Results 21 to 30 of about 15,744,307 (196)

Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network

Advanced Science, 2023
With the recently increasing prevalence of deep learning, both academia and industry exhibit substantial interest in neuromorphic computing, which mimics the functional and structural features of the human brain.
Wonjun Shin, Jiyong Im, Ryun‐Han Koo, Jaehyeon Kim, Ki‐Ryun Kwon, Dongseok Kwon, Jae‐Joon Kim, Jong‐Ho Lee, Daewoong Kwon   +8 more
doaj   +1 more source

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

, 2022
S.3769-3774We report the integration of a ferroelectric (FE) silicon-doped hafnium oxide material in ferroelectric field-effect transistor (FeFET) devices fabricated with an optimized interfacial layer in a gate-first scheme. The effect of increasing the
Büttner, T., Polakowski, P., Steinke, P., Zimmermann, K., Kämpfe, T., Pätzold, B., Czernohorsky, M., Ali, T., Hoffmann, R., Riedel, S., Seidel, K., Rudolph, M., Calvo, J., Löhr, D., Müller, J., Kühnel, K.   +15 more
core   +1 more source

Sub-Nanosecond Switching of Si:HfO₂ Ferroelectric Field-Effect Transistor

, 2023
The discovery of ferroelectric doped HfO2 enabled the emergence of scalable and CMOS-compatible ferroelectric field-effect transistor (FeFET) technology which has the potential to meet the growing need for fast, low-power, low-cost, and high-density ...
Halid Mulaosmanovic, Eilam Yalon (3992279), Sven Beyer, Or Levit, Stefan Dünkel, Mor Mordechai Dahan (14485160), Stefan Dünkel (9433462), Mor Mordechai Dahan, Halid Mulaosmanovic (3690826), Eilam Yalon, Or Levit (14485163), Sven Beyer (9433468)   +11 more
core   +1 more source

Non-volatile hybrid optical phase shifter driven by a ferroelectric transistor

, 2022
Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PIC. Non-volatile phase shifters which can retain information without a power supply, are highly desirable for low ...
Rui Tang (298719), Kouhei Watanabe (6560756), Shinichi Takagi (6410516), Masahiro Fujita (355423), Hanzhi Tang (14362041), Kasidit Toprasertpong (13141774), Mitsuru Takenaka (6410513)   +6 more
core   +1 more source

Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

IEEE Journal of the Electron Devices Society, 2020
We have fabricated and demonstrated ultrathin In-Ga-Zn-O (IGZO) channel ferroelectric HfO2 field effect transistor (FET) with memory operation. Ultrathin-body IGZO ferroelectric FET (FeFET) shows high mobility and nearly ideal subthreshold slop with ...
Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +6 more
doaj   +1 more source

An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric

, 2014
We demonstrate the fabrication of an organic Ferroelectric Field Effect Transistor (FeFET) incorporating a ferroelectric gate dielectric made of nanostripes obtained by nanoimprinting poly(vinylidene fluoride-co-trifluoroethylene) over a layer of ...
Kassa, H.G., Marrani, A., Hu, Z., Cai, R., Breemen, A.J.J.M. van, Nysten, B., Gelinck, G.H., Jonas, A.M.   +7 more
core   +2 more sources

2-Bit/Cell Operation of Hf_0.5Zr_0.5O₂ Based FeFET Memory Devices for NAND Applications

IEEE Journal of the Electron Devices Society, 2019
The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf0.5Zr0.5O2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics are observed for intermediate and saturated polarization states
Binjian Zeng, Min Liao, Qiangxiang Peng, Wenwu Xiao, Jiajia Liao, Shuaizhi Zheng, Yichun Zhou   +6 more
doaj   +1 more source

Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization

, 2023
We propose a higher-κ non-hysteric ferroelectric field-effect transistor (FEFET) using reversible domain wall displacement. By separately stimulating reversible and irreversible domain walls, whose concepts have been experimentally suggested recently ...
Lee, Dong Hyun, Park, Min Hyuk, Shim, Joonsup, Kim, Sanghyeon, Kuk, Songhyeon, Han, Seungmin, Kim, Bong Ho, Han, Jae-Hoon   +7 more
core   +1 more source

Brain-inspired ferroelectric Si nanowire synaptic device

APL Materials, 2021
We herein demonstrate a brain-inspired synaptic device using a poly(vinylidene fluoride) and trifluoroethylene (PVDF-TrFE)/silicon nanowire (Si NW) based ferroelectric field effect transistor (FeFET). The PVDF-TrFE/Si NW FeFET structure achieves reliable
M. Lee, W. Park, H. Son, J. Seo, O. Kwon, S. Oh, M. G. Hahm, U. J. Kim, B. Cho   +8 more
doaj   +1 more source

Ferroelectric Nanopillar Field-Effect Transistors: Quantum Transport Simulations Based on a Three-Dimensional Phase Field

, 2023
A ferroelectric field-effect transistor (FEFET) with a cylindrical ferroelectric (FE) nanopillar embedded in the gate oxide stack is proposed and investigated.
Yoon-Suk Kim, Hyeongu Lee, Mincheol Shin, Kim, Yoon-Suk, Lee, Hyeongu, Shin, Mincheol   +5 more
core   +1 more source