Results 121 to 130 of about 267 (149)

Ultralow-pressure-driven polarization switching in ferroelectric membranes. [PDF]

Nat Commun
Yang X, Han L, Ning H, Xu S, Hao B, Li YC, Li T, Gao Y, Yan S, Li Y, Gu C, Li W, Gu Z, Lun Y, Shi Y, Zhou J, Hong J, Wang X, Wu D, Nie Y.   +19 more
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An Extended Kolmogorov-Avrami-Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrystalline-Ferroelectric-Gate Field-Effect Transistors. [PDF]

Materials (Basel)
Sakai S, Takahashi M.
europepmc   +1 more source

Nonvolatile Modulation of Bi₂O₂Se/Pb(Zr,Ti)O₃ Heteroepitaxy. [PDF]

ACS Appl Mater Interfaces
Wang YJ, Yang ZL, Chen JW, Zhu R, Hsieh SH, Chang SH, Lin HY, Lin CL, Chen YC, Chen CH, Huang BC, Chiu YP, Yeh CH, Gao P, Chiu PW, Chen YC, Chu YH.   +16 more
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Ferroelectric materials for neuroinspired computing applications. [PDF]

Fundam Res
Wang D, Hao S, Dkhil B, Tian B, Duan C.
europepmc   +1 more source

In-Sensor-Memory Computing for Post-Von Neumann Intelligence: A Perspective. [PDF]

Nanomicro Lett
Tang H, Yu N, Min P, Guo R, Zhang G.
europepmc   +1 more source

A Review of Nanowire Devices Applied in Simulating Neuromorphic Computing. [PDF]

Nanomaterials (Basel)
Huang T, Wang Y, Jin Z, Liu H, Wang K, Chee TL, Shi Y, Yan S.   +7 more
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A ferroelectric fin diode for robust non-volatile memory. [PDF]

Nat Commun
Feng G, Zhu Q, Liu X, Chen L, Zhao X, Liu J, Xiong S, Shan K, Yang Z, Bao Q, Yue F, Peng H, Huang R, Tang X, Jiang J, Tang W, Guo X, Wang J, Jiang A, Dkhil B, Tian B, Chu J, Duan C.   +22 more
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Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices.

Mater Horiz
Jayakrishnan AR, Kim JS, Hellenbrand M, Marques LS, MacManus-Driscoll JL, Silva JPB.   +5 more
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Write Disturb in Ferroelectric FETs and Its Implication for 1T-FeFET AND Memory Arrays

IEEE Electron Device Letters, 2018
In this letter, the write disturb of Hf0.5Zr0.5O2-based 1T-FeFET nonvolatile AND memory array is experimentally investigated for ${V}_{W}$ /2 and ${V}_{W}$ /3 inhibition bias schemes to determine the worst-case memory sensing condition.
Kai Ni, Xueqing Li, Jeffrey A. Smith, Matthew Jerry, Suman Datta   +4 more
openaire   +1 more source

Simulation and Investigation of Gate-Stack Variations in Ferroelectric-FET (FeFET) with Double-Gate Structure

2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023
Lung-En Chang, Pin Su
openaire   +1 more source