Results 1 to 10 of about 3,777 (297)

Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor

IEEE Journal of the Electron Devices Society, 2017
The negative capacitance (NC) of ferroelectric materials has paved the way for achieving sub-60-mV/decade switching feature in complementary metal-oxide-semiconductor (CMOS) field-effect transistors, by simply inserting a ferroelectric thin layer in the ...
Eunah Ko, Hyunjae Lee, Youngin Goh
exaly   +4 more sources

Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor [PDF]

Nano Convergence, 2020
In this work, the measured electrical characteristics of a fully depleted silicon-on-insulator (FDSOI) device and fin-shaped field-effect transistor (FinFET), whose gate electrode is connected in series to the bottom electrode of a ferroelectric ...
Chankeun Yoon, Seungjun Moon, Changhwan Shin   +2 more
doaj   +2 more sources

Investigation of frequency-dependent permittivity tunability of P(VDF-TrFE) metal-ferroelectric-metal capacitor

Results in Physics, 2019
We report on the tunability of the frequency-dependent permittivity of a metal-ferroelectric-metal (MFM) capacitor fabricated with P(VDF-TrFE), an organic ferroelectric material.
S.-W. Han, C.-H. Lee, H. Shin, J.-H. Lee, H.-Y. Cha   +4 more
doaj   +2 more sources

Dynamic leakage current compensation in ferroelectric thin-film capacitor structures [PDF]

Applied Physics Letters, 2005
We report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures.
René Meyer, Rainer Waser, Waser Rainer   +2 more
exaly   +2 more sources

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

IEEE Journal of the Electron Devices Society, 2022
A novel system-on-a-chip compatible one-transistor one-capacitor ferroelectric random-access memory array (1T1C FeRAM) based on ferroelectric Hf0.5Zr0.5O2 with a capacitor under bitline (CUB) structure was experimentally demonstrated.
Jun Okuno, Takafumi Kunihiro, Kenta Konishi, Monica Materano, Tarek Ali, Kati Kuehnel, Konrad Seidel, Thomas Mikolajick, Uwe Schroeder, Masanori Tsukamoto, Taku Umebayashi   +10 more
doaj   +2 more sources

Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Advanced Materials Interfaces, 2023
Further optimization of a typically reported ferroelectric capacitor comprised of a Hf0.5Zr0.5O2 ferroelectric thin film with TiN electrodes is explored by introducing an additional non‐ferroelectric La2O3 interfacial layer evaluated at different ...
Furqan Mehmood, Ruben Alcala, Pramoda Vishnumurthy, Bohan Xu, Ridham Sachdeva, Thomas Mikolajick, Uwe Schroeder   +6 more
doaj   +2 more sources

Stress modulation of hafnium-based ferroelectric material orientation in 3D cylindrical capacitor

AIP Advances
Hafnium-based ferroelectric materials have attracted a lot of attention, but the distributions of the materials need to be tuned for commercialization, including phase distribution and polarization orientation distribution.
Wenqi Li, Zhiliang Xia, Meiying Liu, Yong Cheng, Bao Zhang, Yuancheng Yang, Lei Liu, Zongliang Huo   +7 more
doaj   +2 more sources

Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory [PDF]

Advanced Science
HfO2‐based ferroelectric devices have garnered lots of attention in embedded memory due to its exceptional complementary metal oxide semiconductor (CMOS) compatibility as well as sub‐10 nm scalability.
Yinchi Liu, Jiajia Tao, Xiaoyu Dou, Kangli Xu, Yuchun Li, Handong Zhu, Hongliang Lu, Yanxi Li, Chi Liu, Jiezhi Chen, Lin Chen, Shijin Ding, Jixuan Wu, Wenjun Liu   +13 more
doaj   +2 more sources

Polarization current-based reservoir computing utilizing an anti-ferroelectric-like HfZrO2 capacitor

APL Machine Learning
We have experimentally demonstrated the physical reservoir computing by employing the polarization switching current dynamics of an Hf1−xZrxO2 (HZO)-based metal/ferroelectric/metal capacitor with Zr content x = 0, 0.5, and 0.75.
Shin-Yi Min, Eishin Nako, Ryosho Nakane, Mitsuru Takenaka, Kasidit Toprasertpong, Shinichi Takagi   +5 more
doaj   +2 more sources

Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase [PDF]

Nano-Micro Letters
Highlights Ferroelectric-to-nonferroelectric transition occurs in a micron-sized Hf0.5Zr0.5O2 thin-film capacitor with the generation of a giant dielectric permittivity.
Wen Di Zhang, Bing Li, Wei Wei Wang, Xing Ya Wang, Yan Cheng, An Quan Jiang   +5 more
doaj   +2 more sources