Results 1 to 10 of about 553 (192)
Nano Select, 2021 The ferroelectric field effect transistor (FeFET) using Poly (vinylidene fluoride‐trifluoroethylene)/Barium titanate [P(VDF‐TrFE)/BaTiO3] polymer nanocomposite as dielectric layer, has been fabricated and characterized.
Uvais Valiyaneerilakkal +5 more
doaj +4 more sources
A Compact Model of Ferroelectric Field-Effect Transistor [PDF]
IEEE Electron Device Letters, 2022 In this letter, we present a compact model of ferroelectric field-effect-transistor (FEFET). The model consists of a ferroelectric (FE) capacitor model and a Berkeley Short-channel IGFET Model (BSIM), a standard SPICE MOSFET model.
Chien-Ting Tung +2 more
exaly +2 more sources
Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET
Memories - Materials, Devices, Circuits and Systems, 2023 In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO2-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations.
Masud Rana Sk +10 more
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Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation
Crystals, 2022 The low storage density of ferroelectric thin film memory currently limits the further application of ferroelectric memory. Topologies based on controllable ferroelectric domain structures offer opportunities to develop microelectronic devices such as ...
Jing Huang +3 more
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Energy-Efficient Ferroelectric Field-Effect Transistor-Based Oscillators for Neuromorphic System Design [PDF]
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020 Neuromorphic or bioinspired computational platforms, as an alternative for von-Neumann structures, have benefitted from the excellent features of emerging technologies in order to emulate the behavior of the biological brain in an accurate and energy ...
Hossein Eslahi +2 more
doaj +2 more sources
Memories - Materials, Devices, Circuits and Systems, 2023 In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The devices under test were fabricated on 300 mm wafers at GlobalFoundries.
Yannick Raffel +10 more
doaj +2 more sources
Coupled ferroelectric-anisotropic optoelectronic synapse for polarization-sensitive neuromorphic vision [PDF]
Nature CommunicationsPolarization-sensitive photodetection and non-volatile memory are both vital for neuromorphic vision hardware but are rarely integrated within a single device.
Jiali Huo +8 more
doaj +2 more sources
Automated, physics-guided AI framework for asymmetry-aware ferroelectric compact models [PDF]
Scientific ReportsDespite rapid progress in HfO₂-based ferroelectrics, asymmetry-aware characterization and its reflection in compact models remain insufficiently explored.
Joonhan Kim +8 more
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FeFET-Based Computing-in-Memory Unit Circuit and Its Application [PDF]
NanomaterialsWith the increasing challenges facing silicon complementary metal oxide semiconductor (CMOS) technology, emerging non-volatile memory (NVM) has received extensive attention in overcoming the bottleneck.
Xiaojing Zha, Hao Ye
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Advanced Intelligent Systems, 2023 Harnessing multibit precision in nonvolatile memory (NVM)‐based synaptic core can accelerate multiply and accumulate (MAC) operation of deep neural network (DNN).
Vivek Parmar +17 more
doaj +2 more sources