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Low-power edge detection based on ferroelectric field-effect transistor [PDF]
Nature CommunicationsEdge detection is one of the most essential research hotspots in computer vision and has a wide variety of applications, such as image segmentation, target detection, and other high-level image processing technologies.
Jiajia Chen +16 more
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Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure [PDF]
Advanced Science, 2022 To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory ...
Sungpyo Baek +9 more
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The ferroelectric field-effect transistor with negative capacitance
npj Computational Materials, 2022 Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny.
I. Luk’yanchuk +4 more
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Investigation on the Negative Capacitance Field Effect Transistor with Dual Ferroelectric Region
Crystals, 2022 This paper proposes a new structure of the negative capacitance field effect transistor (NCFET), which features of the dual ferroelectric region (DFR) when compared to the conventional NCFET.
Jia-Fei Yao +7 more
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Nanomaterials, 2021 Due to the limitations of thermodynamics, the Boltzmann distribution of electrons hinders the further reduction of the power consumption of field-effect transistors.
Kun Yang +3 more
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Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation
Crystals, 2022 The low storage density of ferroelectric thin film memory currently limits the further application of ferroelectric memory. Topologies based on controllable ferroelectric domain structures offer opportunities to develop microelectronic devices such as ...
Jing Huang +3 more
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Van der Waals engineering of ferroelectric heterostructures for long-retention memory
Nature Communications, 2021 The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor ...
Xiaowei Wang +12 more
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EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)
International Islamic University Malaysia Engineering Journal, 2020 Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim +2 more
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Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET
Memories - Materials, Devices, Circuits and Systems, 2023 In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO2-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations.
Masud Rana Sk +10 more
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Ferroelectric Tuning of ZnO Ultraviolet Photodetectors
Nanomaterials, 2022 The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection ...
Haowei Xie +7 more
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