Results 21 to 30 of about 2,265 (156)

EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)

International Islamic University Malaysia Engineering Journal, 2020
Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim, AHM Zahirul Alam, Naimah Binti Darmis   +2 more
doaj   +1 more source

Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

Memories - Materials, Devices, Circuits and Systems, 2023
In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO2-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations.
Masud Rana Sk, Shubham Pande, Franz Müller, Yannick Raffel, Maximilian Lederer, Luca Pirro, Sven Beyer, Konrad Seidel, Thomas Kämpfe, Sourav De, Bhaswar Chakrabarti   +10 more
doaj   +1 more source

Ferroelectric Tuning of ZnO Ultraviolet Photodetectors

Nanomaterials, 2022
The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection ...
Haowei Xie, Chenxu Kang, Muhammad Ahsan Iqbal, Xiaoliang Weng, Kewen Wu, Wei Tang, Lu Qi, Yu-Jia Zeng   +7 more
doaj   +1 more source

A Silicon Nanowire Ferroelectric Field‐Effect Transistor

Advanced Electronic Materials, 2020
The design and characterization of a Schottky‐type ferroelectric field‐effect transistor based on a nominally undoped silicon nanowire are reported. The nanowire transistor is fabricated by top‐down technology starting from a silicon‐on insulator wafer ...
Violetta Sessi, Maik Simon, Halid Mulaosmanovic, Darius Pohl, Markus Loeffler, Tom Mauersberger, Franz P. G. Fengler, Terence Mittmann, Claudia Richter, Stefan Slesazeck, Thomas Mikolajick, Walter M. Weber   +11 more
doaj   +1 more source

Impact of Series-Connected Ferroelectric Capacitor in HfO₂-Based Ferroelectric Field-Effect Transistors for Memory Application

IEEE Journal of the Electron Devices Society, 2020
In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thicknesses ...
Wei-Dong Liu, Zi-You Huang, Jun Ma, Zhi-Wei Zheng, Chun-Hu Cheng   +4 more
doaj   +1 more source

A Compact Model of Ferroelectric Field-Effect Transistor [PDF]

, 2022
In this letter, we present a compact model of ferroelectric field-effect-transistor (FEFET). The model consists of a ferroelectric (FE) capacitor model and a Berkeley Short-channel IGFET Model (BSIM), a standard SPICE MOSFET model.
Salahuddin, Sayeef, Tung, Chien-Ting, Pahwa, Girish, Hu, Chenming   +3 more
core   +1 more source

Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage

InfoMat, 2022
Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory owing to its outstanding performance such as low power consumption, fast speed, and high endurance. However, the ferroelectricity of conventional ferroelectric materials
Yu‐Ting Huang, Nian‐Ke Chen, Zhen‐Ze Li, Xue‐Peng Wang, Hong‐Bo Sun, Shengbai Zhang, Xian‐Bin Li   +6 more
doaj   +1 more source

Ferroelectric-Gated All 2D Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing

, 2023
With the continuous scaling down of the modern integrated circuits, conventional metal-oxide-semiconductor field effect transistors are becoming inefficient due to various nonideal effects such as enhanced short-channel effects.
Zhongyang Liu, Zhongyang Liu (1863094), Mingjie Li (754176), Mingjie Li, Yingtao Ding (13144818), Xiao Liu, Zhiming Chen, Xiao Liu (65413), Zhifang Liu, Zhifang Liu (439137), Yilin Sun, Yingtao Ding, Yilin Sun (793391), Zhiming Chen (1313025)   +13 more
core   +1 more source

Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor

IET Circuits, Devices and Systems, 2021
Investigation and analysis of a ferroelectric material–based dopingless nanotube tunnel field‐effect transistor are conducted using a lead zirconate titanate (PZT) gate stack to induce negative capacitance in the device.
Apoorva, Naveen Kumar, S. Intekhab Amin, Sunny Anand   +3 more
doaj   +1 more source

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2020
We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
doaj   +1 more source