Results 51 to 60 of about 64,615 (313)

Reconfigurable Logic‐in‐Memory Operations Enabled by Triple‐Gated Feedback Field‐Effect Transistors for Area‐Efficient Computing

Advanced Engineering Materials, EarlyView.
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol, Yunwoo Shin, Donghyung Lee, Dongki Kim, Kyoungah Cho, Sangsig Kim   +5 more
wiley   +1 more source

Preparation, Thermal, and Physical Properties of Perovskite-Type (C₃H₇NH₃)₂CdCl₄ Crystals

Crystals, 2019
To investigate the thermal and physical properties of perovskite-type (C3H7NH3)2CdCl4, its temperature-dependent chemical shifts and spin⁻lattice relaxation times are measured using thermogravimetric analysis (TGA), differential scanning ...
Ae Ran Lim, Sun Ha Kim
doaj   +1 more source

Deterministic control of ferroelectric polarization by ultrafast laser pulses

Nature Communications, 2022
Controlling the electric polarization in ferroelectric materials at room temperature is an important aspect in the design of novel ferroelectric-based devices.
Peng Chen, Charles Paillard, Hong Jian Zhao, Jorge Íñiguez, Laurent Bellaiche   +4 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Suppression of interfacial polarization via enhancement of entropy, grain resistance and optical band-gap strategies in perovskite ceramics

Scientific Reports
The development of dielectric ceramics for energy storage applications requires suppression of interfacial polarization (IFPs) and elevation of grain resistance to obtain high energy storage density and foster breakdown strength.
Amira A Kamal, Asmaa Al-Rasheedi, K. A. Aly, Abd El-razek Mahmoud   +3 more
doaj   +1 more source

Study on Paramagnetic Interactions of (CH₃NH₃)₂CoBr₄ Hybrid Perovskites Based on Nuclear Magnetic Resonance (NMR) Relaxation Time

Molecules, 2019
The thermal properties of organic−inorganic (CH3NH3)2CoBr4 crystals were investigated using differential scanning calorimetry and thermogravimetric analysis. The phase transition and partial decomposition temperatures were observed at 460 K and 572
Ae Ran Lim, Sun Ha Kim
doaj   +1 more source

Impact of Series-Connected Ferroelectric Capacitor in HfO₂-Based Ferroelectric Field-Effect Transistors for Memory Application

IEEE Journal of the Electron Devices Society, 2020
In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thicknesses ...
Wei-Dong Liu, Zi-You Huang, Jun Ma, Zhi-Wei Zheng, Chun-Hu Cheng   +4 more
doaj   +1 more source

Fluid Ferroelectric Filaments

Advanced Science, 2023
AbstractFreestanding slender fluid filaments of room‐temperature ferroelectric nematic liquid crystals are described. They are stabilized either by internal electric fields of bound charges formed due to polarization splay or by external voltage applied between suspending wires.
Máthé, Marcell, Perera, Kelum, Buka, Ágnes, Salamon, Peter, Jakli, Antal   +4 more
openaire   +6 more sources

Ferroelectric-Gated All 2D Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing

, 2023
With the continuous scaling down of the modern integrated circuits, conventional metal-oxide-semiconductor field effect transistors are becoming inefficient due to various nonideal effects such as enhanced short-channel effects.
Zhongyang Liu, Zhongyang Liu (1863094), Mingjie Li (754176), Mingjie Li, Yingtao Ding (13144818), Xiao Liu, Zhiming Chen, Xiao Liu (65413), Zhifang Liu, Zhifang Liu (439137), Yilin Sun, Yingtao Ding, Yilin Sun (793391), Zhiming Chen (1313025)   +13 more
core   +1 more source

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

Advanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa, Lin‐Ding Yuan, Stephen D. Wilson, James M. Rondinelli   +3 more
wiley   +1 more source