Results 61 to 70 of about 2,265 (156)

Large–Area Graphene Electrode for Ferroelectric Control of Pb(Mg1/3Nb2/3)O3–PbTiO3 Single Crystal

Advanced Electronic Materials, 2023
Large‐area monolayer graphene is utilized as a metallic electrode for a ferroelectric single‐crystal [Pb(Mg1/3Nb2/3)O3]m–[PbTiO3]n (PMNPT). Unlike conventional metal, whose properties remain unaffected by field‐induced charge carriers, graphene's unique ...
Gwanmu Lee, Moonyoung Jung, Yoojoo Yun, Hojin Kang, Nahee Park, Haeyong Kang, Dongseok Suh   +6 more
doaj   +1 more source

Thin film field-effect transistor with ZnO:Li ferroelectric channel

Journal of Advanced Dielectrics
An n-type channel transparent thin film field-effect transistor (FET) using a top-gate configuration on a sapphire substrate is presented. ZnO:Li film was used as a channel, and MgF2 film as a gate insulator.
Armen Poghosyan, Ruben Hovsepyan, Hrachya Mnatsakanyan   +2 more
doaj   +1 more source

HfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing

AIP Advances, 2020
Two-dimensional (2D) materials have gained huge attention due to their ultimate thinness that can help dominate the short channel effect caused by transistor miniaturization. Molybdenum disulphide (MoS2) is one of the most promising 2D materials that has
Md. Sherajul Islam, Shahrukh Sadman, A. S. M. Jannatul Islam, Jeongwon Park   +3 more
doaj   +1 more source

In‐Depth Atomic Mapping of Polarization Switching in a Ferroelectric Field‐Effect Transistor

, 2020
The ferroelectric control of a Mott transistor is a promising strategy for nonvolatile low-power electronics. Understanding the fundamental limits of the ferroelectric-field effect is challenging, as the relevant length scales are restricted to a few ...
Vistoli, Lorenzo, Lorenzo Vistoli, Zhu, Qiuxiang, Vincent Garcia, Bibes, M, Agnès Barthélémy, Xiaoyan Li, Barthélémy, Agnès, Stéphane Fusil, Fusil, Stéphane, Garcia, Vincent, Gloter, Alexandre, Manuel Bibes, Alexandre Gloter, Qiuxiang Zhu, Li, Xiaoyan   +15 more
core   +1 more source

Field-effect experiments on oxide superconductors thin films

, 2006
[ITALIANO] Negli ultimi anni la ricerca nell’ambito della fisica dello stato solido ha rivolto grande interesse allo studio delle proprietà dei sistemi fortemente correlati ed in particolare degli ossidi perovskitici dei metalli di transizione.
Prigiobbo, Antonio
core  

Strontium Bismuth Tantalate Based Ferroelectric Gate Field Effect Transistor with Yttrium Oxide as the Buffer Layer

, 1997
We report the first demonstration of an enhancement mode n-channel metal -ferroelectric-semiconductor field effect transistor (MFISFET) realized directly on silicon with yttrium oxide as the buffer layer.
Yong-Tae Kim, T. S. Kalkur, Myoung-Ho Lim   +2 more
core   +1 more source

Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization

, 2023
We propose a higher-κ non-hysteric ferroelectric field-effect transistor (FEFET) using reversible domain wall displacement. By separately stimulating reversible and irreversible domain walls, whose concepts have been experimentally suggested recently ...
Lee, Dong Hyun, Park, Min Hyuk, Shim, Joonsup, Kim, Sanghyeon, Kuk, Songhyeon, Han, Seungmin, Kim, Bong Ho, Han, Jae-Hoon   +7 more
core   +1 more source

An Organic Field-Effect Transistor with Programmable Polarity

, 2005
\u3cp\u3eA new type of organic field effect transistor (FET) consisting of an ambipolar semiconductor with a ferroelectric functionalized gate dielectric was presented.
Leeuw, D M De, Marsman, Albert W.,, Naber, Ronald C.G.,, Naber, R C G, Leeuw, Dago M. de,, Blom, PWM Paul, Marsman, Albert W, Gelinck, Gerwin H.,, Gelinck, G Gerwin, Blom, Paul W.M.,   +9 more
core   +2 more sources

Processing organic semiconductors

, 2010
PhDIn recent years, there has been a considerable interest in organic semiconducting materials due to their potential to enable, amongst other things, low-cost flexible opto-electronic applications, such as large-area integrated circuitry boards, light ...
Baklar, Mohammed Adnan
core  

A Van Der Waals Ferroelectric Schottky Junction Field-effect Transistor

Two-dimensional ferroelectric field-effect transistors hold great promise for next-generation electronics due to their scalability, low power operation, and non-volatile memory capabilities.
Zou, Lingrui, Zhang, Xixiang, Dong, Zexin, Wang, Zhongyi, He, Xin, Yu, Bin, Wang, Baoyu   +6 more
core   +1 more source