Results 11 to 20 of about 3,700 (228)

Polarization Switching Kinetics in Thin Ferroelectric HZO Films

Nanomaterials, 2022
Ferroelectric polycrystalline HfO2 thin films are the most promising material for the implementation of novel non-volatile ferroelectric memories because of their attractive properties, such as compatibility with modern Si technology, perfect scalability, low power consumption and high endurance.
Ekaterina Kondratyuk, Anastasia Chouprik
openaire   +4 more sources

On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes

Nanomaterials, 2022
Despite the great potential of Hf0.5Zr0.5O2 (HZO) ferroelectrics, reliability issues, such as wake-up, fatigue, endurance limitations, imprint and retention loss, impede the implementation of HZO to nonvolatile memory devices. Herein, a study of the reliability properties in HZO-based stacks with the conventional TiN top electrode and Ru electrode ...
Roman R. Khakimov, Anna G. Chernikova, Aleksandra A. Koroleva, Andrey M. Markeev   +3 more
openaire   +4 more sources

COFFEE: A Carbon-Modeling and Optimization Framework for HZO-based FeFET eNVMs

2026 Design, Automation & Test in Europe Conference (DATE)
Information and communication technologies account for a growing portion of global environmental impacts. While emerging technologies, such as emerging non-volatile memories (eNVM), offer a promising solution to energy efficient computing, their end-to-end footprint is not well understood. Understanding the environmental impact of hardware systems over
Hongbang Wu, Xuesi Chen, Shubham Jadhav, Amit Lal, Lillian Pentecost, Udit Gupta 0001   +5 more
openaire   +3 more sources

Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced Ferroelectricity

, 2022
International audienceThe synthesis of sub-8 nm HZO films that exhibit robust ferroelectricity is a challenging task. Interface engineering is a promising method to improve the electrical performances and the scalability of HZO-based devices.
Segantini, Greta, Deleruyelle, Damien, Rojo Romeo, Pedro, Cañero Infante, Ingrid, Sriram, Sharath, Barhoumi, Rabei, Baboux, Nicolas, Bugnet, Mathieu, Nirantar, Shruti, Manchon, Benoit, Vilquin, Bertrand   +10 more
core   +6 more sources

Wake-Up and Fatigue under Electrical Cycling in HfO₂-Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices. [PDF]

Adv Sci (Weinh)
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Kim H, Lee S, Choi H, Park M, Cho H, Park MH, Kim Y.   +6 more
europepmc   +2 more sources

Epitaxial ferroelectric Hf0.5Zr0.5O2 (HZO): Growth, Switching & Fatigue behavior [PDF]

, 2023
In recent years, the escalating demand for computing has necessitated the discovery of novel materials to power the next generation of logic and memory devices.
Zhang, Zimeng
core   +1 more source

An Efficient Biological Codon Recognition Reservoir Computing System Based on Low‐Energy Epitaxial Hf0.52Zr0.48O2 Ferroelectric Memristors [PDF]

Advanced science
This work reports on epitaxially grown Hf0.52Zr0.48O2 ferroelectric memristors with high stability (high durability exceeding 108 cycles and a retention time exceeding 104 s for 16 states) and ultra‐low operating energy consumption (∼121 fJ). A memristor array‐based reservoir computing system is constructed and applied for the first time in the field ...
Liu Y, Xu J, Jia Y, Wang W, Zhang W, Yang B, Yan X.   +6 more
europepmc   +2 more sources

Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf_1−xZr_xO₂ Thin Films via Atomic Layer Deposition

Nanomaterials, 2023
Hf1−xZrxO2 (HZO) thin films are versatile materials suitable for advanced ferroelectric semiconductor devices. Previous studies have shown that the ferroelectricity of HZO thin films can be stabilized by doping them with group III elements at low ...
Youkyoung Oh, Seung Won Lee, Jeong-Hun Choi, Seung-Eon Ahn, Hyo-Bae Kim, Ji-Hoon Ahn   +5 more
doaj   +1 more source

Multi‐Modal Low‐Power Adaptive Braille Recognition System Based on Hf0.3Zr0.7O2 Memristor [PDF]

Advanced science
A multimodal adaptive perception system based on HZO ferroelectric memristor realizes efficient Braille digit recognition via reservoir computing. It delivers high recognition accuracy with ultralow‑energy analog computation, offering a promising hardware solution for environment‑robust neuromorphic assistive devices for visually impaired users ...
Xu J, Wang J, Li Z, Sun W, Wang J, Lu Q, Liu W, Liu X, Sun Y, Yan X.   +9 more
europepmc   +2 more sources

Controlling Resistance Switching Performances of Hf0.5Zr0.5O2 Films by Substrate Stress and Potential in Neuromorphic Computing

Advanced Intelligent Systems, 2022
Ferroelectric Hf0.5Zr0.5O2 (HZO) thin films have attracted wide attention in terms of potential applications of nonvolatile ferroelectric memories. However, the effect of strain on the resistance switching characteristics of the ferroelectric HZO thin ...
Zuoao Xiao, Herng Yau Yoong, Jing Cao, Zhen Zhao, Jingsheng Chen, Xiaobing Yan   +5 more
doaj   +1 more source