Advances, 2017
The local structures of Cs3CoX5 (X = Cl, Br) were examined using nuclear magnetic resonance (NMR) and magic angle spinning (MAS) NMR experiments. The two inequivalent Cs(1) and Cs(2) sites in two compounds were clearly distinguished based on static NMR ...
Ae Ran Lim, Sung Soo Park, Jin-Hae Chang
doaj   +1 more source

Ultracold heteronuclear molecules and ferroelectric superfluids

open access: yes, 2006
We analyze the possibility of a ferroelectric transition in heteronuclear molecules consisting of Bose-Bose, Bose-Fermi or Fermi-Fermi atom pairs. This transition is characterized by the appearance of a spontaneous electric polarization below a critical ...
C. A. R. Sá de Melo   +5 more
core   +1 more source

Functionalization of Graphene and Dielectric Property Relationships in PVDF/graphene Nanosheets Composites

open access: yesInternational Journal of Electrochemical Science, 2018
In this paper, a series of the functionalized graphenes, such as graphene oxide (GO), reduced graphene oxide (rGO), carboxylated graphene oxide (GOCOOH), reduce carboxylated graphene oxide (rGOCOOH), fluorinated graphene oxide (GOF), and reduce ...
Xuewen Zheng   +6 more
doaj   +1 more source

Nanoscale ferroelectric manipulation of magnetic flux quanta

open access: yes, 2011
Using heterostructures that combine a large-polarization ferroelectric (BiFeO3) and a high-temperature superconductor (YBa2Cu3O7-{\delta}), we demonstrate the modulation of the superconducting condensate at the nanoscale via ferroelectric field effects ...
Barthélémy, Agnès   +9 more
core   +1 more source

Hollow Microspherical Li[Li0.24Ni0.38Mn0.38]O2 as Cathode Material for Lithium-Ion Batteries with Excellent Electrochemical Performance

open access: yesInternational Journal of Electrochemical Science, 2018
Li-rich hollow microspherical Li[Li0.24Ni0.38Mn0.38]O2 sample was successfully synthesized by a coprecipitation approach followed by high-temperature calcinations.
Shumei Dou, Ping Li, Huiqin Li
doaj   +1 more source

Interface Engineering and Device Applications of 2D Ultrathin Film/Ferroelectric Copolymer P(VDF‐TrFE)

open access: yesAdvanced Physics Research, 2023
Ferroelectric materials with switchable electrical polarization have been widely used in tunnel junctions, non‐volatile memories, and field‐effect transistors.
Zhaoying Dang   +4 more
doaj   +1 more source

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