Results 41 to 50 of about 3,700 (228)

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Meibomian gland morphological changes in ocular herpes zoster patients based on AI analysis

Frontiers in Cell and Developmental Biology, 2022
Varicella-zoster virus (VZV) infections result in a series of ophthalmic complications. Clinically, we also discover that the proportion of dry eye symptoms was significantly higher in patients with herpes zoster ophthalmicus (HZO) than in healthy ...
Xinxin Yu, Xu Jia, Zuhui Zhang, Yana Fu, Jing Zhai, Naimei Chen, Qixin Cao, Zhentao Zhu, Qi Dai   +8 more
doaj   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Cryogenic Ferroelectricity of HZO With an Aluminum Oxide Interlayer

IEEE Transactions on Electron Devices
In this work, we investigate the cryogenic performance of hafnia-based ferroelectric capacitors with and without an aluminum oxide (ALO) interlayer, comparing conventional metal-ferroelectric-metal (MFM) structures to metal-ferroelectric-insulator-metal (MFIM) counterparts.
Mamidala Karthik Ram, Lars-Erik Wernersson   +1 more
openaire   +2 more sources

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Room temperature PVD TiN to improve the ferroelectric properties of HZO films in the BEoL

, 2022
S.535-539Zirconium-doped hafnium oxide (HZO) crystallizes at low temperatures and is thus ideal to implement ferroelectric (FE) functionalities into the back end of line (BEoL). Therefore, metal-ferroelectric-metal (MFM) capacitors are of great interest.
Ali, T., Lederer, M., Lehninger, D., Seidel, K., Gerlich, L., Mertens, K.   +5 more
core   +1 more source

Rapid cooling process-driven enhancement of an orthorhombic phase in ferroelectric HfZrOx of sub-3 nm ultrathin films by atomic layer deposition

Applied Surface Science Advances
In recent decades, fluorite-structured HfZrOx (HZO) has been spotlighted as a promising ferroelectric material for next-generation non-volatile memory devices.
So Yeon Shin, Yeon-Je Yu, Ae Rim Choi, Dohee Kim, Ja-Yong Kim, Seung Wook Ryu, Il-Kwon Oh   +6 more
doaj   +1 more source

Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO [PDF]

Applied Physics Letters, 2019
In this work, we investigate the accumulative polarization (P) switching characteristics in ferroelectric (FE) thin films under the influence of sequential sub-coercive electric-field pulses. Performing the dynamic phase-field simulation (based on time-dependent Landau-Ginzburg model) and experimental measurement on Hf0.4Zr0.6O2 (HZO), we analyze the ...
Atanu K. Saha, Kai Ni, Sourav Dutta, Suman Datta, Sumeet Gupta   +4 more
openaire   +2 more sources

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

Advanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj, Sandeep Sugathan, Jiyoung Kim, Si Joon Kim, Pil‐Ryung Cha   +4 more
wiley   +1 more source

Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

npj 2D Materials and Applications, 2021
Herein, the direct growth of polar orthorhombic phase in Hf0.5Zr0.5O2 (HZO) thin films is reported using Pulsed Laser Deposition (PLD). The growth of HZO onto a preheated (700 °C) silicon substrate mimics the rapid thermal annealing, which allows the ...
Hae Won Cho, Pavan Pujar, Minsu Choi, Seunghun Kang, Seongin Hong, Junwoo Park, Seungho Baek, Yunseok Kim, Jaichan Lee, Sunkook Kim   +9 more
doaj   +1 more source