Results 1 to 10 of about 2,144,114 (251)

Interfacial Dipole Modulation Device With SiO_X Switching Species

IEEE Journal of the Electron Devices Society, 2021
In recent years, substantial research efforts have been devoted toward the development of non-volatile memory devices (NVM). In this regard, devices utilizing interfacial dipole modulation (IDM) have been considered.
Giuk Kim, Taeho Kim, Sanghun Jeon
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Effects of Charge Trapping on Memory Characteristics for HfO₂-Based Ferroelectric Field Effect Transistors

Nanomaterials, 2023
A full understanding of the impact of charge trapping on the memory window (MW) of HfO2-based ferroelectric field effect transistors (FeFETs) will permit the design of program and erase protocols, which will guide the application of these devices and ...
Jianjian Wang, Jinshun Bi, Yannan Xu, Gang Niu, Mengxin Liu, Viktor Stempitsky   +5 more
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Stable Resistive Switching in ZnO/PVA:MoS₂ Bilayer Memristor

Nanomaterials, 2022
Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their ...
Tangyou Sun, Hui Shi, Shuai Gao, Zhiping Zhou, Zhiqiang Yu, Wenjing Guo, Haiou Li, Fabi Zhang, Zhimou Xu, Xiaowen Zhang   +9 more
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Structural and electrical properties of ferroelectric BiFeO3/HfO2 gate stack for nonvolatile memory applications [PDF]

Journal of Advanced Dielectrics, 2018
Difficulties in the fabrication of direct interface of ferroelectric BiFeO3 on the gate of ferroelectric field effect transistor (FeFET) is well known.
Nitish Yadav, Kamal Prakash Pandey, Pramod Narayan Tripathi   +2 more
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Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window

IEEE Journal of the Electron Devices Society, 2022
The transparent floating gate memory based on zinc oxide (ZnO) thin film transistors (TFTs) was fabricated by using one-step atom layer deposition of aluminia tunneling and ZnO charge-trap layers.
Ning Zhang, Wanpeng Zhao, Xinyu Zhang, Yang Liu, Shurong Dong, Jikui Luo, Zhi Ye   +6 more
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Preparation of Remote Plasma Atomic Layer-Deposited HfO₂ Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices

Nanomaterials, 2023
Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the ...
Jae-Hoon Yoo, Won-Ji Park, So-Won Kim, Ga-Ram Lee, Jong-Hwan Kim, Joung-Ho Lee, Sae-Hoon Uhm, Hee-Chul Lee   +7 more
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The eyes are a window into memory

Current Opinion in Behavioral Sciences, 2020
The oculomotor system may be a natural and unique effector system to reveal the development and expression of memory due to its shared evolutionary history with the hippocampus that has resulted in an extensive set of structural and functional connections between the systems.
Jennifer D Ryan, Kelly Shen
openaire   +1 more source

The effects of viewing by scrolling on a small screen on the encoding of objects into visual long-term memory

Frontiers in Psychology, 2023
The perception of an image obtained by scrolling through a small screen can differ from the typical perception of a wide visual field in a stable environment.
Hayato Sho, Hiromi Morita
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Sleep as a window to target traumatic memories

Neuroscience & Biobehavioral Reviews, 2022
Post-traumatic stress disorder (PTSD) is a severe psychiatric disorder in which traumatic memories result in flashbacks and nightmares. With one-third of patients not responding to standard exposure-based psychotherapy, new treatment strategies are needed. Sleep offers a unique time window to enhance therapeutic efficacy.
van der Heijden, A.C., van den Heuvel, O.A., van der Werf, Y.D., Talamini, L.M., van Marle, H.J.F.   +4 more
openaire   +5 more sources

Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges

Scientific Reports, 2021
In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide.
Yejin Yang, Young-Soo Park, Jaemin Son, Kyoungah Cho, Sangsig Kim   +4 more
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