Results 71 to 80 of about 77,203 (284)

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

Advanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj, Sandeep Sugathan, Jiyoung Kim, Si Joon Kim, Pil‐Ryung Cha   +4 more
wiley   +1 more source

Functional Behaviour of Materials: Ferroelectric Materials

, 2010
This set of animations provides understanding of the principles and applications of ferroelectric materials.
DoITPoMS, University of Cambridge, Rob Shaw, University of Cambridge, Neil Mathur, University of Cambridge   +2 more
core  

Oxygen‐Vacancy‐Regulated Crystallization and Ferroelectric Phase Stabilization in Hf0.5Zr0.5O2 Thin Films

Advanced Functional Materials, EarlyView.
Temperature‐resolved in situ grazing‐incidence wide‐angle X‐ray scattering reveals that oxygen vacancies actively regulate crystallization in Hf0.5Zr0.5O2 thin films. By decoupling macroscopic strain from intrinsic phase evolution, a vacancy‐lean environment significantly lowers the activation energy barrier for crystallization.
Hyun Woo Jeong, Jaewook Lee, Junseong Seo, Hyojun Choi, Dong Hee Han, Seungjae Heo, Tae‐Yeol Jeon, Yunseok Kim, Younghwan Lee, Min Hyuk Park   +9 more
wiley   +1 more source

Bulk‐Like Spin Cycloid and Fast Switching in Freestanding BiFeO3

Advanced Functional Materials, EarlyView.
Freestanding BiFeO3 membranes overcome substrate‐induced constraints by simultaneously restoring the intrinsic bulk‐like spin cycloid and enabling ≈50% faster ferroelectric switching than substrate‐clamped epitaxial thin films. This combination of robust noncollinear antiferromagnetic order and efficient electric‐field switching establishes ...
Pratap Pal, Xiaoxi Deng, Gi‐Yeop Kim, Kyoungjun Lee, Jheng‐Cyuan Lin, Prithwijit Mandal, Jiangfeng Yang, Paul Steadman, Pascal Manuel, Roger D. Johnson, Si‐Young Choi, Paolo G. Radaelli, Chang‐Beom Eom   +12 more
wiley   +1 more source

Skyrmion model of nano-domain nucleation in ferroelectrics and ferromagnets [PDF]

A skyrmion model of nano-domain ejection from large domain walls in ferroelectrics is presented, together with data on lead germanate Pb5Ge3O11 and comparison data on ferromagnetic iron garnet.
Scott, J. F., Gruverman, A., Dawber, M.
core   +1 more source

Nanoconfinement‐Induced Second‐Harmonic Circular Dichroism via Chirality–Ferroelectric Coupling

Advanced Functional Materials, EarlyView.
Nanoconfinement of a ferroelectric nematic liquid crystal within a chiral nanoporous sponge yields an enhanced second‐harmonic generation circular dichroism (|gSHG–CD| ≈ 1.1). Polarization‐resolved analysis suggests an additional magnetic‐dipole‐associated nonlinear contribution under nanoconfinement, highlighting chirality–ferroelectric coupling as a ...
Jae‐Jin Lee, Hiroya Nishikawa, Tae‐Woong Moon, Dong‐Ha Kim, Fumito Araoka, Suk‐Won Choi   +5 more
wiley   +1 more source

Passive Voltage Amplification in FE-FE-DE Heterostructure

IEEE Access
In this article, we have studied passive voltage amplification in FE-FE-DE heterostructure. We have stacked two different ferroelectric oxides; one is second-order transition ferroelectric material (continuous transition ferroelectric material) and the ...
Bhaskar Awadhiya, Sameer Yadav, Yashwanth Nanjappa, Abhishek Pahuja, Shivendra Yadav, Sachin Agrawal   +5 more
doaj   +1 more source