Results 11 to 20 of about 3,083 (223)
Plasma-enhanced atomic layer deposition (ALD) is a common method for fabricating Hf0.5Zr0.5O2 (HZO) ferroelectric thin films that can be performed using direct-plasma (DP) and remote-plasma (RP) methods.
So-Won Kim, Hee Chul Lee
exaly +2 more sources
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
Non-volatile cryogenic memories are crucial for realizing energy-efficient and scaled quantum computing systems. In this letter, we evaluate the cryogenic performance of an HZO-based ferroelectric capacitor (FeCAP) with a compound semiconductor (InAs) as
Ram, Mamidala Karthik, +3 more
core +3 more sources
HZO-based FerroNEMS MAC for in-memory computing
This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of a 250×30 μm2 unimorph cantilever with 20-nm-thick ferroelectric HZO on 1 μm SiO2.
Jadhav, Shubham +6 more
openaire +2 more sources
Chronic and Recurrent Herpes Zoster Ophthalmicus
Background and Objectives: This study sought to investigate the natural course, the chronicity and recurrence rate, and the risk factors of chronic and recurrent herpes zoster ophthalmicus (HZO).
Soo Min Lee +6 more
doaj +1 more source
RF-Characterization of HZO Thin Film Varactors [PDF]
A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz.
Sukhrob Abdulazhanov +9 more
openaire +2 more sources
Study of Imprint dynamics in CMOS compatible HZO ferroelectric capacitors
International audienceThe discovery of the ferroelectric orthorhombic phase in doped HfO2 gave a major boost to the interest for integrated ferroelectric oxides in the CMOS industry [1].
Segantini, Greta +5 more
core +3 more sources
Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process.
Da Hee Hong +6 more
doaj +1 more source
Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology.
Greta Segantini +11 more
doaj +1 more source
A Rare Complication of Herpes Zoster Ophthalmicus (HZO)
Retrobulbar optic neuritis is a rare complication of herpes zoster ophthalmicus (HZO). We report a case of a 27-year-old man who presented with a progressive left blurring of vision for one week. A history of vesicular rashes in the left trigeminal nerve area preceded his condition.
Phang, Daniel Sen Kai +4 more
openaire +2 more sources
Tight junctions (TJs) regulate the transit of ions and molecules through the paracellular pathway in epithelial cells. Zonula occludens 2 (ZO-2) is a cytoplasmic TJ protein.
Misael Cano-Cortina +4 more
doaj +1 more source

