Results 21 to 30 of about 15,745,352 (243)
IET Circuits, Devices and Systems, 2021 Investigation and analysis of a ferroelectric material–based dopingless nanotube tunnel field‐effect transistor are conducted using a lead zirconate titanate (PZT) gate stack to induce negative capacitance in the device.
Apoorva +3 more
doaj +1 more source
Ferroelectric-Gated All 2D Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing
, 2023 With the continuous scaling down of the modern integrated circuits, conventional metal-oxide-semiconductor field effect transistors are becoming inefficient due to various nonideal effects such as enhanced short-channel effects.
Zhongyang Liu +13 more
core +1 more source
Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing
IEEE Journal of the Electron Devices Society, 2020 We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin +3 more
doaj +1 more source
Communications Physics, 2021 The ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics. Here,
Jasper Bizindavyi +3 more
doaj +1 more source
Chemical and biochemical sensors based on silicon nanowire field-effect transistor arrays [PDF]
, 2014 Field-effect transistors (FETs) made from semiconducting nanowires have great potential as electronic biochemical sensors if they can be integrated as an array in a CMOS-compatible architecture together with microfluidic channels and interfacing ...
Wipf, Mathias
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An Extended Gate Field Effect Transistor-based (EGFET-based) Urea Microbiosensor Based on Polypyrrole [PDF]
, 2021 Here, an extended – gate field effect transistor (EGFET) urea microsensor based on modified polypyrrole (PPy) is reported for the quantitative detection of urea in aqueous solution.
Mustafa, SEN, İpek, Avci, Merve, Oğuz
core +1 more source
Ferroelectric Field Effect Transistor for Memory and Switch Applications [PDF]
, 2011 Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid ...
Salvatore, Giovanni Antonio
core +2 more sources
Field-effect experiments on oxide superconductors thin films [PDF]
, 2006 [ITALIANO] Negli ultimi anni la ricerca nell’ambito della fisica dello stato solido ha rivolto grande interesse allo studio delle proprietà dei sistemi fortemente correlati ed in particolare degli ossidi perovskitici dei metalli di transizione.
Prigiobbo, Antonio
core +1 more source
Giant dielectric permittivity in ferroelectric thin films : domain wall ping pong [PDF]
, 2015 This study was supported by the National Key Basic Research Program of China (No. 2014CB921004), the National Natural Science Foundation of China (Nos.
Scott, James Floyd +7 more
core +1 more source
Ferroelectric-gate field effect transistor memories: device physics and applications
, 2020 This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory
Sakai, Shigeki +4 more
core +1 more source