Results 41 to 50 of about 117,863 (296)
Ferroelectric materials with switchable electrical polarization have been widely used in tunnel junctions, non‐volatile memories, and field‐effect transistors.
Zhaoying Dang +4 more
doaj +1 more source
Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices
To optimize the performance of multifunctional carbon nanotube-ferroelectric devices, it is necessary to understand both the polarization and charge dynamics effects on their transconductance.
Blaser, Cédric +2 more
core +2 more sources
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
wiley +1 more source
The development of dielectric ceramics for energy storage applications requires suppression of interfacial polarization (IFPs) and elevation of grain resistance to obtain high energy storage density and foster breakdown strength.
Amira A Kamal +3 more
doaj +1 more source
Preparation, Thermal, and Physical Properties of Perovskite-Type (C3H7NH3)2CdCl4 Crystals
To investigate the thermal and physical properties of perovskite-type (C3H7NH3)2CdCl4, its temperature-dependent chemical shifts and spin⁻lattice relaxation times are measured using thermogravimetric analysis (TGA), differential scanning ...
Ae Ran Lim, Sun Ha Kim
doaj +1 more source
In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thicknesses ...
Wei-Dong Liu +4 more
doaj +1 more source
The polarization and the susceptibility of a ferroelectric multilayer with a non-ferroelectric slab are investigated within the framework of transverse Ising model with a four-spin interaction term. The effect of the thickness and the position of the non-
Christen +28 more
core +1 more source
Ferroelectric Phase Transitions in Ultra-thin Films of BaTiO3 [PDF]
We present molecular dynamics simulations of a realistic model of an ultrathin film of BaTiO$_3$ sandwiched between short-circuited electrodes to determine and understand effects of film thickness, epitaxial strain and the nature of electrodes on its ...
Jaita Paul +5 more
core +2 more sources
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
Aging effect evolution during ferroelectric-ferroelectric phase transition: A mechanism study
Aging can significantly modify the dielectric, piezoelectric, and ferroelectric performance of ferroelectrics. However, little attention has been paid to the aging effect during ferroelectric-ferroelectric phase transitions that is essentially correlated
Zuyong Feng +3 more
doaj +1 more source

