Results 1 to 10 of about 751 (187)

High‐performance P(VDF‐TrFE)/BaTiO3 nanocomposite based ferroelectric field effect transistor (FeFET) for memory and switching applications

Nano Select, 2021
The ferroelectric field effect transistor (FeFET) using Poly (vinylidene fluoride‐trifluoroethylene)/Barium titanate [P(VDF‐TrFE)/BaTiO3] polymer nanocomposite as dielectric layer, has been fabricated and characterized.
Uvais Valiyaneerilakkal, Subash Cherumannil Karumuthil, Kulwant Singh   +2 more
exaly   +2 more sources

Scalable Complementary FeFET CAM Design

2023 IEEE International Symposium on Circuits and Systems (ISCAS), 2023
CAMs are frequently employed for data-centric applications. They offer excellent parallelism. Traditionally, they were implemented using the area-consuming SRAM. Recent advancements suggest using compact nonvolatile memories (NVMs) to create CAM cells to
Kanj, R., Fouda, M. E., Eltawil, Ahmed, Bekdache, O., Eddine, H. Nour, Al Tawil, M.   +5 more
core   +2 more sources

FeFET-Based Computing-in-Memory Unit Circuit and Its Application

Nanomaterials
With the increasing challenges facing silicon complementary metal oxide semiconductor (CMOS) technology, emerging non-volatile memory (NVM) has received extensive attention in overcoming the bottleneck.
Xiaojing Zha, Hao Ye
doaj   +2 more sources

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis, Suman Datta, Michael Niemier   +2 more
exaly   +3 more sources

Multi-Level FeFET-Based CAM Address Decoder [PDF]

2024 IFIP/IEEE 32nd International Conference on Very Large Scale Integration (VLSI-SoC)
Address decoders are an integral part of random access memories. They are typically implemented using fast logic optimised for low latency. The latter, however, are difficult to test, while their repair is considered to be impossible.
Taouil, Mottaqiallah, Hamdioui, Said, Gaydadjiev, Georgi, Makryniotis, Thomas   +3 more
core   +3 more sources

Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

Memories - Materials, Devices, Circuits and Systems, 2023
In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO2-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations.
Masud Rana Sk, Shubham Pande, Franz Müller, Yannick Raffel, Maximilian Lederer, Luca Pirro, Sven Beyer, Konrad Seidel, Thomas Kämpfe, Sourav De, Bhaswar Chakrabarti   +10 more
doaj   +2 more sources

Impact of Fringing Field on the Memory Window of FeFET

, 2023
In this study, ferroelectric field-effect-transistors (FeFETs) with nitride (SiON) interface having various gate lengths (LG) and gate widths (WG) were investigated to study the influence of gate dimensions on the memory window (MW) and endurance ...
Yannick Raffel (12758051), Franz Müller (13271700), Thomas Kaempfe (12758118), Maximilian Lederer (13271703), Sourav De (12294287), Konrad Seidel (13271706), Athira Sunil (16120204)   +6 more
core   +2 more sources

Modeling and Investigating Total Ionizing Dose Impact on FeFET

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
This article presents a novel, simulation-based study of the long-term impact of X-ray irradiation on the ferroelectric field effect transistor (FeFET).
Hussam Amrouch, Munazza Sayed, Kai Ni
core   +5 more sources

FeFET-Based MirrorBit Cell for High-Density NVM Storage

IEEE Transactions on Electron Devices
The HfO2-based ferroelectric field-effect transistor (FeFET) has become a center of attraction for nonvolatile memory application because of their low power, fast switching speed, high scalability, and CMOS compatibility.
Srinu, Rowtu, Lashkare, Sandip, Singh, Ajay Kumar, Saraswat, Vivek, Dunkel, Stefan, Beyer, Sven, Mulaosmanovic, Halid, Meihar, Paritosh, Ganguly, Udayan   +8 more
core   +3 more sources

FEOL Monolithic Co-Integration of FeFET and CMOS on 8-Inch Wafer Using Laser Spike Annealing With Implementation of an FeFET Inverter

IEEE Access
Ferroelectric devices and monolithic three-dimensional integration technology (M3D) with good CMOS process compatibility have emerged as promising solutions to scaling issue at the device and system levels, respectively.
Bohyeon Kang, Jehyun An, Jongseo Park, Giryun Hong, Beomjoo Ham, Jaeseong Pyo, Sung-Min Ahn, Rock-Hyun Baek   +7 more
doaj   +2 more sources