Results 111 to 120 of about 3,083 (223)

Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1‐xO2/SiO2 Interface in Ferroelectric Field‐Effect‐Transistor

Advanced Electronic Materials
In this work, the polarization‐dependent operating characteristics of TiN/HfxZr1‐xO2(HZO)/SiO2/Si ferroelectric FETs (FeFETs) are investigated, and remote HZO/SiO2 interface traps (Dit,FE/DE) are quantitatively separated from Si/SiO2 interface traps ...
Haneul Lee, Sujong Kim, Changhyeon Han, Haesung Kim, Hyojin Yang, Sejun Park, Sanghyuk Yun, Yoon Jung Lee, Sung‐Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon, Jong‐Ho Bae   +12 more
doaj   +1 more source

Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique

APL Materials, 2018
We report on the stabilization of ferroelectric HfxZr1−xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique.
Éamon O’Connor, Mattia Halter, Felix Eltes, Marilyne Sousa, Andrew Kellock, Stefan Abel, Jean Fompeyrine   +6 more
doaj   +1 more source

Buried-Gate Flexible CNT FET with HZO Dielectric on Mica Substrate

Nanomaterials
Carbon nanotube field-effect transistors (CNT FETs) are considered strong candidates for next-generation flexible electronics due to their excellent carrier mobility and mechanical flexibility. However, the fabrication of CNT FETs on conventional flexible substrates such as PI or PET is often limited by surface roughness, chemical incompatibility, and ...
Haiou Li, Jiamin Shen, Zhihao Zhuo, Fabi Zhang, Xingpeng Liu, Qing Liao   +5 more
openaire   +2 more sources

Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration.

Ferroelectric field-effect transistors (FeFETs) are increasingly important for in-memory computing and monolithic 3D (M3D) integration in system-on-chip (SoC) applications.
Heo, Su Jin, Jang, Jae Eun, Pyo, Goeun, Choi, Hong Soo, Kim, Seonhyoung, Jeong, Heejae, Baik, Seunghun, Kwon, Hyuk-Jun, Kim, Dongsu   +8 more
core   +2 more sources

Engineering of HZO layer for the fabrication of ultimate 3D vertical transistors for Memory-in-Logic applications M. Materials engineering for advanced semiconductor devices

, 2023
International audienceThe Von Neumann architecture has been the dominant philosophy behind every computing system over the past decades, consisting of a computing and a memory unit, with data being transferred in between.
Neckel, Bruno, Trommer, Jens, Moustakas, Konstantinos, Mathieu, Fabrice, Lecestre, Aurélie, Larrieu, Guilhem, Mikolajick, Thomas   +6 more
core   +1 more source

Enhanced Ferroelectric Properties of MoS2-Capped HZO Thin Films Induced by Thermal Mismatch Stress

Hf0.5Zr0.5O2 (HZO) is a promising material for applications to ferroelectric (FE) nanoscale devices, such as FE random access memory (FeRAM) and FE field effect transistor (FeFET), due to its down-scaling capability and CMOS compatibility.
Soyeon Lee
core  

Bilateral Pattern Electroretinogram Abnormalities in Patients with Herpes Zoster Keratitis and Conjunctivitis

Ophthalmology and Therapy
Introduction Herpes zoster ophthalmicus (HZO) results from the reactivation of varicella zoster virus (VZV) in the ophthalmic branch of the trigeminal nerve. The inflammation caused by VZV involves multiple tissues in the eyes.
Jingyi Li, Yuexin Wang, Xin Xie, Weizhen Zeng, Shiying Li, Rupesh Agrawal, Yun Feng   +6 more
doaj   +1 more source

Observation of inhomogeneous oxygen distribution in electric-field-cycled Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition

Journal of Advanced Dielectrics
This study investigates the impact of ion distribution, with a particular focus on oxygen ions, on the stability and phase transformation processes of the hafnium zirconium oxide (HZO) ferroelectric phase.
Yilong Liu, Zhe Yu, Yao Wu, Yanjie Zhao, Lu Liu, Shiqing Deng, Shi Liu, Wen Dong   +7 more
doaj   +1 more source

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Journal of Materiomics
Hf0.5Zr0.5O2 (HZO) ferroelectric thin films have gained significant attention for the development of next-generation ferroelectric memories by complementary-metal-oxide semiconductor (CMOS) back-end-of-line (BEOL) processing, due to their relatively low ...
Changfan Ju, Binjian Zeng, Ziqi Luo, Zhibin Yang, Puqi Hao, Luocheng Liao, Qijun Yang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, Min Liao   +10 more
doaj   +1 more source

Realization and characterization of HZO-based Schottky-Barrier FETs towards Logic-in-Memory applications

The recent development of increasingly successful artificial intelligence applications have determined an unprecedented demand for optimized hardware for data-intensive computing. The currently employed device architecture, which relies on the separation
Wind, Lukas, Kim, Khiye, Lellig, Sebastian, Weber, Walter Michael; orcid:, Nazzari, Daniele, Mayr, Dominik, Sistani, Masiar; orcid:   +6 more
core   +1 more source