Results 11 to 20 of about 1,280 (239)
Impact of Fringing Field on the Memory Window of FeFET
, 2023 <p>In this study, ferroelectric field-effect-transistors (FeFETs) with nitride (SiON) interface having various gate lengths (LG) and gate widths (WG) were investigated to study the influence of gate dimensions on the memory window (MW) and endurance characteristics of the FeFETs.
Athira Sunil +6 more
openaire +2 more sources
Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET
Memories - Materials, Devices, Circuits and Systems, 2023 In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO2-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations.
Masud Rana Sk +10 more
doaj +2 more sources
Multi-Level FeFET-Based CAM Address Decoder [PDF]
2024 IFIP/IEEE 32nd International Conference on Very Large Scale Integration (VLSI-SoC)Address decoders are an integral part of random access memories. They are typically implemented using fast logic optimised for low latency. The latter, however, are difficult to test, while their repair is considered to be impossible. In this work we propose a highly scalable and testable address decoder solution, based on Content-Addressable Memories ...
Thomas Makryniotis +3 more
openaire +4 more sources
Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET
, 2022 S.8-11In this paper, we give a perspective and recent overview of the emerging memory FeFET by shading the light on different aspects of the memory operation.
Ali, T. +11 more
core +3 more sources
Ferroelectric Devices for In-Memory and In-Sensor Computing. [PDF]
Adv Sci (Weinh)Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Fang H +5 more
europepmc +2 more sources
FeFET-based MirrorBit cell for High-density NVM storage [PDF]
, 2023 HfO2-based Ferroelectric field-effect transistor (FeFET) has become a center of attraction for non-volatile memory applications because of their low power, fast switching speed, high scalability, and CMOS compatibility. In this work, we show an n-channel
Srinu, Rowtu +8 more
core +1 more source
Variability in Planar FeFETs—Channel Percolation Impact
IEEE Transactions on Electron Devices, 2023 sponsorship: This work was supported by the imec's Industrial Affiliation Program (IIAP). (imec's Industrial Affiliation Program (IIAP))
K. Kaczmarek +9 more
openaire +1 more source
, 2023 Hafnium oxide (HfO2)-based ferroelectric field effect transistors (FeFETs) have revolutionized the emerging non-volatile memory area, especially with the potential to replace flash memories for several applications.
Yannick Raffel (12758051) +10 more
core +1 more source
Direct Triboelectric Programming of a Ferroelectric Synaptic Transistor for Neuromorphic Tactile Perception. [PDF]
SmallTriboelectric signals directly program a ferroelectric synaptic transistor, enabling cumulative polarization‐controlled conductance modulation and neuromorphic tactile perception based on force‐ and frequency‐dependent mechanical stimuli. ABSTRACT Triboelectric nanogenerators provide a direct electrical interface to mechanical stimuli, yet most ...
Lee I, Jung J, Lee Y, Lee S.
europepmc +2 more sources
Defect profiling in FEFET Si:HfO2 layers [PDF]
Applied Physics Letters, 2020 Ferroelectric Si-doped HfO2 is a promising candidate for future generation memory devices. However, such devices are vulnerable to significant threshold voltage shifts resulting from charge trapping in oxide defects. We use complementary characterization and modeling techniques to reveal significant electron trapping/de-trapping behavior, together with
B. J. O'Sullivan +17 more
openaire +1 more source