Results 111 to 120 of about 3,777 (297)
Reliability of Capacitive Read in Arrays of Ferroelectric Capacitors
2025 IEEE International Symposium on Circuits and Systems (ISCAS)4 pages, 6 figures, submitted and presented at ISCAS 2025 ...
Luca Fehlings +4 more
openaire +4 more sources
Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing
Advanced Science, EarlyView.A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee +9 more
wiley +1 more source
IEEE Journal of the Electron Devices SocietyThis study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations.
Sunghyun Woo +3 more
doaj +1 more source
Ferroelectric Thin-Film Devices
, 2008 Several fundamental physics problems concerning ferroelectric thin films are discussed with direct application to industry problems. The first is a model of dielectric breakdown under d.c.
Scott, J. F., Morrison, Finlay D
core +1 more source
Advanced Science, EarlyView.Herein, we demonstrate a breakthrough in dielectric energy storage by engineering local polarization units in high‐entropy multilayer ceramic capacitors (MLCCs). The optimized MLCCs achieve an ultrahigh recoverable energy density of 18.2 J cm−3 with 91% efficiency, coupled with exceptional thermal stability and fatigue resistance.
Shiyu Zhou +11 more
wiley +1 more source
Tungsten based electrodes for stacked capacitor ferroelectric memories
Fabrication of high-density ferroelectric memories requires the growth of the ferroelectric material on the drain contact metal. In standard 0.5 mum technology, tungsten plugs are applied to connect the drain contacts to the first metallization level. In
Trupina, L. +6 more
core +1 more source
Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks
Advanced Science, EarlyView.Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley +1 more source
High Temperature Materials and ProcessesHZO ferroelectric capacitor device have sparked considerable interest among researchers due to their high-speed storage capability and low-power consumption characteristics.
Wang Zhenhua +12 more
doaj +1 more source
Advanced Science, EarlyView.Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave +14 more
wiley +1 more source
A simple phase-shifting cell for reflectarray using a slot loaded with a ferroelectric capacitor
, 2014 International audience—A tunable reflectarray phase-shifting cell, designed for a resonance frequency of 5.6 GHz, is presented. The cell is based on a simple slot topology and loaded by a ferroelectric thin film capacitor of 60% tunability under 400 kV ...
Hartmut W. Gundel +9 more
core +1 more source