Results 71 to 80 of about 117,863 (296)

Investigation of Halogen Substitution Effects in π‐Conjugated Organic Ligands of Chiral Hybrid Perovskites on Their Chiroptical Activity

Advanced Functional Materials, EarlyView.
The role of novel thiophene‐based ligands with halogen substitutions in enhancing the chiroptical and optoelectronic properties of 2D chiral HOIPs has been investigated. By tailoring ligand design, enhanced CD and CPL properties are achieved, with improved CPL discrimination in photodetectors.
Boesung Kwon, Doyeong Yeo, In‐Chul Hwang, In Hwan Jung, Joon Hak Oh   +4 more
wiley   +1 more source

Excellent Energy Storage and Photovoltaic Performances in Bi_0.45Na_0.45Ba_0.1TiO₃-Based Lead-Free Ferroelectricity Thin Film

Ceramics
Inorganic dielectric films have attracted extensive attention in the field of microelectronic and electrical devices because of their wide operating temperature range, small size, and easy integration. Here, we designed and prepared eco-friendly (1-x)Bi0.
Jianhua Wu, Tiantian Zhang, Xing Gao, Lei Ning, Yanhua Hu, Xiaojie Lou, Yunying Liu, Ningning Sun, Yong Li   +8 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

In-plane ferroelectric tunnel junctions based on 2D α-In2Se3/semiconductor heterostructures

npj Computational Materials, 2023
Ferroelectric tunnel junctions (FTJs) have great potential for application in high-density non-volatile memories. Recently, α-In2Se3 was found to exhibit robust in-plane and out-of-plane ferroelectric polarizations at a monolayer thickness, which is ...
Zifang Liu, Pengfei Hou, Lizhong Sun, Evgeny Y. Tsymbal, Jie Jiang, Qiong Yang   +5 more
doaj   +1 more source

Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors

, 2017
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply ...
Alam, Muhammad A., Conrad, Nathan J., Jiang, Chunsheng, Maize, Kerry D., Qiu, Gang, Shakouri, Ali, Si, Mengwei, Su, Chun-Jung, Wu, Chien-Ting, Ye, Peide D., Zhou, Hong   +10 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Theory of PbTiO3, BaTiO3, and SrTiO3 Surfaces

, 1999
First-principles total-energy calculations are carried out for (001) surfaces of the cubic perovskite ATiO3 compounds PbTiO3, BaTiO3, and SrTiO3. Both AO-terminated and TiO2-terminated surfaces are considered, and fully-relaxed atomic configurations are ...
Meyer, B., Padilla, J., Vanderbilt, David   +2 more
core   +2 more sources

Record Energy Storage Performance Metrics in Ferroelectric Hafnia‐Based Films through Heterostructure Design

Advanced Functional Materials, EarlyView.
Dielectric capacitors typically struggle to achieve both high energy storage density and high efficiency at applied voltages below 10 V. Here, we address this challenge by introducing a novel hybrid fluorite/perovskite heterostructure design that combines ultra‐high recoverable energy storage density with efficient energy release (Uf ≈ 1016 J/cm3), at ...
Ampattu R. Jayakrishnan, Nuno Estrócio, Inês Silva, Raluca Negrea, Marian C. Istrate, Koppole C. Sekhar, Luís Marques, Judith L. MacManus‐Driscoll, Ignasi Fina, Florencio Sánchez, José P. B. Silva   +10 more
wiley   +1 more source

High frequency polarization switching of a thin ferroelectric film

, 2010
We consider both experimentally and analytically the transient oscillatory process that arises when a rapid change in voltage is applied to a $Ba_xSr_{1-x}TiO_3$ ferroelectric thin film deposited on an $Mg0$ substrate. High frequency ($\approx 10^{8} rad/
A. F. Devonshire, A. I. Maimistov, E. D. Mishina, E. V. Kazantseva, G. A. Smolensky, J.-G. Caputo, L. D. Landau, L. Landau, O. Vendik, V. L. Ginzburg, V. L. Ginzburg, V. M. Mukhortov, Yu. I. Balkarei   +12 more
core   +1 more source

Design Strategies and Emerging Applications of High‐Performance Flexible Piezoresistive Pressure Sensors

Advanced Functional Materials, EarlyView.
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo, Artur Ciesielski, Paolo Samorì   +2 more
wiley   +1 more source