Results 111 to 120 of about 3,700 (228)

Millisecond‐Scale Relaxation in Metastable HZO Ferroelectric Capacitors for Bio‐Inspired Temporal Computing

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Through the introduction of a niobium oxide layer into a hafnia ferroelectric capacitor stack, we build a memory device with a strong imprint effect. This imprint leads to a millisecond retention loss that can be tuned by the programming conditions that can be utilized as a scalable, analog hardware time constant for bio‐inspired temporal computing ...
Luca Fehlings, Thomas Mikolajick, Beatriz Noheda, Erika Covi   +3 more
wiley   +1 more source

Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1‐xO2/SiO2 Interface in Ferroelectric Field‐Effect‐Transistor

Advanced Electronic Materials
In this work, the polarization‐dependent operating characteristics of TiN/HfxZr1‐xO2(HZO)/SiO2/Si ferroelectric FETs (FeFETs) are investigated, and remote HZO/SiO2 interface traps (Dit,FE/DE) are quantitatively separated from Si/SiO2 interface traps ...
Haneul Lee, Sujong Kim, Changhyeon Han, Haesung Kim, Hyojin Yang, Sejun Park, Sanghyuk Yun, Yoon Jung Lee, Sung‐Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon, Jong‐Ho Bae   +12 more
doaj   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Contribution à l'étude des propriétés structurales et ferroélectriques des couches minces HZO

, 2022
The discovery of ferroelectricity in doped hafnium oxide thin films has turned it into one of the leading CMOS-compatible lead-free materials. Ferroelectric hafnium oxide can open the way to the design of new devices in multiple fields like ferroelectric
Hachemi, Mohammed Bilal
core  

Buried-Gate Flexible CNT FET with HZO Dielectric on Mica Substrate

Nanomaterials
Carbon nanotube field-effect transistors (CNT FETs) are considered strong candidates for next-generation flexible electronics due to their excellent carrier mobility and mechanical flexibility. However, the fabrication of CNT FETs on conventional flexible substrates such as PI or PET is often limited by surface roughness, chemical incompatibility, and ...
Haiou Li, Jiamin Shen, Zhihao Zhuo, Fabi Zhang, Xingpeng Liu, Qing Liao   +5 more
openaire   +2 more sources

Multi‐Vth IGZO FETs Enabled by Continuous‐wave Laser Scanning Annealing for Low Thermal Budget 3D Integration

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
A novel strategy is used to fabricate multi‐threshold‐voltage (multi‐Vth) IGZO FETs via continuous‐wave laser scanning annealing (CW‐LSA). By tuning the laser power and scan speed, low, standard, and high Vth values of 0.22, 0.42, and 0.62 V, respectively, were achieved on a single wafer with excellent uniformity (coefficient of variation: 2.17%–6.61%).
Jun‐Hyeok Choi, Kiyung Kim, Hyeon‐Seok Shin, Uigwan Shin, Byeong Gwan Kim, Jae Hyeon Jun, Joon Kim, Yoonyoung Chung, Byoung Hun Lee   +8 more
wiley   +1 more source

Two‐Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
This review explains how atomically thin materials can combine information storage, processing, and mechanical flexibility in neuromorphic devices. It connects material properties and engineering strategies with device architecture, synaptic behavior, and performance under bending.
Junzhe Tang, Letian Dai
wiley   +1 more source

Bilateral Pattern Electroretinogram Abnormalities in Patients with Herpes Zoster Keratitis and Conjunctivitis

Ophthalmology and Therapy
Introduction Herpes zoster ophthalmicus (HZO) results from the reactivation of varicella zoster virus (VZV) in the ophthalmic branch of the trigeminal nerve. The inflammation caused by VZV involves multiple tissues in the eyes.
Jingyi Li, Yuexin Wang, Xin Xie, Weizhen Zeng, Shiying Li, Rupesh Agrawal, Yun Feng   +6 more
doaj   +1 more source

TWIN: Ternary Weight and Input Neural Network Accelerators Using an Experimentally Informed Ferroelectric Carbon Nanotube FET Compact Model

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Ferroelectric HZO thin films enable negative differential resistance in calibrated FeCNTFET models, creating stable ternary switching states for compact multi‐valued logic. The resulting device‐to‐architecture framework demonstrates efficient ternary neural‐network accelerators with substantial area and power savings, highlighting ferroelectric CNT ...
Mohammad Khaleqi Qaleh Jooq, Abdolah Amirany, Martin F. Sarott, Beatriz Noheda, Johanna van Gent González, Kian Jafari, Elham Heidari, Mostafa Rahimi Azghadi, Hamed Dalir, Saeed Afshar   +9 more
wiley   +1 more source

Observation of inhomogeneous oxygen distribution in electric-field-cycled Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition

Journal of Advanced Dielectrics
This study investigates the impact of ion distribution, with a particular focus on oxygen ions, on the stability and phase transformation processes of the hafnium zirconium oxide (HZO) ferroelectric phase.
Yilong Liu, Zhe Yu, Yao Wu, Yanjie Zhao, Lu Liu, Shiqing Deng, Shi Liu, Wen Dong   +7 more
doaj   +1 more source