Results 1 to 10 of about 3,700 (228)
As-deposited ferroelectric HZO on a III–V semiconductor [PDF]
By electrical characterization of thin films deposited by atomic layer deposition, HfxZr1−xO2 (HZO) is shown to be ferroelectric as-deposited, i.e., without any annealing step, using a thermal budget of 300 °C. By fabricating laminated HZO films rather than the traditional solid-solution HZO, a remanent polarization of Pr = 11 μC/cm2 and endurance ...
André Andersen +2 more
core +3 more sources
Associative Learning Emulation in HZO-Based Ferroelectric Memristor Devices
Neuromorphic computing inspired by biological synapses requires memory devices capable of mimicking short-term memory (STM) and associative learning. In this study, we investigate a 15 nm-thick Hafnium zirconium oxide (HZO)-based ferroelectric memristor device, which exhibits robust STM characteristics and successfully replicates Pavlov’s dog ...
Sungjun Kim, Maria Rasheed
exaly +4 more sources
In this work, we study the structural and electrical properties of Hafnium Zirconium Oxide (HZO) thin films deposited by Hf0.5Zr0.5O2 single-target sputtering to fabricate a TiN/(14-/22 nm-thick) HZO/TiN stack.
M. B. Hachemi +8 more
doaj +2 more sources
RF-Characterization of HZO Thin Film Varactors [PDF]
A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz.
Sukhrob Abdulazhanov +2 more
exaly +3 more sources
HZO-based FerroNEMS MAC for in-memory computing
This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of a 250×30 μm2 unimorph cantilever with 20-nm-thick ferroelectric HZO on 1 μm SiO2.
Jadhav, Shubham +6 more
openaire +3 more sources
Chronic and Recurrent Herpes Zoster Ophthalmicus
Background and Objectives: This study sought to investigate the natural course, the chronicity and recurrence rate, and the risk factors of chronic and recurrent herpes zoster ophthalmicus (HZO).
Soo Min Lee +6 more
doaj +1 more source
Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process.
Da Hee Hong +6 more
doaj +1 more source
Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology.
Greta Segantini +11 more
doaj +1 more source
A Rare Complication of Herpes Zoster Ophthalmicus (HZO)
Retrobulbar optic neuritis is a rare complication of herpes zoster ophthalmicus (HZO). We report a case of a 27-year-old man who presented with a progressive left blurring of vision for one week. A history of vesicular rashes in the left trigeminal nerve area preceded his condition.
Phang, Daniel Sen Kai +4 more
openaire +2 more sources
Tight junctions (TJs) regulate the transit of ions and molecules through the paracellular pathway in epithelial cells. Zonula occludens 2 (ZO-2) is a cytoplasmic TJ protein.
Misael Cano-Cortina +4 more
doaj +1 more source

