Results 121 to 130 of about 3,083 (223)

Fabrication of ferroelectric gate thin film transistors using CSD Y-HZO and sputtered HZO with sputtered ITO channel

JSAP Annual Meetings Extended Abstracts, 2021
Mohit, Mohit, Migita, Shinji, Ota, Hiroyuki, Morita, Yukinori, Tokumitsu, Eisuke   +4 more
openaire   +1 more source

Large ferroelectric polarization and high dielectric constant in HfO2-based thin films via Hf0.5Zr0.5O2/ZrO2 nanobilayer engineering

Journal of Materiomics
HfO2-based ferroelectric films have been extensively explored and utilized in the field of non-volatile memory and electrical programmability. However, the trade-off between ferroelectric polarization and dielectric constant in HfO2 has limited the ...
Lei Liu, Chengfeng Jiang, Xi Yuan, Yan Zhang, Haiyan Chen, Dou Zhang   +5 more
doaj   +1 more source

Lorentzian Switching Dynamics in HZO-Based FeMEMS Synapses for Neuromorphic Weight Storage

Nano Letters
19 pages, 5 ...
Shubham Jadhav, Kaustav Roy, Luis Marcelo Amaro, Thejas Basavarajappa, Madhav Ramesh, Saif Siddique, Judy J. Cha, Debdeep Jena, Huili Grace Xing, Amit Lal   +9 more
openaire   +2 more sources

Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity

Advanced Electronic Materials
HfO2/ZrO2 (HZO)‐based capacitive structures have attracted wide interest across the semiconductor industry, as large ferroelectricity is attainable in ultrathin poly‐crystalline films using materials that are already compatible with Si‐CMOS fabrication ...
Oscar Kaatranen, Patrik Eskelinen, Sampo Inkinen, Olli‐Pekka Kilpi, Karl‐Magnus Persson   +4 more
doaj   +1 more source

Small Signal Capacitance in Ferroelectric HZO: Mechanisms and Physical Insights

This study presents a theoretical investigation of the physical mechanisms governing small signal capacitance in ferroelectrics, focusing on Hafnium Zirconium Oxide. Utilizing a time-dependent Ginzburg Landau formalism-based 2D multi-grain phase-field simulation framework, we simulate the capacitance of metal-ferroelectric-insulator-metal (MFIM ...
Koduru, Revanth, Saha, Atanu K., Frank, Martin M., Gupta, Sumeet K.   +3 more
openaire   +2 more sources

Al-Doped HZO: A BEoL compatible Ferroelectric Material for Automotive-Grade Memory

Hafnium-zirconium oxide (HZO) is a promising ferroelectric (FE) material for non-volatile memories (NVMs) and compute-in-memory (CiM) applications.
Thiem, Steffen, Sünbül, Ayse, Viegas, Alison Erlene, Barbot, Justine, Bernert, Kerstin, Lehninger, David, Kämpfe, Thomas, Lederer, Maximilian, Seidel, Konrad, Mähne, Hannes   +9 more
core   +1 more source

Achieving Morphotropic Phase Boundary at Extremely Low-Temperature (200 °C) in HZO (>10 nm) Films Using Microwave Annealing

Thick Hafnium-Zirconium oxide (HZO) films (>10 nm) near morphotropic phase boundary (MPB) are promising for high-k dielectrics in display driving devices and susceptible piezoelectric and temperature sensors.
Shin, Hunbeom, Jeon, Sanghun, Jung, Taeseung, Ahn, Jinho   +3 more
core   +1 more source

Engineering Ferroelectric HZO With n⁺-Si/Ge Substrates Achieving High 2P_r=84 μC/cm² and Endurance >1E11

Metal-Ferroelectric-Metal (MFM) devices possessing high remanent polarizations ( $2P_{r}$ ) of 84 and $73~\mu $ C/cm2 are demonstrated with nearly epitaxially grown Hf0.5Zr0.5O2 (HZO) films on (001) n+-Si(3E19/cm $^{3}$ ) and n+-Ge(3E20/cm $^{3 ...
C. W. Liu, Zefu Zhao, Yun-Wen Chen, Yu-Rui Chen   +3 more
core   +1 more source

Magneto-optical investigation of HZO/Co capacitors for electrical control of the magnetic state [PDF]

LAUREA MAGISTRALEQuesto lavoro di tesi riguarda lo sviluppo, la caratterizzazione e l’ottimizzazione di un sistema di rilevamento micro-MOKE ad elevata sensibilità spaziale, che consente di effettuare caratterizzazioni magnetiche di film sottili e ...
Mugnano, Edoardo
core  

Herpes Zoster Ophthalmicus Complicated by Optic Neuritis: Diagnostic and Therapeutic Challenges. [PDF]

Cureus
Meghana NR, Sundareswaran G, Bhimanadham VM, Balakrishnan N.   +3 more
europepmc   +1 more source