Results 51 to 60 of about 3,700 (228)

Oxygen‐Vacancy‐Regulated Crystallization and Ferroelectric Phase Stabilization in Hf0.5Zr0.5O2 Thin Films

Advanced Functional Materials, EarlyView.
Temperature‐resolved in situ grazing‐incidence wide‐angle X‐ray scattering reveals that oxygen vacancies actively regulate crystallization in Hf0.5Zr0.5O2 thin films. By decoupling macroscopic strain from intrinsic phase evolution, a vacancy‐lean environment significantly lowers the activation energy barrier for crystallization.
Hyun Woo Jeong, Jaewook Lee, Junseong Seo, Hyojun Choi, Dong Hee Han, Seungjae Heo, Tae‐Yeol Jeon, Yunseok Kim, Younghwan Lee, Min Hyuk Park   +9 more
wiley   +1 more source

An Acute Case of Herpes Zoster Ophthalmicus with Ophthalmoplegia

Case Reports in Ophthalmological Medicine, 2012
Herpes zoster ophthalmicus (HZO) with oculomotor nerve involvement is rare, even rarer as an acute presentation rather than sequelae of HZO. In this paper we present a case of cutaneous HZO in which our patient's initial presentation was one of complete ...
Wasim Hakim, Rosalie Sherman, Tamer Rezk, Kanwar Pannu   +3 more
doaj   +1 more source

Enhanced Ferroelectric Phase Formation via Local Structure Modification in the Pre‐Crystalline State of Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam, Gerald R. Bejger, Waseem A. Wani, Kristina M. Holsgrove, Andrew N. Titus, Niyorjyoti Sharma, Shihao Wang, Keithen Orson, Megan K. Lenox, Liron Shvilberg, Yong Kyu Choi, Ian A. Brummel, Benjamin L. Aronson, Petra Reinke, Quentin Ramasse, Amit Kumar, Brian J. Rodriguez, Christina M. Rost, Jon F. Ihlefeld   +18 more
wiley   +1 more source

Modelling Ferroelectric Hysteresis of HZO Capacitor with Jiles-Atherton Model for Non-Volatile Memory Applications

, 2023
We report a ferroelectric model based on the Jiles-Atherton equations which can successfully reproduce the experimental polarization-voltage hysteresis of thin-film hafnium zirconium oxide (HZO) capacitor devices.
Majumdar, Sayani; id_orcid, Prunnila, Mika, Paasio, Ella   +2 more
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Isolated optic neuritis with a concurrent abnormal trigeminal nucleus on imaging: case report of a rare complication of herpes zoster ophthalmicus

BMC Neurology, 2018
Background Herpes zoster ophthalmicus (HZO) is an inflammation related to reactivation of the latent varicella zoster virus (VZV), involving the ophthalmic branch of the trigeminal nerve. Optic neuritis (ON), a rare ocular complication following HZO, has
Kavin Vanikieti, Anuchit Poonyathalang, Panitha Jindahra, Piyaphon Cheecharoen, Patchalin Patputtipong, Tanyatuth Padungkiatsagul   +5 more
doaj   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimide

Journal of Materiomics
Here we report substantial effects of inserting PVD-prepared highly-conductive ultrathin WOx as interfacial layer in TiN/Hf0.5Zr0.5O2(HZO)/TiN structure on the ferroelectricity of HZO thin films.
Chunxu Zhao, Huiping Wang, Xinyu Gu, Wei Zhang, Yubao Li   +4 more
doaj   +1 more source

Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO₂ Capacitor

IEEE Journal of the Electron Devices Society, 2018
We have experimentally observed the negative-capacitance transient effect in a ferroelectric HfZrO2 (FE-HZO) capacitor and developed an equivalent circuit model based on the Landau- Khalatnikov (LK) theory. By considering multiple domains (MD) and domain
Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi, Toshiro Hiramoto   +3 more
doaj   +1 more source

High-Mobility and Reliability Ultra-Thin-Channel Oxide Semiconductor Field-Effect Transistors for Chip-Interconnect-Embedded Logic and Ferroelectric Memory. [PDF]

Adv Mater
BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chen CK, Hooda S, Sivan M, Wan Q, Villena MA, Beltrando B, Xu Z, Fang Z, Zamburg E, Roldán JB, Larcher L, Thareja G, Thean AV.   +12 more
europepmc   +2 more sources