Results 51 to 60 of about 3,083 (223)

Herpes Zoster Ophthalmicus (HZO)

International Journal of Integrative Sciences
Herpes Zoster Ophthalmicus (HZO) is a reactivation of the varicella-zoster virus that can cause serious ocular complications, particularly in elderly patients. We report a case of a 60-year-old female presenting with unilateral facial vesicular rash, right eye pain, redness, and decreased vision. Ophthalmologic examination showed conjunctival hyperemia,
Arsyiva Putri Azhari, Mila Karmila
openaire   +1 more source

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimide

Journal of Materiomics
Here we report substantial effects of inserting PVD-prepared highly-conductive ultrathin WOx as interfacial layer in TiN/Hf0.5Zr0.5O2(HZO)/TiN structure on the ferroelectricity of HZO thin films.
Chunxu Zhao, Huiping Wang, Xinyu Gu, Wei Zhang, Yubao Li   +4 more
doaj   +1 more source

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET

, 2022
Art.222903, 6 S.The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative.
Büttner, T., Polakowski, P., Steinke, P., Kämpfe, T., Pätzold, B., Hanisch, N., Czernohorsky, M., Ali, T., Hoffmann, R., Riedel, S., Seidel, K., Rudolph, M., Calvo, J., Löhr, D., Müller, J., Kühnel, K., Thrun, X.   +16 more
core   +1 more source

Low‐Temperature Processed Optoelectronic Synapses With Enhanced Responsivity for Edge‐Oriented In‐Sensor Reservoir Computing

Advanced Materials Technologies, EarlyView.
Image pixels are converted into optical pulse sequences to stimulate the optoelectronic synaptic device, generating dynamic responses that form high‐dimensional features. These features improve classification efficiency and demonstrate strong potential for neuromorphic edge computing systems.
Jo‐Lin Chen, Shi‐Qian Guo, Yu‐Chuan Chiu, Po‐Tsun Liu   +3 more
wiley   +1 more source

Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

npj 2D Materials and Applications, 2021
Herein, the direct growth of polar orthorhombic phase in Hf0.5Zr0.5O2 (HZO) thin films is reported using Pulsed Laser Deposition (PLD). The growth of HZO onto a preheated (700 °C) silicon substrate mimics the rapid thermal annealing, which allows the ...
Hae Won Cho, Pavan Pujar, Minsu Choi, Seunghun Kang, Seongin Hong, Junwoo Park, Seungho Baek, Yunseok Kim, Jaichan Lee, Sunkook Kim   +9 more
doaj   +1 more source

Effectiveness of Live Zoster Vaccine in Preventing Herpes Zoster Ophthalmicus (HZO)

, 2017
Background Herpes zoster ophthalmicus (HZO), caused by reactivation of varicella-zoster virus in or around the eye, can be severe and often results in care-seeking that may be less discretionary than for uncomplicated herpes zoster (HZ).
Morgan Marks, Edwin Lewis, Elizabeth Earley, Patricia Saddier, Laurie Aukes, Bruce Fireman, Joan Bartlett, Nicola P Klein, John Hansen   +8 more
core   +1 more source

Study on ALD process conditions of ultra-thin HZO using heteroleptic Hf/Zr precursors [PDF]

, 2023
학위논문(석사) -- 서울대학교대학원 : 공과대학 재료공학부(하이브리드 재료), 2023. 2. 황철성.최근 고유전물질로 가장 널리 사용되고 있는 Doped-HfO2을 적용한 DRAM, Fe-FET, FTJ 등의 어플리케이션에 대한 연구가 활발히 진행되고 있다. 그 중 ZrO2를 도핑 한 HZO 박막은 DRAM의 capacitor 대체 물질로 그 중요성이 크게 증가하고 있다.
김하니
core  

Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films [PDF]

, 2023
The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed ferroelectric/antiferroelectric phase at x=0.8, a more gradual total polarization update is shown ...
Dahlberg, Hannes, Wernersson, Lars-Erik
core   +1 more source

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

Advanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee, Seungjun Lee, Tae‐Hyeon Kim, Yonghee Jeong, Gwangmin An, Minsu Ko, Junsu Yu, Heung Soo Kim, Yang Chai, Sungjun Kim   +9 more
wiley   +1 more source