Results 51 to 60 of about 2,265 (156)

An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric

, 2014
We demonstrate the fabrication of an organic Ferroelectric Field Effect Transistor (FeFET) incorporating a ferroelectric gate dielectric made of nanostripes obtained by nanoimprinting poly(vinylidene fluoride-co-trifluoroethylene) over a layer of ...
Nysten, Bernard, Hu, Zhijun, Jonas, Alain M, Kassa, H.G., Marrani, A., Marrani, Alessio, Kassa, Hailu G, Breemen, A.J.J.M. van, van Breemen, Albert J. J. M., Gelinck, G.H., Jonas, A.M., Gelinck, G Gerwin, van Breemen, AJJM, Cai, Ronggang, Gelinck, Gerwin H., Kassa, Hailu Gebru, Hu, Z., Cai, R., Nysten, B., Jonas, Alain M.   +19 more
core   +1 more source

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Nano Convergence, 2018
Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope.
Eunah Ko, Jaemin Shin, Changhwan Shin
doaj   +1 more source

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Nanoscale Research Letters, 2020
Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance.
Siqing Zhang, Yan Liu, Jiuren Zhou, Meng Ma, Anyuan Gao, Binjie Zheng, Lingfei Li, Xin Su, Genquan Han, Jincheng Zhang, Yi Shi, Xiaomu Wang, Yue Hao   +12 more
doaj   +1 more source

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor

, 2018
The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single ...
Kang, H., Lee, S.-G., Yoojoo Yun, Dongseok Suh, Young Hee Lee, Yourack Lee, Nahee Park, Jeongmin Park, Lee, J.-H.   +8 more
core   +1 more source

Interface in a Ferroelectric Field-Effect Transistor

, 2023
Characterization of the composition and extension of the SiO$_2$/HfO$_2$ interface in the model systems Si-sub./SiO$_2$ (7.5 nm)/FE:HfO$_2$ (9.5 nm)/TiN (9 nm) for standard impurity concentrations and annealing temperatures (Si 3.6%, 1000 °C; Al 5.5 ...
Bugaev, Aleksandr V., Aleksandr V. Bugaev, Denis V. Danilov, Sergei S. Sakhonenkov, Elena O. Filatova, Filatova, Elena O., Aleksei S. Konashuk, Sakhonenkov, Sergei S., Konashuk, Aleksei, Danilov, Denis V.   +9 more
core   +1 more source

Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering

Nature Communications, 2023
The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore’s Law era. The close to metallic carrier density in
Yifei Hao, Xuegang Chen, Le Zhang, Myung-Geun Han, Wei Wang, Yue-Wen Fang, Hanghui Chen, Yimei Zhu, Xia Hong   +8 more
doaj   +1 more source

High‐performance P(VDF‐TrFE)/BaTiO3 nanocomposite based ferroelectric field effect transistor (FeFET) for memory and switching applications

Nano Select, 2021
The ferroelectric field effect transistor (FeFET) using Poly (vinylidene fluoride‐trifluoroethylene)/Barium titanate [P(VDF‐TrFE)/BaTiO3] polymer nanocomposite as dielectric layer, has been fabricated and characterized.
Uvais Valiyaneerilakkal, Subash Cherumannil Karumuthil, Kulwant Singh, Loksani Bhanuprakash, Rama Komaragiri, Soney Varghese   +5 more
doaj   +1 more source

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2022
A physics-based model and the corresponding simulation framework for the mobile-ionic field-effect transistor (MIFET) exhibiting the ferroelectric-like behaviors are innovatively proposed based on two-dimensional (2D) Poisson’s equation and non ...
Jiajia Chen, Huan Liu, Chengji Jin, Xiaole Jia, Xiao Yu, Yue Peng, Ran Cheng, Bing Chen, Yan Liu, Yue Hao, Genquan Han   +10 more
doaj   +1 more source

High-performance solution-processed polymer ferroelectric field-effect transistors [PDF]

, 2005
We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted ...
Tanase, C, Marsman, AW, De Leeuw, DM, Gelinck, Gerwin H., Gelinck, GH, Touwslager, Fred J., Blom, PWM, Naber, Ronald C.G., Touwslager, FJ, Setayesh, S, Naber, RCG, Marsman, Albert W.   +11 more
core   +2 more sources

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Nature Communications
The burgeoning interest in two-dimensional semiconductors stems from their potential as ultrathin platforms for next-generation transistors. Nonetheless, there persist formidable challenges in fully obtaining high-performance complementary logic ...
Guangdi Feng, Yifei Liu, Qiuxiang Zhu, Zhenyu Feng, Shengwen Luo, Cuijie Qin, Luqiu Chen, Yu Xu, Haonan Wang, Muhammad Zubair, Ke Qu, Chang Yang, Shenglan Hao, Fangyu Yue, Chungang Duan, Junhao Chu, Bobo Tian   +16 more
doaj   +1 more source