Results 51 to 60 of about 3,777 (297)
A microprocessor interface for ferroelectric capacitor memory [PDF]
[1992] Conference Record of the Twenty-Sixth Asilomar Conference on Signals, Systems & Computers, 2003 An interface that maps a block of ferroelectric capacitor memory (FECM) into the address space of a microprocessor in such a way that it can write and read the memory as if it were a fully decoded silicon SRAM is described. The circuit has been breadboarded and tested and found to be 100% functional.
Fouts, D. J., Gonter, T. C.
openaire +2 more sources
Advanced Functional Materials, EarlyView.Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo +2 more
wiley +1 more source
Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model
IEEE Journal on Exploratory Solid-State Computational Devices and CircuitsWe present a framework for design technology co-optimization (DTCO) of the main memory system with one transistor-one capacitor (1T1C) ferroelectric random access memory (FERAM) as an alternative to dynamic random access memory (DRAM).
Mohammad Adnaan +6 more
doaj +1 more source
Evaluation of various methods for energy storage calculation in nonlinear capacitors
AIP Advances, 2020 In the practical application of capacitors, especially in pulsed application, recoverable energy is a key parameter, which represents the ability to store energy.
Jiake Xia +8 more
doaj +1 more source
Aging in epitaxial ferroelectric PbTiO3 films [PDF]
Journal of Advanced Dielectrics, 2016 Ability of epitaxial perovskite oxide ferroelectric films to maintain a poled polarization state on a long-term scale is crucial for advanced devices employing such films.
Jari Hannu +4 more
doaj +1 more source
, 2007 It is very important to develop capacitor module technologies such as robust Pb(ZrxTi1-x)O-3 (PZT) film technology at nm scaled PZT thickness and damage minimized ferroelectric capacitor etching technology are crucial for the success of high density one ...
Jung, Dong-Jin +14 more
core +1 more source
Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene
Advanced Functional Materials, EarlyView.Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus +8 more
wiley +1 more source
, 2023 We report a ferroelectric model based on the Jiles-Atherton equations which can successfully reproduce the experimental polarization-voltage hysteresis of thin-film hafnium zirconium oxide (HZO) capacitor devices.
Majumdar, Sayani; id_orcid +2 more
core +1 more source
Advanced Functional Materials, EarlyView.Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies
Advanced Functional Materials, EarlyView.The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley +1 more source