Results 101 to 110 of about 3,083 (223)

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source

Herpes Zoster Ophthalmicus: Presentation, Complications, Treatment, and Prevention

Infectious Diseases and Therapy
Herpes zoster (HZ) is caused by reactivation of latent infection of varicella zoster virus (VZV) in sensory (cranial, dorsal root) ganglia. Major risk factors for HZ are increasing age and immunosuppression.
John Litt, Anthony L. Cunningham, Francisco Arnalich-Montiel, Raunak Parikh   +3 more
doaj   +1 more source

Deep Sight of Temperature‐Dependent Wake‐Up Effect of Hf0.5Zr0.5O2 Capacitors and Characterization

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
ABSTRACT Doped HfO2 ferroelectrics have attracted significant attention owing to their compatibility with CMOS processes in memory applications. The evolution of phases in doped HfO2 films during the wake‐up process remains a subject of ongoing interest.
Zichong Zhang, Rui Su, Wenxi Zhou, Xiaolong Jing, Tonghui Lin, Yifan Yang, Bobo Tian, Xiangshui Miao, Xingsheng Wang   +8 more
wiley   +1 more source

Crystallographic Analysis of a Nonvolatile HZO Phase Shifter Integrated on a Si3N4 Waveguide

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
The nonvolatile resonance shift of an in‐plane HZO phase shifter integrated on a Si3N4 ring resonator is demonstrated through optical measurements under lateral bias. Combining 4D‐STEM with DFT simulations reveals phase redistribution and strain‐induced index changes as the microscopic origin of a nonvolatile photonic modulation.
Minsik Kong, Min Kang, Chanwoo Jeong, Kyuho Kim, Sunkyu Yu, Soo‐Yeon Lee   +5 more
wiley   +1 more source

Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory

Advanced Science
HfO2‐based ferroelectric devices have garnered lots of attention in embedded memory due to its exceptional complementary metal oxide semiconductor (CMOS) compatibility as well as sub‐10 nm scalability.
Yinchi Liu, Jiajia Tao, Xiaoyu Dou, Kangli Xu, Yuchun Li, Handong Zhu, Hongliang Lu, Yanxi Li, Chi Liu, Jiezhi Chen, Lin Chen, Shijin Ding, Jixuan Wu, Wenjun Liu   +13 more
doaj   +1 more source

Guillain‐Barré Syndrome Following Herpes Zoster Ophthalmicus: A Rare Case of Acute Motor Axonal Neuropathy

Clinical Case Reports, Volume 14, Issue 6, June 2026.
ABSTRACT Herpes zoster ophthalmicus (HZO) refers to reactivation of varicella–zoster virus involving the ophthalmic division of the trigeminal nerve. Guillain‐Barré syndrome (GBS) has been infrequently reported following herpes zoster infection, and its occurrence after HZO is particularly uncommon.
Asad Ullah Khan, Moeez Ahmad Saeed, Ali Azmat, Rehman Khan, Nadeem Yousaf, Talha Khalid, Kashaf Imtiaz, Ali Gohar, Muhammad Husnain Ahmad   +8 more
wiley   +1 more source

Inhibiting the imprint effect of the TiN/HZO/TiN ferroelectric capacitor by introducing a protective HfO2 layer

Interfacial differences between the Hf0.5Zr0.5O2 (HZO) and the top/bottom electrodes caused by the process sequence could lead to the imprint effect of the TiN/HZO/TiN ferroelectric capacitor, which leads to serious reliability problems. In this article,
Shihao Yu, Haijun Liu, Xiaopeng Luo, Peng Yang, Zhenyuan Sun, Sen Liu, Yefan Zhang   +6 more
core   +1 more source

Impact of TiO2, ZnO, and Ag nanoparticles on anammox activity in enriched river Nile sediment cultures: unveiling differential effects and environmental implications

BMC Microbiology
Background The increasing use of nanoparticles (NPs) necessitates investigation of their impact on wastewater treatment processes, particularly anammox, a critical biological nitrogen removal pathway.
Mohamed A. Abd EL-Aziz, Ali M. Saeed, Mohamed K. Ibrahim, Wael S. El-Sayed   +3 more
doaj   +1 more source

COFFEE: A Carbon-Modeling and Optimization Framework for HZO-based FeFET eNVMs

CoRR
Information and communication technologies account for a growing portion of global environmental impacts. While emerging technologies, such as emerging non-volatile memories (eNVM), offer a promising solution to energy efficient computing, their end-to-end footprint is not well understood. Understanding the environmental impact of hardware systems over
Hongbang Wu, Xuesi Chen, Shubham Jadhav, Amit Lal, Lillian Pentecost, Udit Gupta 0001   +5 more
openaire   +2 more sources