Results 81 to 90 of about 3,700 (228)

Study on ALD process conditions of ultra-thin HZO using heteroleptic Hf/Zr precursors [PDF]

, 2023
학위논문(석사) -- 서울대학교대학원 : 공과대학 재료공학부(하이브리드 재료), 2023. 2. 황철성.최근 고유전물질로 가장 널리 사용되고 있는 Doped-HfO2을 적용한 DRAM, Fe-FET, FTJ 등의 어플리케이션에 대한 연구가 활발히 진행되고 있다. 그 중 ZrO2를 도핑 한 HZO 박막은 DRAM의 capacitor 대체 물질로 그 중요성이 크게 증가하고 있다.
김하니
core  

Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films via Novel Interface Layer Approach

Advanced Science
Ferroelectric doped hafnium oxide (HfO2) has emerged as CMOS‐compatible and scalable ferroelectric for next‐generation memory/in‐memory computing devices. However, its high coercive field (Ec) and limited endurance remain key obstacles.
Ji Soo Kim, Benedetta Gaggio, Babak Bakhit, Veniero Lenzi, Luis Marques, Simon M. Fairclough, Nives Strkalj, Duk‐Hyun Choe, José P. B. Silva, J. L. MacManus‐Driscoll   +9 more
doaj   +1 more source

Influence of bottom electrodes on HZO thin film features

, 2021
The I3E ECLAUSion project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 801512 Neuromorphic computing is promising for the processing of massive data with an extremely low power consumption. After the discovery of memristors the research has been focused
Rojo Romeo, Pedro, Ingrid C., Infante, Segantini, Greta, Romeo, Pedro, Manchon, Benoit, Baboux, Nicolas, Ca Nero Infante, Ingrid, Barhoumi, Rabei, Deleruyelle, D., Vilquin, Bertrand, Sriram, Sharath   +10 more
openaire   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

, 2020
Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated.
Robin Athle, Wernersson, Lars Erik,, Athle, Robin, Persson, Karl Magnus,, Pontus Littow, Persson, Anton E.O.,, Borg, Mattias, Mattias Borg, Lars-Erik Wernersson, Persson, Anton E.O., Johannes Svensson, Wernersson, Lars Erik, Karl-Magnus Persson, Littow, Pontus, Persson, Karl Magnus, Anton E. O. Persson, Svensson, Johannes, Borg, Mattias,, Lund University., Svensson, Johannes,, Athle, Robin,, Littow, Pontus,   +21 more
core   +1 more source

Diversity and Spatial Distribution of Hydrazine Oxidoreductase (hzo) Gene in the Oxygen Minimum Zone Off Costa Rica [PDF]

, 2013
Anaerobic ammonia oxidation (anammox) as an important nitrogen loss pathway has been reported in marine oxygen minimum zones (OMZs), but the community composition and spatial distribution of anammox bacteria in the eastern tropical North Pacific (ETNP ...
Hongbin Liu (217935), Kataoka, Takafumi, Carolyn Buchwald, Hongbin Liu, Liangliang Kong, Buchwald, Carolyn, Hongmei Jing (478501), Carolyn Buchwald (478503), Liangliang Kong (478500), Takafumi Kataoka (478502), Kong, Liangliang, Liu, Hongbin, Hongmei Jing, Jing, Hongmei, Takafumi Kataoka   +14 more
core   +2 more sources

Endurance characteristics of HZO FeFETs with different interface layers

Journal of Physics: Conference Series
Abstract This paper investigates the endurance characteristics of Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with SiO2 and Y2O3 interface layers. FeFETs have emerged as a promising candidate for high-density ferroelectric memory development, featuring advantages like non-destructive readout, non-volatility, and ...
Xing Liu, Hui Zhu
openaire   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Overall cumulative risks of complications in the HZO, HZN, and HZT cohorts.

, 2016
Overall cumulative risks of complications in the HZO, HZN, and HZT cohorts.
Meng-Yin Lin (2180896), Sing-Huh Liu (3202980), Che-Chen Lin (304866), Wen-Yi Wang (3202977), I-Jong Wang (223289)   +4 more
core   +1 more source