Results 11 to 20 of about 751 (187)
FeMPIM: A FeFET-Based Multifunctional Processing-in-Memory Cell
IEEE Transactions on Circuits and Systems II: Express BriefsInternational audienceThe Von-Neumann memory wall bottleneck that keeps expanding is mainly caused by the frequent data transfer between the main memory and the processor.
Girard, Patrick +7 more
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FeFET based Logic-in-Memory: an overview [PDF]
2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2021 Emerging non-volatile memories are getting new interest in the system design community. They are used to design logic-in-memory circuits and propose alternatives to von-Neuman architectures. Hafnium oxide-based based ferroelectric memory technology, which is fully compatible with CMOS technologies is particularly interesting for logic-in-memory designs.
Cédric Marchand 0002 +5 more
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High-Performance and Area-Efficient Ferroelectric FET-Based Nonvolatile Flip-Flops
IEEE Access, 2021 Recently, nonvolatile systems with nonvolatile flip-flops (NVFFs) have gained prominence for their energy efficiency in energy-harvesting devices and battery-operated Internet of Things applications. They are normally-off instantly-on, and thus, can save
Sekeon Kim +4 more
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Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET
, 2022 S.8-11In this paper, we give a perspective and recent overview of the emerging memory FeFET by shading the light on different aspects of the memory operation.
Ali, T. +11 more
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A three-terminal non-volatile ferroelectric switch with an insulator–metal transition channel
Scientific Reports, 2022 Ferroelectrics offer a promising material platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures.
Jaykumar Vaidya +5 more
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Variability in Planar FeFETs—Channel Percolation Impact
IEEE Transactions on Electron Devices, 2023 sponsorship: This work was supported by the imec's Industrial Affiliation Program (IIAP). (imec's Industrial Affiliation Program (IIAP))
K. Kaczmarek +9 more
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Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node
IEEE Journal of the Electron Devices Society, 2021 The random variation sources have a significant influence on the performance of ferroelectric field-effect transistor (FeFET). In this work, comparative analysis on the process variation induced variability of FeFET towards a 7 nm technology node has ...
Gihun Choe, Shimeng Yu
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, 2023 Hafnium oxide (HfO2)-based ferroelectric field effect transistors (FeFETs) have revolutionized the emerging non-volatile memory area, especially with the potential to replace flash memories for several applications.
Yannick Raffel (12758051) +10 more
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Advanced Electronic Materials, 2023 The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen scavenging.
Bong Ho Kim +8 more
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Defect profiling in FEFET Si:HfO2 layers [PDF]
Applied Physics Letters, 2020 Ferroelectric Si-doped HfO2 is a promising candidate for future generation memory devices. However, such devices are vulnerable to significant threshold voltage shifts resulting from charge trapping in oxide defects. We use complementary characterization and modeling techniques to reveal significant electron trapping/de-trapping behavior, together with
B. J. O'Sullivan +17 more
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