Results 131 to 140 of about 3,083 (223)

TiO₂ nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory. [PDF]

Nano Converg
Kang H, Kwak J, Kim G, Lee S, Kim Y, Park S, Lim S, Seo K, Kim W, Ha D, Ahn J, Jeon S.   +11 more
europepmc   +1 more source

Research on the gate reliability of HZO FeFETs with different interface layers

Journal of Physics: Conference Series
Abstract The gate reliability of Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with varying interface layers was investigated in this paper, specifically SiO2 and Y2O3. By employing voltage-ramp and time-dependent dielectric breakdown (TDDB) tests, along with an analysis of different gate dimensions, we provide ...
openaire   +1 more source

Emergence of unconventional ferroelectric phase in ultrathin Hf_0.5Zr_0.5O₂ films. [PDF]

Sci Adv
Lee S, Lee H, Lee HH, Lee HK, Kim JH, Park S, Lee HJ, Bae H, Jo S, Hasan M, Ha Y, Kuh BJ, Heo J, Choe DH, Lee E.   +14 more
europepmc   +1 more source

First Demonstration of HZO/beta-Ga2O3 Ferroelectric FinFET with Improved Memory Window

We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time.
Bae, Hagyoul, Park, Seohyeon, Yoo, Jaewook, Kim, Bongjoong, Song, Hyeojun, Park, Minah, Lim, Seongbin, Heo, Keun, Lee, Hongseung, Kim, Soyeon, Ye, Peide D.   +10 more
core  

The cylindrical devices with tunable positive, infinite, and negative capacitance for dynamic random access memory. [PDF]

Nat Commun
Park HW, Koo WT, Suh DI, Seo J, Sriboriboon P, Kim Y, Byun S, Kim Y, Kim JY, Ryu SW, Jeon H, Im KV, Lee G, Youn T, Lee S, Yi J, Cha SY, Hwang CS.   +17 more
europepmc   +1 more source

Malignancy Risk after Ophthalmic Herpes Infection within a Diverse United States Cohort. [PDF]

Ophthalmology
Mihalache A, Huang RS, Popovic MM, Chan CC.   +3 more
europepmc   +1 more source

The Coupling of Ferroelectric Polarization and Oxygen Vacancy Migration Enables Electrically Controlled Thermal Memories. [PDF]

Adv Mater
Barneo D, Royo M, Ramos R, Carrete J, Romero-Bernad H, Jiménez R, Leborán V, Magén C, Varela-Domínguez N, Algueró M, Rurali R, Pardo JA, Rivadulla F, Langenberg E.   +13 more
europepmc   +1 more source

Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors. [PDF]

ACS Appl Mater Interfaces
Das A, Paul A, Tewari M, Lou ZF, Chang YT, Senapati A, Kumar G, Raffel Y, Useinov A, Tumilty N, Wu TL, Lashkare S, Agarwal T, Lee MH, De S.   +14 more
europepmc   +1 more source

Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]

ACS Nano
Das A, Senapati A, Kumar G, Lou ZF, Müller J, Maskeen JS, Chang YT, Tewari M, Agarwal A, Paul A, Raffel Y, Maikap S, Kao KH, Agarwal T, Lashkare S, Lu D, Larrieu G, Lee MH, De S.   +18 more
europepmc   +1 more source

Approaching theoretical polarization limit in HfZrO2/HfLaO2 multilayers. [PDF]

Nat Commun
Shi S, Xi H, Su H, Sawyerr F, Liu Z, Zhang Z, Huangfu G, Niu J, Sun Y, Yang P, Gong X, Chen W, Tsymbal EY, Yan X, Tian H, Cao T, Chen J.   +16 more
europepmc   +1 more source