Results 91 to 100 of about 3,700 (228)

Piezoelectric Materials in Medical Ultrasound: A Comprehensive Review From Fundamentals to Translational Prospects

Information &Functional Materials, EarlyView.
Piezoelectric materials are reviewed as active platforms for medical ultrasound, bridging electromechanical fundamentals, transducer architectures, and biomedical applications. Material–device co‐design is emphasized as the key to high‐performance diagnosis, therapy, monitoring, wearable ultrasound, and emerging ultrasound‐responsive functions ...
Jianan Li, Qing Wan
wiley   +1 more source

Ferroelectric HZO Capacitor on CoSi2 Electrode: Exploring CMOS-Compatible Alternative to TiN and W

Ferroelectric Capacitors (FeCAPs) based on HfZrO2 (HZO) are promising building blocks for ferroelectric (FE) Non-Volatile Memories (NVM). In this work, we investigate for the first time the deposition of FE HZO on top of epitaxial Cobalt Silicide (CoSi2),
Barbot, Justine, Bernert, Kerstin, Viegas, Alison Erlene, Lehninger, David, Gek, Hee Eng, Seidel, Konrad, Mähne, Hannes, Akin, Wilson Entalai Thomas, Peller, Markus, Franca, Selma   +9 more
core   +1 more source

Herpes Zoster Ophthalmicus: Presentation, Complications, Treatment, and Prevention

Infectious Diseases and Therapy
Herpes zoster (HZ) is caused by reactivation of latent infection of varicella zoster virus (VZV) in sensory (cranial, dorsal root) ganglia. Major risk factors for HZ are increasing age and immunosuppression.
John Litt, Anthony L. Cunningham, Francisco Arnalich-Montiel, Raunak Parikh   +3 more
doaj   +1 more source

Thickness Scaling of High‐Permittivity HfO2/ZrO2 Superlattice Capacitors With Morphotropic Phase Boundary

Information &Functional Materials, EarlyView.
Through morphotropic phase boundary (MPB) engineering enabled by optimized HfO2/ZrO2 sublayer stacking, thin HfO2/ZrO2 superlattice films scaled down to 5 nm achieve a high permittivity of 68, along with low leakage current, excellent high‐frequency performance, and thermal stability.
Xihui Yuan, Kaixuan Li, Yanwei Zhang, Haiwen Xu, Jiuren Zhou, Hengrui Zhang, Siying Zheng, Yan Liu, Yue Hao, Genquan Han   +9 more
wiley   +1 more source

Van der Waals ferroelectric semiconductor tunnel junction with ultra‐low switching voltage

InfoMat, EarlyView.
Ferroelectric tunnel junctions are promising building blocks for energy‐efficient memory and brain‐inspired computing, but their practical use is limited by the relatively high voltages required for operation. Here, we develop an all‐two‐dimensional ferroelectric tunnel junction based on AgBiP2Se6 that enables reliable memory operation below 0.2 V and ...
Fuqin Sun, Ruihuan Duan, Ziqian Xin, Yinxiao Li, Bingyuan Xue, Zihua Tian, Kejie Guan, Fan Liu, Xiaoshuang Gou, Yingyi Wang, Weifan Zhou, Cheng Zhang, Lin Liu, Zhao Wang, Jia Shi, Zheng Liu, Xiaowei Wang, Ting Zhang   +17 more
wiley   +1 more source

Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory

Advanced Science
HfO2‐based ferroelectric devices have garnered lots of attention in embedded memory due to its exceptional complementary metal oxide semiconductor (CMOS) compatibility as well as sub‐10 nm scalability.
Yinchi Liu, Jiajia Tao, Xiaoyu Dou, Kangli Xu, Yuchun Li, Handong Zhu, Hongliang Lu, Yanxi Li, Chi Liu, Jiezhi Chen, Lin Chen, Shijin Ding, Jixuan Wu, Wenjun Liu   +13 more
doaj   +1 more source

Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique

APL Materials, 2018
We report on the stabilization of ferroelectric HfxZr1−xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique.
Éamon O’Connor, Mattia Halter, Felix Eltes, Marilyne Sousa, Andrew Kellock, Stefan Abel, Jean Fompeyrine   +6 more
doaj   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Interface Engineering for Expanded Stable Polarization Regime Upon Cycling in Ferroelectric Hf0.5Zr0.5O2

Small, EarlyView.
Interfaces can be crucial on the properties of ferroelectric HfO2. In this work, it is demonstrated that a top nanolayer of ZrO2 significantly improves the ferroelectric properties of epitaxial La‐doped HfO2 films on SrTiO3(001). Endurance reaches 1011 cycles with a technological window of 108 cycles, in which the remanent polarization variation is ...
M. Ghiasabadi Farahani, C. Chirila, R. Solanas, L. Pintilie, I. Fina, F. Sánchez   +5 more
wiley   +1 more source

Hardware‐Efficient Locality‐Preserving Graph Processing via Ferroelectric Fowler–Nordheim Tunneling Crossbar Array

Small, EarlyView.
Real‐world graph data are directly mapped onto an mCBA, enabling node similarity to be computed through a single current readout. Strongly nonlinear devices suppress long‐range multi‐hop contributions while preserving local connectivity, whereas weakly nonlinear devices allow excessive signal propagation.
Jae‐Hyun Lee, Jun‐Young Park, Jeong‐Min Lee, Hyun‐Jun Kang, Seon‐Jin Yoo, Ki‐Nam Park, Yoon Ho Jang, Joon‐Kyu Han   +7 more
wiley   +1 more source