Results 71 to 80 of about 3,777 (297)

Ferroelectricity in ultrathin film capacitors

, 2012
Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related to miniaturization, and a better understanding of what happens as size is reduced is of practical importance for ...
Lichtensteiger, C., Zubko, P., Stengel, M., Aguado-Puente, P., Triscone, J.-M., Ghosez, Philippe, Junquera, J.   +6 more
openaire   +3 more sources

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Approximate Analysis of Cylindrical Ferroelectric Capacitor and Derivation of Drain Current Characteristics in Ferroelectric Gate-All-Around Carbon Nanotube Transistor

, 2011
Drain current vs gate voltage and drain current vs drain voltage characteristics have been derived in a ferroelectric gate-all-around carbon nanotube (CNT) transistor.
Hiroshi Ishiwara, Masakazu Ibata
core   +1 more source

Next-generation ferroelectric memories based on FE-HfO2

, 2022
S.233-236In recent years, and with the discovery of ferroelectricity in hafnium oxide, it was possible to scale down ferroelectric memory cells in both transistor and capacitor configurations.
Müller, Johannes, Müller, S., Mikolajick, T., Flachowsky, S., Slesazeck, S., Polakowski, Patrick   +5 more
core   +1 more source

Polymorph‐Specific Electronic Transduction in WO3 during Molecular Sensing

Advanced Materials, EarlyView.
Metal‐oxide polymorphs with similar surface chemistry can nevertheless exhibit distinct sensing properties. In γ‐ and ε‐WO3, analyte adsorption appears comparable; yet, only ε‐WO3 induces a pronounced lattice electronic perturbation that accommodates charge in sub‐conduction band minimum states.
Matteo D'Andria, Meng Yin, Stefan Neuhauser, Vlasis G. Mavrantzas, Ying Chen, Ken Suzuki, Andreas T. Güntner   +6 more
wiley   +1 more source

Study on Ferroelectric Thin Film Capacitor for AC-Coupled CdTe X-ray Detector [PDF]

, 2019
Access full text - https://doi.org/10.1007/978-3-030-31866-6_131We present that fabricating ferroelectric thin film capacitor on electrodes of the X-ray detector to make AC-coupled CdTe X-ray imager. In order to determine the capacitance required for the
SAKAIDA, K., K. Sakaida, AOKI, T., NAKAGAWA, H., HAYAKAWA, M., M. Hayakawa, T. Aoki, H. Nakagawa   +7 more
core   +1 more source

Self‐Powered Flexible Triboelectric‐Gated Ion‐Gel Transistor for Neuromorphic Tactile Sensing and Human Activity Recognition

Advanced Materials, EarlyView.
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho, Seoyeon Park, Youngmin Lee, Sejoon Lee   +3 more
wiley   +1 more source

Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO₂ Capacitor

IEEE Journal of the Electron Devices Society, 2018
We have experimentally observed the negative-capacitance transient effect in a ferroelectric HfZrO2 (FE-HZO) capacitor and developed an equivalent circuit model based on the Landau- Khalatnikov (LK) theory. By considering multiple domains (MD) and domain
Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi, Toshiro Hiramoto   +3 more
doaj   +1 more source

Nylon 10-12-based ferroelectric capacitor for energy storage

AIP Advances, 2020
The energy storage properties of ferroelectric capacitors of nylon 10-12 were investigated. The energy density and the energy efficiency were determined at a high temperature of 90 °C.
Ayumi Yanaka, Wataru Sakai, Kenji Kinashi, Naoto Tsutsumi   +3 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source