Results 61 to 70 of about 3,777 (297)

Design Considerations for Sub-1-V 1T1C FeRAM Memory Circuits

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
We present a comprehensive benchmarking framework for one transistor-one capacitor (1T1C) low-voltage ferroelectric random access memory (FeRAM) circuits.
Mohammad Adnaan, Sou-Chi Chang, Hai Li, Yu-Ching Liao, Ian A. Young, Azad Naeemi   +5 more
doaj   +1 more source

Towards the development of a wearable temperature sensor based on a ferroelectric capacitor [PDF]

, 2018
Response of a ferroelectric capacitor to static temperature (~22 to 90°C) is presented. The sensor is based on ferroelectric ceramic lead zirconate titanate (PZT).
Gleskova, Helena, Hannah, Stuart, Stuart Hannah, Helena Gleskova, Slavomir Matuska, Hudec, Robert, Robert Hudec, Matuska, Slavomir   +7 more
core   +1 more source

Cryogenic Characterization of Ferroelectric Nonvolatile Capacitors

IEEE Transactions on Electron Devices
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are susceptible to thermal noise limiting the effective number of bits (ENOB) for the weighted sum.
Madhav Vadlamani, Dyutimoy Chakraborty, Jianwei Jia, Halid Mulaosmanovic, Stefan Duenkel, Sven Beyer, Suman Datta, Shimeng Yu   +7 more
openaire   +2 more sources

A Compact Model of Polycrystalline Ferroelectric Capacitor

IEEE Transactions on Electron Devices, 2021
We present a compact model of polycrystalline ferroelectric (FE) capacitors. The polycrystalline thin-film material is modeled as a collection of independent grains or grain groups. Each grain or grain group is characterized by its local field-dependent switching rate, which is characterized by a distribution function such as Gaussian or type-2 ...
Chien-Ting Tung, Girish Pahwa, Sayeef Salahuddin, Chenming Hu   +3 more
openaire   +2 more sources

Enhancement of Dielectric Breakdown Strength and Recoverable Energy Density in Three‐Dimensional Heterointerfaces on BaTiO3–PbZrO3–PbTiO3 Films via Room‐Temperature Nano‐Clustering

Advanced Functional Materials, EarlyView.
A room‐temperature aerosol deposition process yields multiphase nano‐clustered dielectric capacitors containing discrete BaTiO3, PbZrO3, and PbTiO3 crystals. This architecture creates three‐dimensional heterointerfaces that induce interfacial charge trapping and effectively inhibit breakdown propagation.
Hyunseok Song, Ke Xu, Donggeon Baek, Dayeong Hur, Minjae Kim, Hyun‐Cheol Song, Dae‐Yong Jeong, Houbing Huang, Jungho Ryu   +8 more
wiley   +1 more source

Kinetic control of ferroelectricity in epitaxial barium titanate thin film capacitors [PDF]

APL Electronic Devices
Ferroelectricity is characterized by the presence of spontaneous and switchable macroscopic polarization, and understanding its scaling limits is crucial for fundamental research and technological innovation.
Harish Kumarasubramanian, Prasanna Venkatesan Ravindran, Ting-Ran Liu, Taeyoung Song, Mythili Surendran, Huandong Chen, Pratyush Buragohain, I-Cheng Tung, Arnab Sen Gupta, Rachel Steinhardt, Ian A. Young, Yu-Tsun Shao, Asif Islam Khan, Jayakanth Ravichandran   +13 more
doaj   +1 more source

Improved remnant polarization of Zr-doped HfO2 ferroelectric film by CF4/O2 plasma passivation

Scientific Reports, 2022
In this work, the impact of fluorine (CF4) and oxygen (O2) plasma passivation on HfZrOx (HZO) based ferroelectric capacitor was investigated. By the fluorine passivation, the surface trap density and oxygen vacancies in the HZO-based Metal–ferroelectric ...
Yejoo Choi, Hyeonjung Park, Changwoo Han, Jinhong Min, Changhwan Shin   +4 more
doaj   +1 more source

Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement

, 2023
In this work, we propose a 2TnC ferroelectric random access memory (FeRAM) cell design to realize the quasi- nondestructive readout (QNRO) of ferroelectric polarization (PFE) in a capacitor, which can relax the endurance requirement of the ferroelectric ...
Yi Xiao (15194822), Tzu-Jung Huang (15194884), Zubair Faris (15194859), Yixin Xu (15194867), Kai Ni (15194944), Shan Deng (15194536), Vijaykrishnan Narayanan (15194917), Zijian Zhao (15194858)   +7 more
core   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Pulse Charging of Capacitor Bank by Explosive-Driven Shock Wave Ferroelectric Generator

, 2006
Ultracompact explosive-driven shock wave ferroelectric generators (FEGs) were used as autonomous primary power sources for charging capacitor banks of different capacitance.
Shkuratov, Sergey I., Larry L. Altgilbers, Talantsev, Evgueni F., Sergey I. Shkuratov, Allen H. Stults, Evgueni F. Talantsev, Stults, Allen H., Baird, Jason, Altgilbers, Larry L., Jason Baird   +9 more
core   +1 more source