Results 1 to 10 of about 3,083 (223)

As-deposited ferroelectric HZO on a III–V semiconductor [PDF]

Applied Physics Letters, 2022
By electrical characterization of thin films deposited by atomic layer deposition, HfxZr1−xO2 (HZO) is shown to be ferroelectric as-deposited, i.e., without any annealing step, using a thermal budget of 300 °C.
Andersen, André, André Andersen, Anton E. O. Persson, Persson, Anton E. O., Wernersson, Lars-erik, Lars-Erik Wernersson   +5 more
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Study of structural and electrical properties of ferroelectric HZO films obtained by single-target sputtering

AIP Advances, 2021
In this work, we study the structural and electrical properties of Hafnium Zirconium Oxide (HZO) thin films deposited by Hf0.5Zr0.5O2 single-target sputtering to fabricate a TiN/(14-/22 nm-thick) HZO/TiN stack.
M. B. Hachemi, B. Salem, V. Consonni, H. Roussel, A. Garraud, G. Lefevre, S. Labau, S. Basrour, A. Bsiesy   +8 more
doaj   +2 more sources

Polarization Switching Kinetics in Thin Ferroelectric HZO Films

Nanomaterials, 2022
Ferroelectric polycrystalline HfO2 thin films are the most promising material for the implementation of novel non-volatile ferroelectric memories because of their attractive properties, such as compatibility with modern Si technology, perfect scalability,
Anastasia Chouprik, Kondratyuk, Ekaterina, Ekaterina Kondratyuk, Chouprik, Anastasia   +3 more
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On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes

Nanomaterials, 2022
Despite the great potential of Hf0.5Zr0.5O2 (HZO) ferroelectrics, reliability issues, such as wake-up, fatigue, endurance limitations, imprint and retention loss, impede the implementation of HZO to nonvolatile memory devices.
Khakimov, Roman R., Andrey M. Markeev, Koroleva, Aleksandra A., Anna G. Chernikova, Aleksandra A. Koroleva, Markeev, Andrey M., Chernikova, Anna G., Roman R. Khakimov   +7 more
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A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric

Solids, 2023
This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the ...
Paul Jacob, Shan Deng, Kai Ni
exaly   +2 more sources

Effect of bottom electrodes on HZO thin film properties

, 2021
International audienceThe discovery of memristor, theorized in 1971 by L. Chua, has led to the development of novel artificial neuromorphic concepts and devices, including ferroelectric-based ones.
Segantini, Greta, Rojo Romeo, Pedro, Cañero Infante, Ingrid, Deleruyelle, D., Barhoumi, Rabei, Baboux, Nicolas, Vilquin, Bertrand, Manchon, Benoit   +7 more
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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization [PDF]

Applied Physics Letters, 2020
Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated.
Robin Athle, Wernersson, Lars Erik,, Athle, Robin, Persson, Karl Magnus,, Pontus Littow, Persson, Anton E.O.,, Borg, Mattias, Mattias Borg, Lars-Erik Wernersson, Persson, Anton E.O., Johannes Svensson, Wernersson, Lars Erik, Karl-Magnus Persson, Littow, Pontus, Persson, Karl Magnus, Anton E. O. Persson, Svensson, Johannes, Borg, Mattias,, Lund University., Svensson, Johannes,, Athle, Robin,, Littow, Pontus,   +21 more
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Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films via Novel Interface Layer Approach [PDF]

Advanced Science
Ferroelectric doped hafnium oxide (HfO2) has emerged as CMOS‐compatible and scalable ferroelectric for next‐generation memory/in‐memory computing devices. However, its high coercive field (Ec) and limited endurance remain key obstacles.
Ji Soo Kim, Benedetta Gaggio, Babak Bakhit, Veniero Lenzi, Luis Marques, Simon M. Fairclough, Nives Strkalj, Duk‐Hyun Choe, José P. B. Silva, J. L. MacManus‐Driscoll   +9 more
doaj   +2 more sources

Associative Learning Emulation in HZO-Based Ferroelectric Memristor Devices

Materials
Neuromorphic computing inspired by biological synapses requires memory devices capable of mimicking short-term memory (STM) and associative learning. In this study, we investigate a 15 nm-thick Hafnium zirconium oxide (HZO)-based ferroelectric memristor ...
Sungjun Kim, Euncho Seo, Maria Rasheed
core   +3 more sources

Study of Imprint Dynamics in HZO Ferroelectric Capacitors

, 2023
International audienceThe discovery of the ferroelectric orthorhombic phase in doped HfO2 gave a major boost to the interest for integrated ferroelectric oxides in the CMOS industry [1].
Segantini, Greta, Deleruyelle, Damien, Manchon, Benoît, Rojo Romeo, Pedro, Drouin, Dominique, Canero Infante, Ingrid, Vilquin, Bertrand   +6 more
core   +3 more sources