Results 121 to 130 of about 3,700 (228)

Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications

Advanced Physics Research, Volume 5, Issue 9, September 2026.
Ferroelectric field‐effect transistors (FeFETs) are advancing beyond conventional memory transistors into multifunctional hardware platforms enabled by emerging ferroelectric materials, scalable architectures, and neuromorphic/optoelectronic functionalities. Through HfO2‐based, two‐dimensional, and organic ferroelectrics, FeFETs achieve CMOS‐compatible
Hyeseoung Lee, Seungjun Lee, Jung‐Kyu Lee, Sungjun Kim   +3 more
wiley   +1 more source

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Journal of Materiomics
Hf0.5Zr0.5O2 (HZO) ferroelectric thin films have gained significant attention for the development of next-generation ferroelectric memories by complementary-metal-oxide semiconductor (CMOS) back-end-of-line (BEOL) processing, due to their relatively low ...
Changfan Ju, Binjian Zeng, Ziqi Luo, Zhibin Yang, Puqi Hao, Luocheng Liao, Qijun Yang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, Min Liao   +10 more
doaj   +1 more source

Bioinspired Crossmodal Tactile Sensory Nerve for High‐Accurate Object Recognition

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 5, September 2026.
An artificial crossmodal sensory neuron system (ACSNS) that combines a complementary memristor with high‐sensitivity pressure–temperature bimodal sensors, which integrate tactile perception, information storage, and neuromorphic computing. With the aid of machine learning, this ACSNS presents an improved accuracy of 96.67% in recognizing temperatures ...
Delu Chen, Yuetong Han, Xiaodong Wang, Wanli Cheng, Jianjie He, Xing Li, Yoshifumi Oshima, Chongxin Shan, Shaobo Cheng   +8 more
wiley   +1 more source

Large ferroelectric polarization and high dielectric constant in HfO2-based thin films via Hf0.5Zr0.5O2/ZrO2 nanobilayer engineering

Journal of Materiomics
HfO2-based ferroelectric films have been extensively explored and utilized in the field of non-volatile memory and electrical programmability. However, the trade-off between ferroelectric polarization and dielectric constant in HfO2 has limited the ...
Lei Liu, Chengfeng Jiang, Xi Yuan, Yan Zhang, Haiyan Chen, Dou Zhang   +5 more
doaj   +1 more source

Fabrication of ferroelectric gate thin film transistors using CSD Y-HZO and sputtered HZO with sputtered ITO channel

JSAP Annual Meetings Extended Abstracts, 2021
Mohit, Mohit, Migita, Shinji, Ota, Hiroyuki, Morita, Yukinori, Tokumitsu, Eisuke   +4 more
openaire   +1 more source

Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration

Interdisciplinary Materials, Volume 5, Issue 5, Page 749-771, September 2026.
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu, Xichen Tang, Wenhui Shi, Yunrui Xiu, Huimin Mao, Ye Tao, Xiaoning Zhao, Ya Lin, Zhongqiang Wang, Haiyang Xu, Yichun Liu   +10 more
wiley   +1 more source

Robust Antiferroelectric Response in the Pbca Phase of Hafnium Zirconium Oxide via Aluminum Substitution

Journal of the American Ceramic Society, Volume 109, Issue 9, September 2026.
ABSTRACT Hafnium zirconium oxide (HZO) has attracted attention for applications in nonvolatile memory and energy harvesting devices. However, it faces practical challenges such as insufficient endurance. One promising strategy to address this limitation is the utilization of antiferroelectric (AFE) behavior in HZO‐based materials. Previous studies have
Yong Kyu Choi, MinChul Kang, Tinsae Alem, Nicolas K. Lam, Andrea L. Watson, Kory Burns, Stephen J. McDonnell, Lin Zhou, Jon F. Ihlefeld   +8 more
wiley   +1 more source

Inhibiting the imprint effect of the TiN/HZO/TiN ferroelectric capacitor by introducing a protective HfO2 layer

Interfacial differences between the Hf0.5Zr0.5O2 (HZO) and the top/bottom electrodes caused by the process sequence could lead to the imprint effect of the TiN/HZO/TiN ferroelectric capacitor, which leads to serious reliability problems. In this article,
Shihao Yu, Haijun Liu, Xiaopeng Luo, Peng Yang, Zhenyuan Sun, Sen Liu, Yefan Zhang   +6 more
core   +1 more source

Hutchinson’s sign complicated by bilateral multiple cranial neuropathies and cerebral infarctions: a case report

Frontiers in Medicine
Varicella-zoster virus (VZV) infection is associated with serious complications, including cranial vasculopathy and herpes zoster ophthalmicus (HZO). Hutchinson’s sign, characterized by VZV lesions on the tip, dorsum, and root of the nose, serves as a ...
Zhongzheng Chang, Zhongzheng Chang, Ye Zhang, Ye Zhang, Jianwen Li, Jianwen Li, Cheng Zhang, Xiaolei Zheng, Shunliang Xu, Hui Yang, Zhaohong Xie   +10 more
doaj   +1 more source

Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity

Advanced Electronic Materials
HfO2/ZrO2 (HZO)‐based capacitive structures have attracted wide interest across the semiconductor industry, as large ferroelectricity is attainable in ultrathin poly‐crystalline films using materials that are already compatible with Si‐CMOS fabrication ...
Oscar Kaatranen, Patrik Eskelinen, Sampo Inkinen, Olli‐Pekka Kilpi, Karl‐Magnus Persson   +4 more
doaj   +1 more source