Results 61 to 70 of about 3,083 (223)

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

open access: yesAdvanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung   +7 more
wiley   +1 more source

Rapid cooling process-driven enhancement of an orthorhombic phase in ferroelectric HfZrOx of sub-3 nm ultrathin films by atomic layer deposition

open access: yesApplied Surface Science Advances
In recent decades, fluorite-structured HfZrOx (HZO) has been spotlighted as a promising ferroelectric material for next-generation non-volatile memory devices.
So Yeon Shin   +6 more
doaj   +1 more source

An Acute Case of Herpes Zoster Ophthalmicus with Ophthalmoplegia

open access: yesCase Reports in Ophthalmological Medicine, 2012
Herpes zoster ophthalmicus (HZO) with oculomotor nerve involvement is rare, even rarer as an acute presentation rather than sequelae of HZO. In this paper we present a case of cutaneous HZO in which our patient's initial presentation was one of complete ...
Wasim Hakim   +3 more
doaj   +1 more source

Search for Magnetoelectric Coupling at the 57Fe/Hf0.5Zr0.5O2 Interface Using Operando Synchrotron Mössbauer Spectroscopy

open access: yesAdvanced Materials Interfaces, 2022
Multiferroic materials with coexisting ferroelectric and ferromagnetic orders have attracted much attention due to the magnetoelectric coupling opening alternative prospects for electronic devices.
Vitaly Mikheev   +6 more
doaj   +1 more source

Photoelectric‐Coupled Ferroelectric Heterojunctions for Ultrahigh NO2 Sensing With Polarization‐Memory‐Assisted Interfacial Modulation

open access: yesAdvanced Science, EarlyView.
This study demonstrates a Bi2WO6/SrBi2Ta2O9 heterojunction where light‐driven ferroelectric polarization reversal couples with persistent photoconductivity, enabling exclusive NO2 selective room‐temperature sensing. The device achieves a two‐order‐of‐magnitude sensitivity enhancement over an unpolarized device, a sub‐ppb detection limit, and robust ...
Liping Tan   +11 more
wiley   +1 more source

Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage

open access: yes, 2021
344369A multi-level cell (MLC) operation as a 1–3 bit/cell of the FeFET emerging memory is reported by utilizing optimized Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based on ferroelectric laminates.
Müller, Johannes   +19 more
core   +2 more sources

Meibomian gland morphological changes in ocular herpes zoster patients based on AI analysis

open access: yesFrontiers in Cell and Developmental Biology, 2022
Varicella-zoster virus (VZV) infections result in a series of ophthalmic complications. Clinically, we also discover that the proportion of dry eye symptoms was significantly higher in patients with herpes zoster ophthalmicus (HZO) than in healthy ...
Xinxin Yu   +8 more
doaj   +1 more source

Diversity and Spatial Distribution of Hydrazine Oxidoreductase (hzo) Gene in the Oxygen Minimum Zone Off Costa Rica [PDF]

open access: yes, 2013
Anaerobic ammonia oxidation (anammox) as an important nitrogen loss pathway has been reported in marine oxygen minimum zones (OMZs), but the community composition and spatial distribution of anammox bacteria in the eastern tropical North Pacific (ETNP ...
Hongbin Liu (217935)   +14 more
core   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 Capacitor

open access: yesIEEE Journal of the Electron Devices Society, 2018
We have experimentally observed the negative-capacitance transient effect in a ferroelectric HfZrO2 (FE-HZO) capacitor and developed an equivalent circuit model based on the Landau- Khalatnikov (LK) theory. By considering multiple domains (MD) and domain
Kyungmin Jang   +3 more
doaj   +1 more source

Home - About - Disclaimer - Privacy