Results 121 to 130 of about 3,777 (297)

Single‐Atom Intercalation‐Driven Topological Ferroelectric Metal for High‐Performance Hydrogen Evolution Reaction

Advanced Science, EarlyView.
Single‐atom Cu intercalation enables porous AB3 monolayers to integrate ferroelectricity, metallicity, topology, and hydrogen evolution catalysis in one platform. Switchable FE polarization modulates work function and hydrogen adsorption thermodynamics, providing an electrically controllable route to activate basal‐plane HER activity in topological ...
Rongxuan Lu, Jian Zhang, Jialin Gong, Wenxian Li, Gang Zhang   +4 more
wiley   +1 more source

Effects of interfacial buffering layer on imprint and domain switching dynamics in Pb(Zr,Ti)O3 thin-film heterostructures

Journal of Advanced Dielectrics
Interfacial engineering is important for ferroelectric thin-film heterostructures because of the modulation of boundary conditions of the spontaneous polarizations and their switching behaviors, which are essential for ferroelectric electronics.
Lingzhi Lu, Chunyan Zheng, Weijie Zheng, Chenyu Dong, Yuhao Yue, Yawen Xu, Zheng Wen   +6 more
doaj   +1 more source

High Voltage Charging of a Capacitor Bank

, 2008
We have demonstrated the feasibility of charging a capacitor bank to a high voltage using an autonomous ultra-compact explosively driven source of prime power. The prime power source is a longitudinally driven shock wave depolarization of a ferroelectric
Shkuratov, Sergey I., Talantsev, Evgueni F., Baird, Jason, Ponomarev, A. V., Altgilbers, Larry L.   +4 more
core   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

A frequency output ferroelectric phase PNZT capacitor-based temperature sensor

, 2015
In this paper, a frequency output temperature sensor based on a 4% Niobium doped 20/80 Zr/Ti Lead Zirconate Titanate (PNZT) capacitor is proposed.
Omran, Hesham, Yao, Yingbang, Salama, Khaled N., Arsalan, Muhammad, Khan, Naveed   +4 more
core   +1 more source

Imaging Electric Polarization Switching in Multilayer Graphene

Advanced Science, EarlyView.
Domain wall sliding‐induced electric polarization switching is directly observed for the first time in multilayer graphene, enabled by a novel optical readout method. The polarization switching is realized upon application of global and local electric fields, and mechanical forces between neighboring polar domains of opposite out‐of‐plane polarizations
Zhou Zhou, Xiyao Peng, Jianfeng Bi, Jing He, Fei Xue, Jie Jiang, Huizhen Wu, Zhiwen Shi, Haoliang Qian, Toshikaze Kariyado, Sihan Zhao   +10 more
wiley   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source

The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET

IEEE Journal of the Electron Devices Society
Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFETs have significant potential for use in non-volatile memory applications. This is primarily due to their compatibility with CMOS technology and reliable switching characteristics.
Junghyeon Hwang, Giuk Kim, Hongrae Joh, Jinho Ahn, Sanghun Jeon   +4 more
doaj   +1 more source

Quantifying Structure–Property Relationships in Ferroelectric Polymers Toward High‐Performance Soft Robots

Advanced Science, EarlyView.
Here, we establish a quantitative relationship between the electrostriction coefficient (Q33) of FRPs and their interplanar spacing (d): Q33 = 100(Δd/d0+1) × Q33(s). Using this model, we fabricated high‐performance soft robots, including a biomimetic crawler (with a speed of 27 cm/s) and a butterfly (with a thrust‐to‐weight ratio of 0.71).
Ba Qin, Guotong Ding, Wanli Xing, Xiaoyu Yang, Wenxuan Li, Zhemin Chen, Shaobo Tan, Xiaoyong Wei, Zhicheng Zhang   +8 more
wiley   +1 more source

Investigating the Switching Dynamics of Antiferroelectric Capacitor Using Multidomain Phase-Field Approach

IEEE Journal of the Electron Devices Society
Here, we present a compact model based on multidomain phase-field approach that can capture the hysteresis loop and the transient negative capacitance (NC) regions in Metal-Antiferroelectric-Metal structures.
Muhammad Mainul Islam, Mohammad Adnaan, Sou-Chi Chang, Hai Li, Ian A. Young, Azad Naeemi   +5 more
doaj   +1 more source