Results 31 to 40 of about 2,265 (156)
Communications Physics, 2021 The ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics. Here,
Jasper Bizindavyi +3 more
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MoTe2 on ferroelectric single-crystal substrate in the dual-gate field-effect transistor operation
, 2021 © 2021 Korean Physical Society. An exfoliated MoTe2 flake in contact with a ferroelectric single-crystal substrate was studied to examine its charge carrier modulation by neighboring ferroelectric polarization.
Kang, Haeyong +4 more
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Ferroelectric Field Effect Transistor for Memory and Switch Applications [PDF]
, 2011 Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid ...
Salvatore, Giovanni Antonio
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Ferroelectric-gate field effect transistor memories: device physics and applications
, 2020 This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory
Sakai, Shigeki +4 more
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IEEE Journal of the Electron Devices Society, 2022 We investigated the ferroelectric properties of self-induced HfGeOx in a HfO2 film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric ...
Chong-Jhe Sun +7 more
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Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node
IEEE Journal of the Electron Devices Society, 2021 The random variation sources have a significant influence on the performance of ferroelectric field-effect transistor (FeFET). In this work, comparative analysis on the process variation induced variability of FeFET towards a 7 nm technology node has ...
Gihun Choe, Shimeng Yu
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Review of ferroelectric field‐effect transistors for three‐dimensional storage applications
Nano Select, 2021 The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market.
Hyeon Woo Park +2 more
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Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor
, 2003 Nonvolatile operation of ferroelectric gate field-effect transistors in silicon carbide (SiC) is demonstrated. Depletion mode transistors have been realized by forming a Pb(Zr0.52Ti0.48)O-3/Al2O3 gate stack on n-type epitaxial channel layer and p-type ...
Koo, S. M. +9 more
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A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric
Solids, 2023 This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the ...
Paul Jacob +8 more
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Ferroelectric Relaxation Oscillators and Spiking Neurons
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 We report the experimental demonstration of the ferroelectric field-effect transistor (FEFET)-based relaxation oscillators and spiking neurons. The ferroelectric relaxation oscillators and the ferroelectric spiking neurons, harnessing the abrupt ...
Zheng Wang, Asif I. Khan
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