FeFET-Based Computing-in-Memory Unit Circuit and Its Application [PDF]
NanomaterialsWith the increasing challenges facing silicon complementary metal oxide semiconductor (CMOS) technology, emerging non-volatile memory (NVM) has received extensive attention in overcoming the bottleneck.
Xiaojing Zha, Hao Ye
doaj +3 more sources
Nano Select, 2021 The ferroelectric field effect transistor (FeFET) using Poly (vinylidene fluoride‐trifluoroethylene)/Barium titanate [P(VDF‐TrFE)/BaTiO3] polymer nanocomposite as dielectric layer, has been fabricated and characterized.
Soney Varghese +2 more
exaly +2 more sources
Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Suman Datta, Michael Niemier, Kai Ni
exaly +3 more sources
Monolithic 3D Oscillatory Ising Machine Using Reconfigurable FeFET Routing for Large‐Scalability and Low‐Power Consumption [PDF]
Advanced ScienceIsing machines are attractive for efficiently solving NP‐hard combinatorial optimization problems (COPs). In this work, a scalable monolithic‐3D (M3D) oscillatory Ising machine (OIM) is proposed using ferroelectric field‐effect transistors (FeFETs ...
Joon Pyo Kim +8 more
doaj +2 more sources
Effect of post-metallization anneal on monolithic co-integration of Hf0.5Zr0.5O2-based FeFET and CMOS [PDF]
Scientific ReportsHafnium oxide-based ferroelectrics, particularly zirconium-doped HfO2 (HZO), have demonstrated excellent compatibility with CMOS fabrication processes. However, the impact of post-metallization annealing (PMA)—a key step in optimizing device performance ...
Jehyun An +7 more
doaj +2 more sources
Demonstration of high-reconfigurability and low-power strong physical unclonable function empowered by FeFET cycle-to-cycle variation and charge-domain computing [PDF]
Nature CommunicationsPhysical unclonable functions (PUFs) are of immense potential in authentication scenarios for Internet of Things (IoT) devices. For creditable and lightweight PUF applications, key attributes, including low power, high reconfigurability and large ...
Taixin Li +11 more
doaj +2 more sources
FeFET based Logic-in-Memory: an overview [PDF]
2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2021 Emerging non-volatile memories are getting new interest in the system design community. They are used to design logic-in-memory circuits and propose alternatives to von-Neuman architectures. Hafnium oxide-based based ferroelectric memory technology, which is fully compatible with CMOS technologies is particularly interesting for logic-in-memory designs.
Cédric Marchand 0002 +5 more
openaire +3 more sources
High-Performance and Area-Efficient Ferroelectric FET-Based Nonvolatile Flip-Flops
IEEE Access, 2021 Recently, nonvolatile systems with nonvolatile flip-flops (NVFFs) have gained prominence for their energy efficiency in energy-harvesting devices and battery-operated Internet of Things applications. They are normally-off instantly-on, and thus, can save
Sekeon Kim +4 more
doaj +1 more source
A three-terminal non-volatile ferroelectric switch with an insulator–metal transition channel
Scientific Reports, 2022 Ferroelectrics offer a promising material platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures.
Jaykumar Vaidya +5 more
doaj +1 more source
Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node
IEEE Journal of the Electron Devices Society, 2021 The random variation sources have a significant influence on the performance of ferroelectric field-effect transistor (FeFET). In this work, comparative analysis on the process variation induced variability of FeFET towards a 7 nm technology node has ...
Gihun Choe, Shimeng Yu
doaj +1 more source