Results 61 to 70 of about 3,700 (228)

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source

Phylogenetic analysis of representative Hzo protein sequences deduced from obtained Bohai Sea hzo gene sequences.

, 2013
The tree branch distances represent amino acid substitution rate, and the scale bar represents the expected number of changes per homologous position. The cluster 2 Hzo sequence (GenBank accession CAJ70788) was used as outgroup.
Xiaoshou Liu (400439), Er Hua (400438), Zhinan Zhang (400437), Zishan Yu (234148), Nianzhi Jiao (138252), Haixia Zhou (128581), Hongyue Dang (400436)   +6 more
core   +1 more source

Enhanced Polarization Switching in HfZrO₂ MFS FeFET Using WO_x Interlayer

IEEE Journal of the Electron Devices Society
We demonstrate that the memory window (MW) of HfZrO2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with an InZnO channel/HZO/W gate stack can be noticeably widened to over 2 V by introducing an amorphous WO2.7 interlayer (IL) into the gate ...
Eunjin Kim, Hyoungjin Park, Jiae Jeong, Jiyong Woo   +3 more
doaj   +1 more source

Search for Magnetoelectric Coupling at the 57Fe/Hf0.5Zr0.5O2 Interface Using Operando Synchrotron Mössbauer Spectroscopy

Advanced Materials Interfaces, 2022
Multiferroic materials with coexisting ferroelectric and ferromagnetic orders have attracted much attention due to the magnetoelectric coupling opening alternative prospects for electronic devices.
Vitaly Mikheev, Roberto Mantovan, Sergei Zarubin, Anna Dmitriyeva, Elena Suvorova, Philipp A. Buffat, Andrei V. Zenkevich   +6 more
doaj   +1 more source

Bias dependent band alignment in Ga2O3 ferroelectric interface by operando HAXPES

Scientific Reports
We present a fundamental study of the band alignment at the interface of HfZrO4 (HZO) with Ge-doped Ga2O3. Ge is an alternative n-type dopant for the wide band gap Ga2O3 due to its shallow donor level and favorable MBE growth conditions.
Anthony Boucly, Tyson C. Back, Thaddeus J. Asel, Brenton A. Noesges, Amber N. Reed, Sabyasachi Ganguli, Jonathan Ludwick, Cynthia Bowers, Krishnamurthy Mahalingam, Sylvia Matzen, Nick Barrett   +10 more
doaj   +1 more source

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

Advanced Science, EarlyView.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee, Jaewon Park, Nawoon Kim, Seohyeon Ju, Seong‐Cheol Jang, Hyun‐Suk Kim, Sungjun Kim   +6 more
wiley   +1 more source

Effectiveness of Live Zoster Vaccine in Preventing Herpes Zoster Ophthalmicus (HZO)

, 2017
Background Herpes zoster ophthalmicus (HZO), caused by reactivation of varicella-zoster virus in or around the eye, can be severe and often results in care-seeking that may be less discretionary than for uncomplicated herpes zoster (HZ).
Morgan Marks, Edwin Lewis, Elizabeth Earley, Patricia Saddier, Laurie Aukes, Bruce Fireman, Joan Bartlett, Nicola P Klein, John Hansen   +8 more
core   +1 more source

Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction

ACS Applied Electronic Materials
This study investigates the effects of ferroelectric thickness scaling in a bilayer-structured ferroelectric tunnel junction. It was found that both the remnant polarization and the transport mechanisms exhibit a correlation with the thickness of the ferroelectric film.
Luca Carpentieri, Thomas Mikolajick, Stefan Slesazeck   +2 more
openaire   +2 more sources

Mechanisms of Temperature‐Dependent Hysteresis in Freestanding BaTiO3/MoS2 Heterostructures

Advanced Science, EarlyView.
Freestanding ferroelectric BaTiO3 membranes are combined with monolayer MoS2 into 2D field‐effect transistors. At room temperature they provide ultrahigh‐κ gating with steep subthreshold swing and minimal hysteresis. Upon cooling, strong ferroelectric switching produces two stable memory states with long retention times.
Thomas Pucher, Federico Mompeán, Víctor Rouco, Carlos León, Jacobo Santamaría, Carmen Munuera, Mar García‐Hernández, Andres Castellanos‐Gomez   +7 more
wiley   +1 more source