Results 71 to 80 of about 3,083 (223)

Overall cumulative risks of complications in the HZO, HZN, and HZT cohorts.

, 2016
Overall cumulative risks of complications in the HZO, HZN, and HZT cohorts.
Meng-Yin Lin (2180896), Sing-Huh Liu (3202980), Che-Chen Lin (304866), Wen-Yi Wang (3202977), I-Jong Wang (223289)   +4 more
core   +1 more source

Temperature‐Graded Deposition of HfZrOx for Ferroelectric Capacitors With Enhanced Polarization, Reliability, and Switching

Advanced Electronic Materials, EarlyView.
Temperature‐graded ALD of HfZrOx (HZO) enables strain‐enhanced stabilization of the ferroelectric o‐phase, achieving simultaneously high polarization, fast switching, and robust endurance in BEOL‐compatible FeCAPs. ABSTRACT Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors hold great promise for next‐generation nonvolatile memory and logic applications ...
Sheng‐Yen Zheng, Yin‐Chen Sun, Yu‐Cheng Kao, Hsin‐Yu Hsu, Pin‐Jiun Wu, Yung‐Hsien Wu   +5 more
wiley   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Bias dependent band alignment in Ga2O3 ferroelectric interface by operando HAXPES

Scientific Reports
We present a fundamental study of the band alignment at the interface of HfZrO4 (HZO) with Ge-doped Ga2O3. Ge is an alternative n-type dopant for the wide band gap Ga2O3 due to its shallow donor level and favorable MBE growth conditions.
Anthony Boucly, Tyson C. Back, Thaddeus J. Asel, Brenton A. Noesges, Amber N. Reed, Sabyasachi Ganguli, Jonathan Ludwick, Cynthia Bowers, Krishnamurthy Mahalingam, Sylvia Matzen, Nick Barrett   +10 more
doaj   +1 more source

Enhanced Polarization Switching in HfZrO₂ MFS FeFET Using WO_x Interlayer

IEEE Journal of the Electron Devices Society
We demonstrate that the memory window (MW) of HfZrO2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with an InZnO channel/HZO/W gate stack can be noticeably widened to over 2 V by introducing an amorphous WO2.7 interlayer (IL) into the gate ...
Eunjin Kim, Hyoungjin Park, Jiae Jeong, Jiyong Woo   +3 more
doaj   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

Morphotropic Phase Boundary Engineering via Heterostructure for Low‐Voltage Ferroelectric Capacitors

Advanced Electronic Materials, EarlyView.
Morphotropic phase boundary engineering in HfxZr1‐xO2 heterostructures enables low‐voltage and fast ferroelectric switching. This layer promotes polarization switching near 0 V, resulting in ≈25% reduction in coercive voltage and enhanced capacitance. This heterostructure design provides a practical route for energy‐efficient ferroelectric capacitors ...
Changhyeon Han, Been Kwak, Ki‐Ryun Kwon, Jeong‐Han Kim, Jiyong Yim, Hyun‐Min Kim, Sangeun Kwak, Daewoong Kwon   +7 more
wiley   +1 more source

Isolated optic neuritis with a concurrent abnormal trigeminal nucleus on imaging: case report of a rare complication of herpes zoster ophthalmicus

BMC Neurology, 2018
Background Herpes zoster ophthalmicus (HZO) is an inflammation related to reactivation of the latent varicella zoster virus (VZV), involving the ophthalmic branch of the trigeminal nerve. Optic neuritis (ON), a rare ocular complication following HZO, has
Kavin Vanikieti, Anuchit Poonyathalang, Panitha Jindahra, Piyaphon Cheecharoen, Patchalin Patputtipong, Tanyatuth Padungkiatsagul   +5 more
doaj   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes

Journal of Materiomics
This study clarifies the influence of single-layer (TiN, HfN, W) and bi-layer (HfN/TiN, W/TiN) bottom electrodes (BEs) on the ferroelectric performance and reliability of the 10-nm-thick Hf0.5Zr0.5O2 (HZO) thin films.
Han Sol Park, Joong Chan Shin, Kyung Do Kim, Seong Jae Shin, Jae Hee Song, Seung Kyu Ryoo, In Soo Lee, Suk Hyun Lee, Hyunwoo Nam, Cheol Seong Hwang   +9 more
doaj   +1 more source