Results 31 to 40 of about 3,777 (297)

The Development of Ferroelectric Capacitor Compact Model

, 2021
The important direction in Low Power research is associated with the usage of ferroelectric materials to obtain the negative differential capacitance.
M.M. Gourary
core   +1 more source

Next Generation Ferroelectric Memories enabled by Hafnium Oxide

, 2022
Ferroelectrics are theoretically an ideal solution for low write power nonvolatile memories. However, the complexity of ferroelectric perovskites has hindered the scaling of such devices to competitive feature sizes.
Mehmood, F., Max, B., Mikolajick, T., Breyer, E. T., Mittmann, T., Hoffmann, M., Slesazeck, S., Lomenzo, P. D., Schroeder, U., Mulaosmanovic, H.   +9 more
core   +1 more source

GaN based negative capacitance heterojunction field-effect transistors with <30 mV/dec subthreshold slope for steep switching operation

Results in Physics, 2020
We demonstrated gallium nitride (GaN) based negative capacitance field-effect transistors (NCFETs) that achieve steep switching operation. Ferroelectric phase characteristics were successfully demonstrated using a 10 nm thick undoped-HfO2 ferroelectric ...
S.-W. Han, S.-K. Eom, M.-J. Kang, H.-S. Kim, K.-S. Seo, H.-Y. Cha   +5 more
doaj   +1 more source

Structure and Electrical Properties of Na_0.5Bi_0.5TiO₃ Epitaxial Films with (110) Orientation

Crystals, 2019
Pt/Na0.5Bi0.5TiO3/La0.5Sr0.5CoO3 (Pt/NBT/LSCO) ferroelectric capacitors were fabricated on (110) SrTiO3 substrate. Both NBT and LSCO films were epitaxially grown on the (110) SrTiO3 substrate.
Jianmin Song, Jie Gao, Suwei Zhang, Laihui Luo, Xiuhong Dai, Lei Zhao, Baoting Liu   +6 more
doaj   +1 more source

Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

IEEE Journal of the Electron Devices Society, 2020
We have fabricated and demonstrated ultrathin In-Ga-Zn-O (IGZO) channel ferroelectric HfO2 field effect transistor (FET) with memory operation. Ultrathin-body IGZO ferroelectric FET (FeFET) shows high mobility and nearly ideal subthreshold slop with ...
Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +6 more
doaj   +1 more source

On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region

IEEE Journal of the Electron Devices Society, 2019
We have investigated the physical mechanism of steep subthreshold slope (SS) in ferroelectric FET (FeFET) based on a dynamic ferroelectric (FE) model without traversing the negative capacitance (NC) region of the S-shaped polarization-voltage predicted ...
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
doaj   +1 more source

Experimental Investigation of Thermal Annealing and Ferroelectric Capacitor Area Effects for Hafnium-Zirconium Oxide Devices

, 2020
In this study, we reveal that the thermal budget of post-metal annealing not only determines the formation of the ferroelectric phase and dipole domain but also the film quality of the gate stack in a metal-ferroelectric-metal capacitor.
Hsiu-Ming Liu, Hsiao-Hsuan Hsu, Sheng Lee   +2 more
core   +1 more source

Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes [PDF]

Nano Letters, 2016
Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain structure reorganization. As the domain evolution in real devices is governed by the distribution of the nucleation centers, obtaining a domain structure of a desired ...
Lu, Haidong, Wang, Bo, Li, Tao, Lipatov, Alexey, Lee, Hyungwoo, Rajapitamahuni, Anil, Xu, Ruijuan, Hong, Xia, Farokhipoor, Saeedeh, Martin, Lane W, Eom, Chang-Beom, Chen, Long-Qing, Sinitskii, Alexander, Gruverman, Alexei   +13 more
openaire   +4 more sources

On the persistence of polar domains in ultrathin ferroelectric capacitors [PDF]

Journal of Physics: Condensed Matter, 2017
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors.
Zubko, P, Lu, H, Bark, C-W, Martí, X, Santiso, J, Eom, C-B, Catalan, G, Gruverman, A   +7 more
openaire   +6 more sources

Double-Layer La: HfO₂ Ferroelectric Capacitors for Multi-Level Memory Applications

IEEE Journal of the Electron Devices Society
A symmetric ferroelectric multi-layer stack, comprising two La:HfO2 ferroelectrics separated by a HfO2 dielectric layer, is proposed to achieve 2-bit (4 states) per cell functionality for non-volatile memory applications.
Chin-Hsiang Liao, Supriya Ghosh, Rishi Raj, Javier Garcia-Barriocanal, K. Andre Mkhoyan, Steven J. Koester   +5 more
doaj   +1 more source