Results 71 to 80 of about 3,700 (228)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes

Journal of Materiomics
This study clarifies the influence of single-layer (TiN, HfN, W) and bi-layer (HfN/TiN, W/TiN) bottom electrodes (BEs) on the ferroelectric performance and reliability of the 10-nm-thick Hf0.5Zr0.5O2 (HZO) thin films.
Han Sol Park, Joong Chan Shin, Kyung Do Kim, Seong Jae Shin, Jae Hee Song, Seung Kyu Ryoo, In Soo Lee, Suk Hyun Lee, Hyunwoo Nam, Cheol Seong Hwang   +9 more
doaj   +1 more source

Ferroionic Electrostatic Landscapes Enabling Wireless Energy Harvesting, Storage, and Sensing

Advanced Electronic Materials, EarlyView.
By integrating experiments and electrostatic field simulations, we show that long‐range wireless coupling in Li‐based ferroionics devices emerges from the cooperative interaction between ionic migration and electronic polarization. This coupling sustains self‐polarized electrostatic fields across centimeter‐scale air gaps without external bias or ...
M. Helena Braga, Beatriz M. Gomes, António B. Vale, Beatriz A. Maia, Ilídio B. Costa, Filipa Braz, Jorge C. Ribeiro, João C. Ribeiro   +7 more
wiley   +1 more source

Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions

JPhys Materials
Herein, we describe a comparative study of the ferroelectric properties of epitaxial Hf _0.5 Zr _0.5 O _2 films grown on La _0.67 Sr _0.33 MnO _3 /SrTiO _3 (100) and La _0.67 Sr _0.33 MnO _3 /DyScO _3 (110) across a temperature range of 32–298 K for the ...
J W Adkins, S Kumari, T Gage, I Fina, F Sánchez   +4 more
doaj   +1 more source

Texture modulation of ferroelectric Hf0.5Zr0.5O2 thin films by engineering the polymorphism and texture of tungsten electrodes

Journal of Materiomics
This study proposes a novel approach to achieving highly reliable, low-voltage polarization switching of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films using polymorph- and orientation-controlled W electrodes ((111)-textured α-W and (200)-textured β-W) by ...
Kun Yang, Hyun Woo Jeong, Jaewook Lee, Yong Hyeon Cho, Ju Yong Park, Hyojun Choi, Young Yong Kim, Younghwan Lee, Yunseok Kim, Min Hyuk Park   +9 more
doaj   +1 more source

MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications

AIP Advances, 2020
Recently, hafnium oxide (HfO2)-based ferroelectric materials have achieved phenomenal success in next-generation nonvolatile memory applications.
Ming-Yang Cha, Hao Liu, Tian-Yu Wang, Lin Chen, Hao Zhu, Li Ji, Qing-Qing Sun, David Wei Zhang   +7 more
doaj   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET

, 2022
Art.222903, 6 S.The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative.
Büttner, T., Polakowski, P., Steinke, P., Kämpfe, T., Pätzold, B., Hanisch, N., Czernohorsky, M., Ali, T., Hoffmann, R., Riedel, S., Seidel, K., Rudolph, M., Calvo, J., Löhr, D., Müller, J., Kühnel, K., Thrun, X.   +16 more
core   +1 more source

Polarization current-based reservoir computing utilizing an anti-ferroelectric-like HfZrO2 capacitor

APL Machine Learning
We have experimentally demonstrated the physical reservoir computing by employing the polarization switching current dynamics of an Hf1−xZrxO2 (HZO)-based metal/ferroelectric/metal capacitor with Zr content x = 0, 0.5, and 0.75.
Shin-Yi Min, Eishin Nako, Ryosho Nakane, Mitsuru Takenaka, Kasidit Toprasertpong, Shinichi Takagi   +5 more
doaj   +1 more source

Strategies and Challenges in Memristor‐Selector Integration for High‐Density Memory and Compute‐in‐Memory Systems

Advanced Electronic Materials, EarlyView.
Selector integration enables scalable memristor crossbar arrays by suppressing sneak‐path currents and improving array selectivity. This review summarizes integration strategies, device requirements, challenges, and opportunities for high‐density memory, compute‐in‐memory, and neuromorphic computing systems.
Zohreh Hajiabadi, David B. Thomas, Harold M. H. Chong, Firman M. Simanjuntak   +3 more
wiley   +1 more source