Results 41 to 50 of about 3,777 (297)
WHAT CAN WE LEARN ABOUT FERROELECTRICS USING METHODS OF NONLINEAR DYNAMICS?
The nonlinear series resonance circuit with ferroelectric capacitor has been extensively investigated. If the ferroelectric within the capacitor is in its polar phase many of the features well known from model systems of nonlinear dynamics may be ...
M.Diestelhorst
doaj +1 more source
Recovery process of degraded ferroelectric properties in the forming-gas-annealed Pt/Bi4-xLaxTi3O12/Pt capacitor [PDF]
The recovery of ferroelectric properties in the forming-gas-annealed Pt/Bi4-xLaxTi3O12/Pt (Pt/BLT/Pt) capacitor was studied by examining changes in ferroelectric responses, phase evolution, and spatial distributions of relevant species during the ...
Jang, HM, Chon, U
core +1 more source
The ferroelectric field-effect transistor with negative capacitance
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny.
I. Luk’yanchuk +4 more
doaj +1 more source
Development of lead-free thin-film dielectrics for capacitor applications [PDF]
This PhD project aims to develop lead-free thin-film dielectric materials for fixed value, voltage tunable and high-k zipping variable capacitors using growth techniques that can be scaled for silicon batch fabrication.
Darbyshire, David Anthony
core
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Impact of Backend Processing on Integrated Ferroelectric Capacitor Characteristics
Integration of a ferroelectric capacitor module in a standard CMOS process subjects the ferroelectric to various ambients during backend processing, some of which can render the ferroelectric essentially non-operational for NVRAM applications.
A.C. Campbell +4 more
core +1 more source
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon +7 more
wiley +1 more source
Anti-Ferroelectric Ceramics for High Energy Density Capacitors [PDF]
With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing ...
Aditya Chauhan +3 more
openaire +3 more sources
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Propriedades dielétricas de compósitos de PVA:BaTiO3 [PDF]
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia ElétricaAs partículas de titanato de bário foram preparadas utilizando o método de Sol-precipitação.
Pinheiro, Geneviève Kreibich
core

