Results 101 to 110 of about 3,777 (297)

Polarization‐Enabled Piezoelectric Tellurium–Selenium (TexSe1–x) Thin Films for Memory Switching and Artificial Synaptic Functions

Advanced Science, EarlyView.
Here, we demonstrate and investigate polarization‐enabled electromechanical responses in cryogenic physical vapor deposition (cryogenic PVD)‐deposited TexSe1‐x thin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry.
Chia‐Chen Chung, Mayur Chaudhary, Chia‐Hung Lo, Po‐Chien Lai, You‐Jie Lin, Ruei‐Hong Cyu, Yu‐Ren Peng, Bing‐Ni Gu, Zhao‐Feng Lou, Quynh Thi Le, Yi‐Jen Yu, Yen‐Fu Lin, Min‐Hung Lee, Ying‐Hao Chu, Chang‐Hong Shen, Der‐Hsien Lien, Yu‐Lun Chueh   +16 more
wiley   +1 more source

Engineering of Crystal and Domain Structures in Epitaxial Y:HfO2 Thin Films by YSZ Substrate Miscut

Advanced Science, EarlyView.
We investigate how YSZ substrate miscut influences crystal structure and domain formation in epitaxial Y‐doped HfO2 thin films. Using magnetron sputtering, high‐resolution X‐ray diffraction, atomic‐resolution scanning transmission electron microscopy, and first‐principles calculations, we systematically examine the characteristics of thickness‐ and ...
Jun Young Lee, Hyung‐Jin Choi, Kun Hee Ye, Haneul Choi, Byeong‐hyeon Lee, Min‐Seok Kim, Dong‐Hun Han, June Hyuk Lee, Sung Ok Won, Tae Heon Kim, Hye Jung Chang, Jung‐Hae Choi, Seung‐Hyub Baek   +12 more
wiley   +1 more source

Symmetry‐Driven Unconventional Magnetoelectric Coupling in Perovskite Altermagnets: From Bulk to the Two‐Dimensional Limit

Advanced Science, EarlyView.
The symmetry‐driven coexistence of altermagnetism and (anti)ferroelectricity in perovskites shows a strong dimensional dependence. Upon reducing the system from bulk to the two‐dimensional limit, only C‐type antiferromagnetic order retains ferroelectrically switchable altermagnetism, whereas A‐ and G‐type orders become conventional antiferromagnets ...
Zhou Cui, Ziye Zhu, Xunkai Duan, Bowen Hao, Xianzhang Chen, Jiayong Zhang, Tong Zhou   +6 more
wiley   +1 more source

Comparative investigation of passive voltage amplification in ferroelectric-dielectric heterostructure

Journal of Physics Communications
This paper investigates the ferroelectric-dielectric heterostructure with a fixed dielectric oxide and different ferroelectric oxides. This study is focused on the enhancement of capacitance, voltage amplification, and negative capacitance stabilization.
Archana C M, Bhaskar Awadhiya, Yashwanth Nanjappa   +2 more
doaj   +1 more source

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

IEEE Journal of the Electron Devices Society, 2018
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto   +3 more
doaj   +1 more source

Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets

Advanced Science, EarlyView.
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao, Fengxian Ma, Guoping Gao, Weizhen Meng, Ying Liu, Yandong Ma, Yalong Jiao   +6 more
wiley   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

Resistance Switching In Ferroelectric Materials

, 2007
A ferroelectric crystal with perovskite structure such as PbZr1−xTixO3 (PZT), SrBi2Ta2O9 (SBT), Bi3La1−xTixO12 (BLT) and non-perovskite structure such as Pb3Ge5O11 (PGO) have two polarization states, which can generate two resistance states: high ...
Tingkai Li, Sheng Teng Hsu
core   +1 more source

Flexible Unusual Ternary‐Component Graded‐Modulus Dielectric Films with High‐Density Capacitive Energy Storage

Advanced Science, EarlyView.
Hierarchical PP–LSR107–BaTiO3 nanocomposite films are fabricated by one‐step extrusion and stretching for roll‐to‐roll manufacture, combining high energy storage and processing flexibility. LSR107 surrounds BaTiO3‐rich regions, locating amorphous PP, decreasing defects, and introducing deep traps that homogenize the electric field and suppress charge ...
Yi Gao, Xin‐Jie Wang, Lei Huang, Kun Xing, Baoquan Wan, Yan‐Hui Song, Jian‐Tao Wang, Li‐Juan Yin, Tong Liang, Yan Meng, Zunpeng Feng, Kai Huang, Ke Bi, Shao‐Long Zhong, Zhi‐Min Dang   +14 more
wiley   +1 more source

Mole Fraction Dependent Passive Voltage Amplification in FE-DE Heterostructure

Electronic Materials
This paper explores ferroelectric–dielectric heterostructures comprising a ferroelectric oxide (Lead Zirconium Titanate (PbZr1−xTix O3)) with a varying mole fraction and a fixed dielectric oxide (Silicon dioxide (SiO2)).
Archana Chamarahalli Manjunatha, Pratheeksha Suresh, Akshatha Bhat, Vikash Mishra, Yashwanth Nanjappa, Bhaskar Awadhiya, Sachin Agrawal   +6 more
doaj   +1 more source