Results 61 to 70 of about 15,119 (267)

Performance Enhancement of Tin Chloride‐Incorporated Ferroelectric Polymer‐Based Artificial Synapse for Hardware Neural Networks

Advanced Functional Materials, EarlyView.
This paper proposes a highly efficient ferroelectric artificial synapse device based on an oxide semiconductor and SnCl2‐inserted P(VDF‐TrFE) gate dielectric layer. This FeFET significantly improved the synaptic performance due to the ion‐dipole interaction.
Hyun‐Soo Kim, Hyunkyu Lee, Yeonho Choi, Won Young Jang, Hyungmin Kim, Krishna Moorthy Ponnusamy, Hongseung Lee, Jaewook Yoo, Ji Ye Lee, S. Chandramohan, Seongin Hong, Hagyoul Bae, Hyeon‐Sik Jang, Sang Yeol Lee, Keun Heo   +14 more
wiley   +1 more source

Giant Electrostriction in Halide Perovskites Revisited With Double‐Modulation Interferometry

Advanced Functional Materials, EarlyView.
A giant electrostrictive effect in lead halide perovskites had been reported previously. This work uses sensitive interferometry to measure the electromechanical response of various halide perovskite samples. The results reveal no intrinsic electrostrictive compression. Instead, the materials expand primarily under an applied electric field as a result
Philipp Ramming, Markus Griesbach, Ralf Moos, Lothar Kador, Anna Köhler   +4 more
wiley   +1 more source

Polarization‐Dependent Synaptic‐Like Electro‐Optical Response in Ferroelectric Nematic Liquid Crystals

Advanced Functional Materials, EarlyView.
Ferroelectric nematic liquid crystals (FNLCs) offer fast, tunable polarization and low‐voltage operation but suffer from poor polarization retention at zero field. Semiconductor‐modified FNLCs enhance polarization retention and exhibit short‐ and long‐term electro‐optical responses, while also supporting spike‐type signal integrations.
Kutay Sagdic, Weiming Yao, Danqing Liu
wiley   +1 more source

A Thermodynamic Model of Antiferroelectics and Its Application to Electric Field Induced Antiferroelectric‐Ferroelectric Transition in PbZrO3

Advanced Functional Materials, EarlyView.
A thermodynamic model that incorporates ferroelectric, antiferroelectric, and antiferrodistortive orders of PbZrO3${\rm PbZrO}_3$ is established and parameterized based on experimental measurements and first‐principles calculations. We derive a Clapeyron‐like equation for describing the temperature‐dependence of critical electric fields for the ...
Zhiyang Wang, Guodong Zhao, Aiden Ross, Long‐Qing Chen   +3 more
wiley   +1 more source

Passive Voltage Amplification in FE-FE-DE Heterostructure

IEEE Access
In this article, we have studied passive voltage amplification in FE-FE-DE heterostructure. We have stacked two different ferroelectric oxides; one is second-order transition ferroelectric material (continuous transition ferroelectric material) and the ...
Bhaskar Awadhiya, Sameer Yadav, Yashwanth Nanjappa, Abhishek Pahuja, Shivendra Yadav, Sachin Agrawal   +5 more
doaj   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications

AIP Advances, 2020
Recently, hafnium oxide (HfO2)-based ferroelectric materials have achieved phenomenal success in next-generation nonvolatile memory applications.
Ming-Yang Cha, Hao Liu, Tian-Yu Wang, Lin Chen, Hao Zhu, Li Ji, Qing-Qing Sun, David Wei Zhang   +7 more
doaj   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Large Photoinduced Tuning of Ferroelectricity in Sliding Ferroelectrics

Physical Review Letters
Stacking nonpolar, monolayer materials has emerged as an effective strategy to harvest ferroelectricity in two-dimensional (2D) van de Waals (vdW) materials. At a particular stacking sequence, interlayer charge transfer allows for the generation of out-of-plane dipole components, and the polarization magnitude and direction can be altered by an ...
Lingyuan Gao, Laurent Bellaiche
openaire   +3 more sources

Ferroelectricity in Spiral Magnets [PDF]

Physical Review Letters, 2006
4 pages, 4 ...
openaire   +3 more sources