Results 131 to 140 of about 3,777 (297)

Unconventional Hysteretic Charge Filling in Moiré‐Reconstructed Helical Trilayer Graphene

Advanced Science, EarlyView.
In helical trilayer graphene, sequential twisting reconstructs the moiré landscape into periodic domains separated by aperiodic boundaries. Longitudinal transport reveals sweep‐direction‐dependent hysteresis, while the Hall response traces this behavior to hysteretic charge filling at the aperiodic boundaries.
Hangyeol Park, Junhyeok Oh, Rasoul Ghadimi, Chiranjit Mondal, Yungi Jeong, Won Beom Choi, Kenji Watanabe, Takashi Taniguchi, Bohm‐Jung Yang, Joonho Jang   +9 more
wiley   +1 more source

Spontaneous Polarization in an Ultrathin Improper-Ferroelectric/Dielectric Bilayer in a Capacitor Structure at Cryogenic Temperatures

, 2022
To determine the effect of depolarization and the critical thickness in improper-ferroelectric hexagonal-ferrite thin films, we investigate the polarization switching of a ferroelectric/dielectric bilayer in capacitor structures at 20 K.
Yin, Yuewei, Buragohain, Pratyush, Thind, Arashdeep Singh, Gruverman, Alexei, Yun, Yu, Mishra, Rohan, Li, Xin, Xu, X. S., Jiang, Xuanyuan   +8 more
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Reconfigurable Selector‐Only Memory (SOM) for Scalable Neuromorphic Computing

Advanced Science, EarlyView.
ABSTRACT Highly scalable reconfigurable neuromorphic devices are critical for addressing continual‐learning challenges in artificial intelligence. However, the scalability of existing reconfigurable devices is severely constrained by limited operating margins and insufficient process maturity.
Jin‐Yu Wen, Chuan‐Qi Yi, Ya‐Ru Zhang, Bin‐Hao Wang, Zi‐Xuan Liu, Chun‐Yu Zhou, Hao Tong, Xiang‐Shui Miao   +7 more
wiley   +1 more source

Nanoscale studies of switching behavior of ferroelectric thin films by using Piezoresponse Force Microscopy

, 2009
Ferroelectrics as the special group of materials not only have piezoelectricity and pyroelectricity but also have a spontaneous polarization which can be switched by an applied external electric field.
Wu, Dong
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Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS2 Memory Transistor

Advanced Science, EarlyView.
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Yeonsu Jeong, Honglei Wang, Pietro Tordi, Ying Chieh Hu, Adrián Tamayo, Bing Wu, Hyun Soo Ahn, Zdenek Sofer, Jong Hoon Jung, Massimo Bonini, Paolo Samorì   +10 more
wiley   +1 more source

Toward high-layer 3D hafnia ferroelectric stacks for neuromorphic computing: manufacturing insights and integration challenges

International Journal of Extreme Manufacturing
Ferroelectric hafnium-oxide (HfO _2 ) films have revitalized interest in brain-inspired hardware because of their high scalability, compatibility with complementary metal-oxide-semiconductor (CMOS) processes, and suitability for three-dimensional (3D ...
Ruifu Zhou, Hyeon-seo Do, Jang-Sik Lee
doaj   +1 more source

Ferroelectric film capacitor structure with selective doping

A ferroelectric film capacitor structure (FeCAP), in particular for memory applications, comprises a layer of doped ferroelectric material between facing electrodes having a varying/asymmetric doping profile, the concentration of the dopant in the ...
Tagantsev, Alexander, Stolitchnov, Igor
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Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

Advanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications

IEEE Journal of the Electron Devices Society
In this work, the ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) capacitor with a novel anti-ferroelectric (AFE) ZrO2 seed layer is thoroughly investigated for memory applications, by comparing with both HZO capacitors without seed layer and with O-phase ...
Mengxuan Yang, Kaifeng Wang, Bocheng Yu, Zhiyuan Fu, Chang Su, Qianqian Huang, Ru Huang   +6 more
doaj   +1 more source

In-situ Polarization Switching of Ferroelectric Pb(Zr,Ti)O3 thin film Capacitor in Transmission Electron Microscopy

, 2012
MasterThe ferroelectric domain switching is widely investigated as an enabling phenomenon of non-volatile random access memory, field-effect transistors, and tunneling barriers.
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