Results 81 to 90 of about 3,083 (223)

Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

AIP Advances, 2021
Field effect transistors (FETs) using two-dimensional molybdenum disulfide (MoS2) as the channel material has been considered one of the most potential candidates for future complementary metal-oxide-semiconductor technology with low power consumption ...
Yanxiao Sun, Gang Niu, Wei Ren, Jinyan Zhao, Yankun Wang, Heping Wu, Luyue Jiang, Liyan Dai, Ya-Hong Xie, Pedro Rojo Romeo, Jordan Bouaziz, Bertrand Vilquin   +11 more
doaj   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Hardware‐Based On‐Chip Learning Using a Ferroelectric AND‐Type Array With Random Synaptic Weights

Advanced Intelligent Systems, EarlyView.
This work demonstrates an energy‐efficient on‐chip learning system using an Metal‐Ferroelectric‐Insulator‐Semiconductor FeAND synaptic array. By employing a feedback alignment scheme with a separate backward array using fixed random weights, the system overcomes directional limitations of AND‐type arrays and achieves robust, low‐power learning suitable
Minsuk Song, Changhyeon Han, Joonhyeok Choi, Jongwoo Lee, Hyun‐min Kim, Wongi Hong, Ujin Kim, Sung‐Tae Lee, Daewoong Kwon   +8 more
wiley   +1 more source

MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications

AIP Advances, 2020
Recently, hafnium oxide (HfO2)-based ferroelectric materials have achieved phenomenal success in next-generation nonvolatile memory applications.
Ming-Yang Cha, Hao Liu, Tian-Yu Wang, Lin Chen, Hao Zhu, Li Ji, Qing-Qing Sun, David Wei Zhang   +7 more
doaj   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions

JPhys Materials
Herein, we describe a comparative study of the ferroelectric properties of epitaxial Hf _0.5 Zr _0.5 O _2 films grown on La _0.67 Sr _0.33 MnO _3 /SrTiO _3 (100) and La _0.67 Sr _0.33 MnO _3 /DyScO _3 (110) across a temperature range of 32–298 K for the ...
J W Adkins, S Kumari, T Gage, I Fina, F Sánchez   +4 more
doaj   +1 more source

Risk of stroke after HZ and HZO compared to control periods.

, 2016
Risk of stroke after HZ and HZO compared to control periods.
Sigrid Behr (3361223), Kathrin Thöne (3361226), Edeltraut Garbe (182117), Hélène Bricout (2658079), Tania Schink (3361229)   +4 more
core   +1 more source

Bioinspired Crossmodal Tactile Sensory Nerve for High‐Accurate Object Recognition

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
An artificial crossmodal sensory neuron system (ACSNS) that combines a complementary memristor with high‐sensitivity pressure–temperature bimodal sensors, which integrate tactile perception, information storage, and neuromorphic computing. With the aid of machine learning, this ACSNS presents an improved accuracy of 96.67% in recognizing temperatures ...
Delu Chen, Yuetong Han, Xiaodong Wang, Wanli Cheng, Jianjie He, Xing Li, Yoshifumi Oshima, Chongxin Shan, Shaobo Cheng   +8 more
wiley   +1 more source

Texture modulation of ferroelectric Hf0.5Zr0.5O2 thin films by engineering the polymorphism and texture of tungsten electrodes

Journal of Materiomics
This study proposes a novel approach to achieving highly reliable, low-voltage polarization switching of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films using polymorph- and orientation-controlled W electrodes ((111)-textured α-W and (200)-textured β-W) by ...
Kun Yang, Hyun Woo Jeong, Jaewook Lee, Yong Hyeon Cho, Ju Yong Park, Hyojun Choi, Young Yong Kim, Younghwan Lee, Yunseok Kim, Min Hyuk Park   +9 more
doaj   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source