Results 21 to 30 of about 3,777 (297)

Lead-Free BiFeO₃ Thin Film: Ferroelectric and Pyroelectric Properties

Electronic Materials, 2022
The ferroelectric and pyroelectric properties of bismuth ferrite (BFO) epitaxial thin film have been investigated. The ferroelectric epitaxial thin layer has been deposited on strontium titanate (STO) (001) substrate by pulsed laser deposition, in a ...
Mihaela Botea, Cristina Chirila, Georgia Andra Boni, Iuliana Pasuk, Lucian Trupina, Ioana Pintilie, Luminiţa Mirela Hrib, Becherescu Nicu, Lucian Pintilie   +8 more
doaj   +1 more source

Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering

IEEE Journal of the Electron Devices Society, 2022
In this work, we investigate that the capping layer (CL) engineering of aluminum oxide (AlOx) on the dopant-free hafnium oxide (HfOx) and the hafnium zirconium oxide (HfZrOx) ferroelectric metal-ferroelectric-metal (MFM) capacitors. The AlOx CL featuring
Hsuan-Han Chen, Ruo-Yin Liao, Wu-Ching Chou, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Ching-Chien Huang   +5 more
doaj   +1 more source

Impact of the surface roughness on the electrical capacitance [PDF]

, 2006
A new hybrid approach consists to use the advantages of both systems namely the high geometric aspects of the electrodes of the ultracapacitor and the high dielectric strength of polymer materials used in dielectric capacitors.
Flahaut, Emmanuel, Albina, A., Albina, Audrey, Lebey, Thierry, Simon, Patrice, Cambronne, Jean-Pascal, Taberna, Pierre-Louis   +6 more
core   +1 more source

A Compact Model of Nanoscale Ferroelectric Capacitor [PDF]

, 2022
— In this brief, we present a compact model of nanoscale ferroelectric (FE) capacitors. We first use the phase-field simulation to study the polarization switching of very small FE capacitor that contains only a few grains. We show that at higher applied
Salahuddin, Sayeef, Tung, Chien-Ting, Pahwa, Girish, Hu, Chenming   +3 more
core   +1 more source

Ferroelectric Fractional‐Order Capacitors [PDF]

ChemElectroChem, 2017
AbstractPoly(vinylidene fluoride)‐based polymers and their blends are used to fabricate electrostatic fractional‐order capacitors. This simple but effective method allows us to precisely tune the constant phase angle of the resulting fractional‐order capacitor by changing the blend composition.
Agamyrat Agambayev, Shashikant P. Patole, Mohamed Farhat, Ahmed Elwakil, Hakan Bagci, Khaled N. Salama   +5 more
openaire   +2 more sources

Transient Response of Negative Capacitance in P(VDF_0.75-TrFE_0.25) Organic Ferroelectric Capacitor

IEEE Journal of the Electron Devices Society, 2017
The transient response of negative capacitance (NC) in an organic ferroelectric capacitor is experimentally investigated. To observe the transient response of the NC, a simple series network, consisting of an external series resistor and an organic ...
Hansol Ku, Changhwan Shin
doaj   +1 more source

Relaxation Induced by Imprint Phenomena in Low-Temperature (400 C) Processed Hf0.5Zr0.5O2Based Metal-Ferroelectric-Metal Capacitors

, 2022
Ferroelectricity in Hf0.5Zr0.5O2 (HZO) has garnered increasing interest due to its potential applications in neuromorphic and nonvolatile memory devices.
Si Joon Kim (1577869), Dan N. Le, Takashi Onaya (12083989), Yong Chan Jung, Su Min Hwang, Akshay Sahota (10178887), Jaidah Mohan, Akshay Sahota, Dan N. Le (10178884), Heber Hernandez-Arriaga, Jiyoung Kim, Su Min Hwang (5048399), Si Joon Kim, Jiyoung Kim (149493), Jin-Hyun Kim (544199), Jaidah Mohan (6268685), Yong Chan Jung (3944933), Heber Hernandez-Arriaga (12083986), Takashi Onaya, Jin-Hyun Kim   +19 more
core   +1 more source

INFLUENCE OF DISTURBED LAYERS ON THE DIELECTRIC PROPERTIES OF FERROELECTRIC THIN FILM CAPACITORS

Российский технологический журнал, 2016
Capacitor ferroelectric structures are the basis of many modern microelectronic devices, including non-volatile memory, piezoelectric micro-actuators, sensors etc. Miniaturization of such devices requires a reduction in the ferroelectric layer thickness,
P. P. Lavrov
doaj   +1 more source

Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions

2022 IEEE International Integrated Reliability Workshop (IIRW), 2022
Ferroelectric devices are currently considered as a viable option for ultra-low power computing, thanks to their ability to act as memory units and synaptic weights in brain inspired architectures. A common methodology to assess their response in different conditions (especially the role of material composition and charge trapping in ferroelectric ...
Benatti L., Vecchi S., Puglisi F. M.
openaire   +1 more source

Direct Imaging of Nanoscale Ferroelectric Domains and Polarization Reversal in Ferroelectric Capacitors. [PDF]

Nano Lett
Ferroelectric thin films present a powerful platform for next-generation computing and memory applications. However, domain morphology and dynamics in buried ferroelectric stacks have remained underexplored, despite their importance for real device performance.
Hill Landberg MO, Yan B, Chen H, Efe I, Trassin M, Wallentin J.   +5 more
europepmc   +3 more sources