Results 151 to 160 of about 3,777 (297)

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

Combined Electrostatic and Strain Engineering of BiFeO3 Thin Films at the Morphotropic Phase Boundary

Advanced Electronic Materials
Multiferroic BiFeO3 exhibits a morphotropic phase boundary at large compressive strain that merges metastable phases of tetragonal (T) and rhombohedral (R) character resulting in giant ferroelectric and electromechanical responses.
Johanna Nordlander, Bastien F. Grosso, Marta D. Rossell, Aline Maillard, Bixin Yan, Elzbieta Gradauskaite, Nicola A. Spaldin, Manfred Fiebig, Morgan Trassin   +8 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Morphotropic Phase Boundary Engineering via Heterostructure for Low‐Voltage Ferroelectric Capacitors

Advanced Electronic Materials, EarlyView.
Morphotropic phase boundary engineering in HfxZr1‐xO2 heterostructures enables low‐voltage and fast ferroelectric switching. This layer promotes polarization switching near 0 V, resulting in ≈25% reduction in coercive voltage and enhanced capacitance. This heterostructure design provides a practical route for energy‐efficient ferroelectric capacitors ...
Changhyeon Han, Been Kwak, Ki‐Ryun Kwon, Jeong‐Han Kim, Jiyong Yim, Hyun‐Min Kim, Sangeun Kwak, Daewoong Kwon   +7 more
wiley   +1 more source

Modeling of Structure Effect for Ferroelectric Capacitor Based on Poly(vinylidene fluoride-trifluoroethylene) Ultrathin Films. [PDF]

Polymers (Basel), 2017
Li L, Zhang X, Chen H, Sun X, Yuan H, Xu H.   +5 more
europepmc   +1 more source

Discovery of an Ideal HgO12 Icosahedron and Magnetodielectric Coupling in HgCu3Ti4O12

Advanced Electronic Materials, EarlyView.
HgCu3Ti4O12, an A‐site‐ordered quadruple perovskite with a perfectly regular HgO12 coordination, has been synthesized for the first time using high‐pressure methods. The material shows antiferromagnetic ordering at 31 K together with an intrinsic dielectric anomaly, implying possible magnetodielectric coupling.
Haoyu Zheng, Jianfa Zhao, Jun Deng, Lei Duan, Xudong Shen, Zhiwei Hu, Luchuan Shi, Yuling Dai, Xiaoming Chen, Xubin Ye, Jun Zhang, Wenmin Li, Zheng Deng, Xiancheng Wang, Chang‐Yang Kuo, Chien‐Te Chen, Youwen Long, Runze Yu, Changjiang Xiao, Changqing Jin   +19 more
wiley   +1 more source