Results 91 to 100 of about 3,083 (223)
Contribution to the study of structural and ferroelectric properties of HZO thin films
La découverte de la ferroélectricité dans les couches minces d'oxyde d'hafnium dopé en a fait l'un des principaux matériaux sans plomb, compatibles avec le CMOS processus.
Hachemi, Mohammed Bilal
core
ABSTRACT High‐density memory systems require a high on‐state current density (Jon) to ensure fast read speeds and large sensing margins in cross‐point array applications. However, achieving high Jon in atomically thin ferroelectric tunnel junctions (FTJs) remains an unmet challenge, hindered by parasitic interfacial layer (IL), depolarization fields ...
Laeyong Jung +3 more
wiley +1 more source
Polarization current-based reservoir computing utilizing an anti-ferroelectric-like HfZrO2 capacitor
We have experimentally demonstrated the physical reservoir computing by employing the polarization switching current dynamics of an Hf1−xZrxO2 (HZO)-based metal/ferroelectric/metal capacitor with Zr content x = 0, 0.5, and 0.75.
Shin-Yi Min +5 more
doaj +1 more source
Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction
This study investigates the effects of ferroelectric thickness scaling in a bilayer-structured ferroelectric tunnel junction. It was found that both the remnant polarization and the transport mechanisms exhibit a correlation with the thickness of the ferroelectric film.
Luca Carpentieri +2 more
openaire +2 more sources
Abstract Infection is a known cause of abdominal aortic aneurysm (AAA), and matrix metalloproteases‐2 (MMP‐2) secreted by vascular smooth muscle cells (SMCs) plays a key role in the structural disruption of the middle layer of the arteries during AAA progression.
Yi‐Wen Lin +6 more
wiley +1 more source
Recently,hafniumzirconiumoxide(HfxZr1-xO2, HZO) films gained considerable attentionin sensors, displays, and memory devices. However,one of the main drawbacks of HZO material is that asthe film thickness increases, the dielectric constant (kappa)can ...
Qin, Yixin +3 more
core +1 more source
Contribution à l'étude des propriétés structurales et ferroélectriques des couches minces HZO
The discovery of ferroelectricity in doped hafnium oxide thin films has turned it into one of the leading CMOS-compatible lead-free materials. Ferroelectric hafnium oxide can open the way to the design of new devices in multiple fields like ferroelectric
Hachemi, Mohammed Bilal
core
Influence of bottom electrodes on HZO thin film features
The I3E ECLAUSion project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 801512 Neuromorphic computing is promising for the processing of massive data with an extremely low power consumption. After the discovery of memristors the research has been focused
Rojo Romeo, Pedro +10 more
openaire +1 more source
Dielectric capacitors typically struggle to achieve both high energy storage density and high efficiency at applied voltages below 10 V. Here, we address this challenge by introducing a novel hybrid fluorite/perovskite heterostructure design that combines ultra‐high recoverable energy storage density with efficient energy release (Uf ≈ 1016 J/cm3), at ...
Ampattu R. Jayakrishnan +10 more
wiley +1 more source
Endurance characteristics of HZO FeFETs with different interface layers
Abstract This paper investigates the endurance characteristics of Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with SiO2 and Y2O3 interface layers. FeFETs have emerged as a promising candidate for high-density ferroelectric memory development, featuring advantages like non-destructive readout, non-volatility, and ...
Xing Liu, Hui Zhu
openaire +1 more source

