Results 131 to 140 of about 3,700 (228)

First Demonstration of HZO/beta-Ga2O3 Ferroelectric FinFET with Improved Memory Window [PDF]

open access: yes
We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time.
Bae, Hagyoul   +10 more
core   +1 more source

Realization and characterization of HZO-based Schottky-Barrier FETs towards Logic-in-Memory applications

open access: yes
The recent development of increasingly successful artificial intelligence applications have determined an unprecedented demand for optimized hardware for data-intensive computing. The currently employed device architecture, which relies on the separation
Wind, Lukas   +6 more
core   +1 more source

High-precision hyperdimensional computing enabled by in-memory computing using high-polarization ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> capacitors. [PDF]

open access: yesMicrosyst Nanoeng
Paasio E   +12 more
europepmc   +1 more source

Reconfigurable Logic-in-Memory Oxide Transistors Enabled by Transferable Ferroelectric HZO. [PDF]

open access: yesACS Nano
Huang CC   +9 more
europepmc   +1 more source

Electrostriction-driven phase instability enables giant pseudo-piezoelectricity in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>. [PDF]

open access: yesSci Adv
Bergne A   +20 more
europepmc   +1 more source

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