Results 11 to 20 of about 3,777 (297)
Electronics (Switzerland), 2021 A metal-ferroelectric-metal (MFM) capacitor was fabricated to investigate the effect of the rate-of-change of temperature in the rapid thermal annealing (RTA) process on the physical properties of the MFM capacitor’s ferroelectric layer [lead zirconate ...
Changhwan Shin, Shin Changhwan
exaly +2 more sources
A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories
Journal of MateriomicsBaTiO3 (BTO) ferroelectric films, which are renowned for their lead-free compositions, superior stability, and absence of a wake-up effect, are promising candidate materials in the field of non-volatile memories.
Xingpeng Liu +8 more
doaj +2 more sources
AIP AdvancesInterfacial differences between the Hf0.5Zr0.5O2 (HZO) and the top/bottom electrodes caused by the process sequence could lead to the imprint effect of the TiN/HZO/TiN ferroelectric capacitor, which leads to serious reliability problems. In this article,
Shihao Yu +6 more
doaj +2 more sources
Theory of Transport in Ferroelectric Capacitors [PDF]
Physical Review Letters, 2021 We present a time-dependent diffusion theory for heat and polarization transport in a planar ferroelectric capacitor with parameters derived from a one-dimensional phonon model. We predict steady-state Seebeck and transient Peltier effects.
Gerrit E. W. Bauer +2 more
openaire +3 more sources
Transparent Ferroelectric Capacitors on Glass [PDF]
Micromachines, 2017 We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO) transparent electrodes with an interdigitated electrode (IDE) design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range ...
Daniele Sette +4 more
openaire +3 more sources
IEEE Journal of the Electron Devices Society, 2020 In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thicknesses ...
Wei-Dong Liu +4 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2022 Si doped HfO2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelectric
R. Alcala +11 more
doaj +1 more source
Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage
Micromachines, 2020 This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following ...
Woo Young Choi
doaj +1 more source
APL Materials, 2021 Polarization fatigue, i.e., the loss of polarization of ferroelectric capacitors upon field cycling, has been widely discussed as an interface related effect. However, mechanism(s) behind the development of fatigue have not been fully identified.
M. T. Do +7 more
doaj +1 more source
Polarization fatigue of organic ferroelectric capacitors [PDF]
Scientific Reports, 2014 AbstractThe polarization of the ferroelectric polymer P(VDF-TrFE) decreases upon prolonged cycling. Understanding of this fatigue behavior is of great technological importance for the implementation of P(VDF-TrFE) in random-access memories. However, the origin of fatigue is still ambiguous.
Zhao, D. +8 more
openaire +3 more sources